Abstract: A light emitting apparatus according to the present disclosure includes a first layer made of a semiconductor monocrystal, a second layer provided at the first layer and having a crystal orientation not continuous with the crystal orientation of the first layer, and a columnar crystal structure including a light emitting layer and extending from the second layer.

Abstract: Provided is a display device containing quantum dots. A display device includes a display area. The display area has a light emitting device in which a first electrode, a layer between the first electrode and an emitting layer, the emitting layer, a layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. A thin film transistor connected to the light emitting device is preferably an n-ch TFT.

Abstract: A quantum dot (QD) dispersion solution includes QD phosphor particles, ligands, and a solvent. Each ligand includes a thiol group and at least one functional group of ester groups and ether groups. The solvent is propylene glycol monomethyl ether acetate.

Abstract: Provided is a display device containing quantum dots. A display device includes a display area. The display area has a light emitting device in which a first electrode, a layer between the first electrode and an emitting layer, the emitting layer, a layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. A thin film transistor connected to the light emitting device is preferably an n-ch TFT.

Abstract: The electroluminescent element includes an anode electrode, a cathode electrode, and a quantum dot (QD) layer including quantum dots and arranged between the anode electrode and the cathode electrode. The quantum dots are Cd-free quantum dots that include at least Zn and Se, and do not include Cd at a mass ratio of 1/30 or greater in relation to Zn. The particle size of each quantum dot is within a range from 3 nm to 20 nm.

Abstract: The electroluminescent element includes a QD layer and an electron transport layers. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The QD layer contains a surface modifier that protects surfaces of the quantum dots, and a weight ratio of the surface modifier to the QD phosphor particles is 0.115 and more and 0.207 or less.

Abstract: The electroluminescent element includes a QD layer and an electron transport layer. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The electron transport layer contains zinc oxide. A film thickness of the electron transport layer is 15 nm or more and 85 nm or less.

Abstract: The electroluminescent element includes a QD layer and a hole transport layer. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The hole transport layer includes poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4?-(N-(4-sec-butylphenyl)diphenylamine)]. A film thickness of the hole transport layer is 10 nm or more and 57 nm or less.

Abstract: The electroluminescent element includes a QD layer. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The film thickness of the QD layer is 12 nm or more and 49 nm or less.

Abstract: Provided is a display device containing quantum dots. A display device includes a display area. The display area has a light emitting device in which a first electrode, a layer between the first electrode and an emitting layer, the emitting layer, a layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. A thin film transistor connected to the light emitting device is preferably an n-ch TFT.

Abstract: An object is to provide an infrared sensor with a quantum dot optimized. The present invention provides an infrared sensor (1) including a light absorption layer (5) that absorbs an infrared ray, wherein the light absorption layer includes a plurality of spherical quantum dots (21). Alternatively, the present invention provides an infrared sensor including a light absorption layer that absorbs an infrared ray, wherein the light absorption layer includes a plurality of quantum dots and the quantum dot includes at least one kind of PbS, PbSe, CdHgTe, Ag2S, Ag2Se, Ag2Te, AgInSe2, AgInTe2, CuInSe2, CuInTe2, and InAs.

Abstract: Provided is a display device containing quantum dots. A display device includes a display area. The display area has a light emitting device in which a first electrode, a layer between the first electrode and an emitting layer, the emitting layer, a layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a bottom emission device. All the layers from the first electrode to the second electrode are preferably each formed of the inorganic layer.

Abstract: Provided is a light emitting device and an illumination device that include quantum dots. A light emitting device includes an anode, a hole transport layer, an emitting layer, an electron transport layer, and a cathode. The light emitting layer is formed of an inorganic layer containing quantum dots. All the layers from the anode to the cathode are preferably each formed of the inorganic layer. The hole transport layer, the emitting layer, and the electron transport layer are preferably each constituted by the inorganic layer formed from nanoparticles.

Abstract: It is an object of the present invention to provide a wavelength conversion member capable of appropriately performing color conversion compared to the prior arts and a light-emitting apparatus, a light-emitting element, a light source apparatus, and a display apparatus using the wavelength conversion member. A wavelength conversion member of the present invention includes a light incident surface, a light emission surface and a side face that connects between the light incident surface and the light emission surface, and includes a container provided with a storage space inside the side face, a wavelength conversion substance that fills the inside of the storage space and a colored layer formed on the side face.

Abstract: To provide a quantum dot-containing member, a sheet member, a backlight device, and a display device containing quantum dots capable of effectively suppressing a temporal change of a light emission intensity, particularly, without providing a barrier layer, a sheet member (1) containing quantum dots of the invention is a sheet member obtained by dispersing quantum dots in resin, and the resin contains the following general formula (1) and general formula (2). where “R1” and “R2” refer to H or CnHm (where “n” and “m” denote integers).

Abstract: To provide a wavelength converting member in which the occurrence of blackening can be suppressed compared to the prior art; and a light emitting device, a light emitting element, a light source unit, and a display device using the wavelength converting member. The wavelength converting member includes: a receptacle including a light entrance plane and a light exit plane opposite to the light entrance plane and provided with a receiving space inside the light entrance plane and the light exit plane; and a wavelength conversion layer having quantum dots that is placed in the receiving space. The distance between the light entrance plane and the wavelength conversion layer is longer than the distance between the light exit plane and the wavelength conversion layer.

Abstract: To provide a wavelength converting member in which the occurrence of blackening can be suppressed compared to the prior art; and a light emitting device, a light emitting element, a light source unit, and a display device using the wavelength converting member. The wavelength converting member includes: a receptacle including a light entrance plane and a light exit plane opposite to the light entrance plane and provided with a receiving space inside the light entrance plane and the light exit plane; and a wavelength conversion layer having quantum dots that is placed in the receiving space. The distance between the light entrance plane and the wavelength conversion layer is longer than the distance between the light exit plane and the wavelength conversion layer.

Abstract: It is an object of the present invention to provide a wavelength conversion member capable of appropriately performing color conversion compared to the prior arts and a light-emitting apparatus, a light-emitting element, a light source apparatus, and a display apparatus using the wavelength conversion member. A wavelength conversion member of the present invention includes a light incident surface, a light emission surface and a side face that connects between the light incident surface and the light emission surface, and includes a container provided with a storage space inside the side face, a wavelength conversion substance that fills the inside of the storage space and a colored layer formed on the side face.

Abstract: The invention provides a laminate-type piezoelectric element comprising a ceramic laminate 10 with ceramic layers 11 and internal electrode layers 12 respectively stacked alternately, and a pair of external electrodes respectively connecting with a pair of connecting areas 15 formed at an outer peripheral area of the ceramic laminate 10. The internal electrode layer comprises an internal electrode part 120 with electric conductivity, and a non-pole part 120 where the internal electrode part 120 does not exist at the inside near an outer peripheral area. The ceramic laminate 10 comprises stress relaxation parts 13 able to modify more easily their shapes than the ceramic layers 11, along at least a part of said internal electrode layers. This stress relaxation part 13 is placed so as to overlap with the non-pole part 129 of either of the internal electrode layers 12, in a stacking direction of the ceramic laminate 10.

Abstract: The invention provides a laminate-type piezoelectric element comprising a ceramic laminate 10 with ceramic layers 11 and internal electrode layers 12 respectively stacked alternately, and a pair of external electrodes respectively connecting with a pair of connecting areas 15 formed at an outer peripheral area of the ceramic laminate 10. The internal electrode layer comprises an internal electrode part 120 with electric conductivity, and a non-pole part 120 where the internal electrode part 120 does not exist at the inside near an outer peripheral area. The ceramic laminate 10 comprises stress relaxation parts 13 able to modify more easily their shapes than the ceramic layers 11, along at least a part of said internal electrode layers. This stress relaxation part 13 is placed so as to overlap with the non-pole part 129 of either of the internal electrode layers 12, in a stacking direction of the ceramic laminate 10.