Abstract: An object is to provide quantum dots that enable obtaining a sheet with a quantum dot layer thickness of 50 ?m or less and good aging durability against degradation from the sheet edges, a quantum dot-containing sheet using the quantum dots, and a backlight device or a display device. Quantum dots of the present disclosure do not include RoHS-regulated substances and have a higher absorption coefficient at 450 nm than InP. In the present disclosure, the quantum dots preferably includes a core formed from an I-III-VI chalcopyrite system. It is preferable that Group I includes at least one of Ag and Cu, Group III includes at least one of Ga and In, and Group VI includes at least one of S, Se and Te. A quantum dot-containing sheet formed by curing a quantum dot-containing composition including the quantum dots of the present disclosure, wherein the quantum dot-containing sheet has a quantum dot layer thickness of 50 ?m or less. It is preferable that degradation from the edges of the sheet is 500 ?m or less.

Abstract: An infrared sensor is provided that is capable of selecting a preferred combination of materials for an electron transport layer and a hole transport layer, and a method for producing the infrared sensor. An infrared sensor includes an electron transport layer, a light absorption layer and a hole transport layer. The light absorption layer contains quantum dots, the electron transport layer contains at least one metal oxide selected from ZnO, MgZnO, SnO2 and SnO, and the hole transport layer contains at least one metal oxide selected from NiO and MOO. Oxidation deficiency in the metal oxide constituting the electron transport layer and the hole transport layer is smaller than that in a bulk material.

Abstract: Quantum dots each having a core-shell structure which can be realized to have Type I structure in a ZnTe core. The quantum dots are cadmium-free core-shall structured quantum dots, in which the core contains Zn and Te and the shell contains Mg and S. The quantum dots may be structured with (a core containing Zn and Te)/MgS, (a core containing Zn and Te)/MgS, (a core containing Zn and Te)/ZnMgS/MgS, (a core containing Zn and Te)/MgS/ZnS, (a core containing Zn and Te)/ZnMgS/MgS/ZnS, (a core containing Zn and Te)/MgS/ZnO, or (a core containing Zn and Te)/ZnMgS/MgS/ZnO.

Abstract: Provided is a display device containing quantum dots. A display device includes a display area. The display area includes a light emitting device in which a first electrode, a first layer between the first electrode and an emitting layer, the emitting layer, a second layer between the emitting layer and a second electrode, and the second electrode are stacked in that order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. An electron transport layer or an electron injection layer is provided in the first layer between the first electrode and the emitting layer, or in the second layer between the emitting layer and the second electrode. The electron transport layer or the electron injection layer comprises SnO.

Abstract: Provided is a display device containing quantum dots. A display device includes a display area. The display area has a light emitting device in which a first electrode, a layer between the first electrode and an emitting layer, the emitting layer, a layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. A thin film transistor connected to the light emitting device is preferably an n-ch TFT.

Abstract: An infrared sensor is provided, which includes a light absorption layer that absorbs an infrared ray. The light absorption layer includes quantum dots. The quantum dots include at least one kind of PbS, PbSe, CdHgTe, Ag2S, Ag2Se, Ag2Te, AgInSe2, AgInTe2, CuInSe2, CuInTe2, and InAs. Moreover, the light absorption layer includes a quantum dot layer divided into at least two regions, including the quantum dots and having mutually different absorption edge wavelengths, out of a wavelength region from a near-infrared region to a far-infrared region.

Abstract: An object is to provide an infrared sensor with a quantum dot optimized. The present invention provides an infrared sensor (1) including a light absorption layer (5) that absorbs an infrared ray, wherein the light absorption layer includes a plurality of spherical quantum dots (21). Alternatively, the present invention provides an infrared sensor including a light absorption layer that absorbs an infrared ray, wherein the light absorption layer includes a plurality of quantum dots and the quantum dot includes at least one kind of PbS, PbSe, CdHgTe, Ag2S, Ag2Se, Ag2Te, AgInSe2, AgInTe2, CuInSe2, CuInTe2, and InAs.

Abstract: A QD is a Cd-free quantum dot including a core and a shell and configured to emit blue light. The core at least contains Zn and Se. The shell has a film thickness in a range from 0.5 nm to 3 nm, contains Zn, Se, and S in a boundary portion adjacent to the core, and contains Zn and S in an outermost portion.

Abstract: Provided is a display device containing quantum dots. A display device includes a display area. The display area has a light emitting device in which a first electrode, a layer between the first electrode and an emitting layer, the emitting layer, a layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. A thin film transistor connected to the light emitting device is preferably an n-ch TFT.

Abstract: A quantum dot includes a core including Zn and Se, and a shell composed of ZnS and provided on a surface of the core, adjacently to the core. The quantum dot-emits blue light, is Cd free, and has a particle diameter within a range from 3 nm to 20 nm and a fluorescence lifetime in a thin film state of 50 ns or less.

Abstract: Provided is a display device containing quantum dots. A display device includes a display area. The display area has a light emitting device in which a first electrode, a layer between the first electrode and an emitting layer, the emitting layer, a layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. A thin film transistor connected to the light emitting device is preferably an n-ch TFT.

Abstract: Provided is a display device containing quantum dots. A display device includes a display area. The display area has a light emitting device in which a first electrode, a layer between the first electrode and an emitting layer, the emitting layer, a layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. A thin film transistor connected to the light emitting device is preferably an n-ch TFT.

Abstract: A quantum dot (QD) dispersion solution includes QD phosphor particles, ligands, and a solvent. Each ligand includes a thiol group and at least one functional group of ester groups and ether groups. The solvent is propylene glycol monomethyl ether acetate.

Abstract: Provided is a display device containing quantum dots. A display device includes a display area. The display area has a light emitting device in which a first electrode, a layer between the first electrode and an emitting layer, the emitting layer, a layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. A thin film transistor connected to the light emitting device is preferably an n-ch TFT.

Abstract: The electroluminescent element includes an anode electrode, a cathode electrode, and a quantum dot (QD) layer including quantum dots and arranged between the anode electrode and the cathode electrode. The quantum dots are Cd-free quantum dots that include at least Zn and Se, and do not include Cd at a mass ratio of 1/30 or greater in relation to Zn. The particle size of each quantum dot is within a range from 3 nm to 20 nm.

Abstract: The electroluminescent element includes a QD layer. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The film thickness of the QD layer is 12 nm or more and 49 nm or less.

Abstract: The electroluminescent element includes a QD layer and a hole transport layer. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The hole transport layer includes poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4?-(N-(4-sec-butylphenyl)diphenylamine)]. A film thickness of the hole transport layer is 10 nm or more and 57 nm or less.

Abstract: The electroluminescent element includes a QD layer and an electron transport layer. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The electron transport layer contains zinc oxide. A film thickness of the electron transport layer is 15 nm or more and 85 nm or less.

Abstract: The electroluminescent element includes a QD layer and an electron transport layers. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The QD layer contains a surface modifier that protects surfaces of the quantum dots, and a weight ratio of the surface modifier to the QD phosphor particles is 0.115 and more and 0.207 or less.

Abstract: Provided is a display device containing quantum dots. A display device includes a display area. The display area has a light emitting device in which a first electrode, a layer between the first electrode and an emitting layer, the emitting layer, a layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. A thin film transistor connected to the light emitting device is preferably an n-ch TFT.