Abstract: A controlling device includes: controlling sections configured to control respective of a plurality of devices; and a master controlling section configured to determine, by referring to information obtained from one of the plurality of devices, a control matter concerning another one of the plurality of devices.

Abstract: A controlling device includes: controlling sections configured to control respective of a plurality of devices; and a master controlling section configured to determine, by referring to information obtained from one of the plurality of devices, a control matter concerning another one of the plurality of devices.

Abstract: In a solid imaging device, a photoelectric converting section is configured to generate electric charges through photoelectric conversion, and a first charge transfer section is connected with the photoelectric converting section. A first read gate section is provided between the photoelectric converting section and the first charge transfer section, and is configured to transfer the electric charges from the photoelectric converting section to the first charge transfer section. A second charge transfer section operates independently from the first charge transfer section and configured to receive the electric charges transferred from the first charge transfer section.

Abstract: In a solid imaging device, a photoelectric converting section is configured to generate electric charges through photoelectric conversion, and a first charge transfer section is connected with the photoelectric converting section. A first read gate section is provided between the photoelectric converting section and the first charge transfer section, and is configured to transfer the electric charges from the photoelectric converting section to the first charge transfer section. A second charge transfer section operates independently from the first charge transfer section and configured to receive the electric charges transferred from the first charge transfer section.

Abstract: A color linear image sensor device has a shutter function for selectively draining charges stored in a photodetector circuit. The color linear image sensor device includes first, second, and third linear image sensors having different sensitivities with respect to incident light and arranged successively in sensitivity decreasing order from the outermost, and a shutter gate and a shutter drain for adjusting an amount of exposure to the linear image sensor which has the highest sensitivity to incident light.

Abstract: Disclosed is a color linear image sensor having a small line-to-line distance, which comprises signal charge storage sections adjacent to light receiving sections. Signal charges are read by signal charge reading sections from the signal charge storage sections to signal charge transfer sections, and thereby residual images are prevented from being generated. Each of the signal charge reading sections is electrically connected with a portion of the signal charge transfer section which is adjacent to the signal charge reading section, and driving pulses are made common (&phgr;1 (TG)). Alternatively, each of the signal charge storage sections is electrically connected with a portion of the signal charge transfer section which is not adjacent to the signal charge reading section, and driving pulses are made common ((&phgr;2 (ST)). Accordingly, the number of wiring lines (pulse lines) arranged between the light receiving sections of respective colors is reduced by one.

Abstract: An electric charge detector includes an N-type semiconductor substrate 10 and a P-type well region 9 formed on the semiconductor substrate 10. An N-type well region 2 is formed on the P-type well region 9. A potential-change detection means is connected to the N-type well region 2 to detect a variation in surface potential of the N-type well region 2. The P-type diffused layer 11 is formed on a surface of the N-type well region 2.

Abstract: A solid state image pickup device with built-in signal amplifier produces an image signal from an output potential signal produced from each charge packet by a charge converting unit, and the built-in signal amplifier includes a sampling-and-hold circuit connected between the charge converting unit and a signal amplifying circuit for changing a potential signal from a reset field-through potential level to a signal potential level, thereby eliminating a reset field-through noise from an input potential signal supplied to the signal amplifier.

Abstract: The object of the present invention is to reduce the line distance between light receiving elements for three colors of RGB of a color linear image sensor to reduce the required storage capacity for an external memory. The color linear image sensor is constructed such that a charge transfer element is disposed between each two adjacent light receiving elements of three rows and a charge read-out element is disposed between each charge transfer element and each of the light receiving elements on the opposite sides of the charge transfer element such that, when signal charges from the light receiving elements for different colors are to be transferred, each of the character transfer elements is used commonly and time divisionally by the centrally located light receiving elements and the light receiving elements on each of the opposite sides of the centrally located light receiving elements.

Abstract: A a color linear image sensor which has: a semiconductor substrate on which the color linear image sensor is formed; three lines of photocells provided on the semiconductor substrate; signal charge transfer units disposed adjacent to the respective photocells; and signal charge reading units through which a signal charge in each of the photocells is read out into the signal charge transfer units adjacent to the each of the photocells; wherein the signal charge transfer units which are formed as single-line CCD registers, respectively corresponding to both side photocells of the three lines of photocells are located not to exist between the photocells, and the signal charge transfer units which are formed as CCD registers corresponding to a central photocell of the three lines of photocells are located on both sides of the central photocell.

Abstract: A charge detecting device comprises a floating diode for accumulating a signal charge, a source-follower amplifier for detecting a variation in a surface potential of the floating diode, a reset transistor, a transistor having a same size to the reset transistor for detecting a channel potential of the reset transistor and a reset pulse supplying means including an inverting amplifier, in which the channel potential of the reset transistor detected by the transistor is amplified and is added with a binary digit pulse inputted through an AC coupled capacitor to be made into a reset pulse which is applied to a gate electrode of the reset transistor. This allows automatic setting of each level of the suitable reset pulse in response to a variation in the channel potential of the reset transistor without any external circuits for setting reset pulse levels.