Abstract: A memory device includes first to third electrode layers and first to third columnar bodies. The first electrode layers are stacked above a foundation layer. The second and third electrode layers are arranged above the first electrode layers in a direction crossing a stacking direction of the first electrode layers. The first columnar body extends through the first and second electrode layers. The second columnar body extends through the first and third electrode layers. The third columnar body extends through the first electrode layers, and is positioned between the second electrode layer and the third electrode layer. The first to third columnar bodies include first to third semiconductor layers, respectively. The first and second semiconductor layers are electrically connected to the foundation layer, and the third semiconductor layer is electrically insulated from the foundation layer by an insulating film provided between the foundation layer and the third semiconductor layer.

Abstract: A memory device includes first to third electrode layers and first to third columnar bodies. The first electrode layers are stacked above a foundation layer. The second and third electrode layers are arranged above the first electrode layers in a direction crossing a stacking direction of the first electrode layers. The first columnar body extends through the first and second electrode layers. The second columnar body extends through the first and third electrode layers. The third columnar body extends through the first electrode layers, and is positioned between the second electrode layer and the third electrode layer. The first to third columnar bodies include first to third semiconductor layers, respectively. The first and second semiconductor layers are electrically connected to the foundation layer, and the third semiconductor layer is electrically insulated from the foundation layer by an insulating film provided between the foundation layer and the third semiconductor layer.

Abstract: According to one embodiment, a non-volatile memory device includes: first memory cell regions including first wirings extending in a first direction, second wirings extending in a second direction crossing the first direction, and first memory cells provided between the first wirings and the second wirings and being capable of changing resistance state; and second memory cell regions including third wirings extending in the first direction, fourth wirings extending in the second direction crossing the first direction, and second memory cells provided between the third wirings and the fourth wirings and being capable of changing resistance state, the second memory cell region having a smaller area than the first memory cell region in top view.

Abstract: According to one embodiment, a non-volatile memory device includes: first memory cell regions including first wirings extending in a first direction, second wirings extending in a second direction crossing the first direction, and first memory cells provided between the first wirings and the second wirings and being capable of changing resistance state; and second memory cell regions including third wirings extending in the first direction, fourth wirings extending in the second direction crossing the first direction, and second memory cells provided between the third wirings and the fourth wirings and being capable of changing resistance state, the second memory cell region having a smaller area than the first memory cell region in top view.

Abstract: A nonvolatile semiconductor memory device includes: a memory cell array which has a plurality of first lines, a plurality of second lines intersecting the plurality of first lines and a plurality of memory cells which store an electrically rewritable resistance value as data in a non-volatile manner; a first decoder which is connected to one ends of the plurality of first lines and selects the first lines; a second decoder which is connected to the plurality of second lines and selects the second lines; and a voltage applying circuit which is connected to one of the first and second decoders and which applies a predetermined voltage between the first and second lines selected by the first and second decoders. The second decoder sequentially selects the second lines in a direction from the other ends to the one ends of the first lines.

Abstract: A nonvolatile semiconductor memory device according to an embodiment herein includes a memory cell array. The memory cell array includes memory cells each provided between a first line and a second line and each including a variable resistor. A control circuit applies through the first and second lines a voltage necessary for a forming operation of the memory cell. A current limiting circuit limits a value of a current flowing across the memory cell during the forming operation to a certain limit value. The control circuit repeats an operation of applying the voltage by setting the limit value to a certain value and an operation of changing the limit value from the certain value, until forming of the memory cell is achieved.

Abstract: A nonvolatile semiconductor memory device includes: a memory cell array which has a plurality of first lines, a plurality of second lines intersecting the plurality of first lines and a plurality of memory cells which store an electrically rewritable resistance value as data in a non-volatile manner; a first decoder which is connected to one ends of the plurality of first lines and selects the first lines; a second decoder which is connected to the plurality of second lines and selects the second lines; and a voltage applying circuit which is connected to one of the first and second decoders and which applies a predetermined voltage between the first and second lines selected by the first and second decoders. The second decoder sequentially selects the second lines in a direction from the other ends to the one ends of the first lines.

Abstract: According to one embodiment, a nonvolatile memory device including a nonvolatile memory layer is provided. The nonvolatile memory layer is formed of a metal oxide film that includes an element with a higher electronegativity compared with a metal element forming the metal oxide film in the metal oxide film at a concentration of 25 at % or less.

Abstract: According to one embodiment, a nonvolatile memory device is provided, which includes a nonvolatile memory element in which an anode, a nonvolatile memory layer formed of a metal oxide film, and a cathode are stacked. The anode is formed of a metal nitride material and includes nitrogen more than a stoichiometric ratio of the metal nitride material. The cathode is formed of a metal material.

Abstract: A nonvolatile semiconductor memory device according to an embodiment herein includes a memory cell array. The memory cell array includes memory cells each provided between a first line and a second line and each including a variable resistor. A control circuit applies through the first and second lines a voltage necessary for a forming operation of the memory cell. A current limiting circuit limits a value of a current flowing across the memory cell during the forming operation to a certain limit value. The control circuit repeats an operation of applying the voltage by setting the limit value to a certain value and an operation of changing the limit value from the certain value, until forming of the memory cell is achieved.

Abstract: A thermal image transfer recording method includes the steps of holding a thermal image transfer recording medium including a support material and a thermal image transfer layer provided on the support material, and an image recording material between a line edge thermal head and a platen roller, with a contact pressure being applied therebetween; transferring the thermal image transfer recording layer imagewise from the thermal image transfer recording medium to the image recording material with imagewise application of heat by use of the line edge thermal head; and taking up the thermal image transfer recording medium after the image transfer, with the take-up tension applied to the thermal image transfer recording medium being set larger than both the shearing strength and peeling strength at 70.degree. C. of the thermal image transfer layer. A thermal image transfer recording medium including a thermal image transfer layer with a shearing strength of 200 g/cm or more at 25.degree. C.

Abstract: A thermal image transfer recording sodium includes a support and a thermal image transfer ink layer formed on the support. The thermal image transfer ink layer contains a coloring agent, a resin with a melting point of 120.degree. C. or more and an SP value of 10.5 to 12.5, and a melt viscosity lowering material for lowering the melt viscosity of the resin, with the compatibility of the resin and the malt viscosity lowering material, measured by a transparency measurement method, being 0.20 or less, or with the melt viscosity at 150.degree. C. of the thermal image transfer ink layer being in the range of 1.times.10.sup.2 to 5.times.10.sup.6 poise.

Abstract: A thermal image transfer recording method includes the steps of holding a thermal image transfer recording medium including a support material and a thermal image transfer layer provided on the support material, and an image recording material between a line edge thermal head and a platen roller, with a contact pressure being applied therebetween; transferring the thermal image transfer recording layer imagewise from the thermal image transfer recording medium to the image recording material with imagewise application of heat by use of the line edge thermal head; and taking up the-thermal image transfer recording medium after the image transfer, with the take-up tension applied to the thermal image transfer recording medium being set larger than both the shearing strength and peeling strength at 70.degree. C. of the thermal image transfer layer. A thermal image transfer recording medium including a thermal image transfer layer with a shearing strength of 200 g/cm or more at 25.degree. C.

Abstract: A thermal image transfer recording method includes the steps of holding a thermal image transfer recording medium including a support material and a thermal image transfer layer provided on the support material, and an image recording material between a line edge thermal head and a platen roller, with a contact pressure being applied therebetween; transferring the thermal image transfer recording layer imagewise from the thermal image transfer recording medium to the image recording material with imagewise application of heat by use of the line edge thermal head; and taking up the thermal image transfer recording medium after the image transfer, with the take-up tension applied to the thermal image transfer recording medium being set larger than both the shearing strength and peeling strength at 70.degree. C. of the thermal image transfer layer. A thermal image transfer recording medium including a thermal image transfer layer with a shearing strength of 200 g/cm or more at 25.degree. C.

Abstract: A thermal image transfer recording medium includes a support and a thermal image transfer ink layer formed on the support. The thermal image transfer ink layer contains a coloring agent, a resin with a melting point of 120.degree. C. or more and an SP value of 10.5 to 12.5, and a melt viscosity lowering material for lowering the melt viscosity of the resin, with the compatibility of the resin and the melt viscosity lowering material, measured by a transparency measurement method, being 0.20 or less, or with the melt viscosity at 150.degree. C. of the thermal image transfer ink layer being in the range of 1.times.10.sup.2 to 5.times.10.sup.6 poise.

Abstract: A thermal image transfer recording medium is composed of a support, and a thermofusible ink layer formed on the support, the thermofusible ink layer containing a thermofusible material with a loaded needle penetration of 2 or less at 25.degree. C., and a coloring agent, and having a shearing strength of 8 to 20 gf/cm at 20.degree. C., and an adhesion strength of 1.0 to 2.0 gf/cm with respect to the support. The thermofusible ink layer can be composed of a first ink layer formed thereon, comprising finely-divided particles of a thermofusible material with a loaded needle penetration of 2 or less at 25.degree. C. and an average particle diameter in the range of 0.5 to 3.0 .mu.m, with a voidage of 5 to 30 vol. %, and a second ink layer formed on the first ink layer, composed of a thermofusible material with a loaded needle penetration of 2 or less at 25.degree. C., which may be in the form of finely-divided particles, and a coloring agent.

Abstract: A thermal image transfer recording medium is disclosed, which comprises a substrate and an ink layer formed thereon comprising as the main components (i) a coloring agent and (ii) a copolymer consisting of at least a monomer selected from Group A consisting of acrylonitrile and methacrylonitrile and at least a monomer selected from Group B consisting of monomers represented by the following formula (I); ##STR1## wherein R.sup.1 represents hydrogen or a methyl group; and R.sup.2 represents hydrogen, a straight-chain or branched alkyl group having 1 to 4 carbon atoms, a glycidyl group, or a hydroxyalkyl group having 2 to 4 carbon atoms.

Abstract: A thermal image transfer recording medium is disclosed, which comprises a substrate and an ink layer formed thereon comprising as the main components (i) a coloring agent and (ii) a copolymer consisting of at least a monomer selected from Group A consisting of acrylonitrile and methacrylonitrile and at least a monomer selected from Group B consisting of monomers represented by the following formula (I); ##STR1## wherein R.sup.1 represents hydrogen or a methyl group; and R.sup.2 represents hydrogen, a straight-chain or branched alkyl group having 1 to 4 carbon atoms, a glycidyl group, or a hydroxyalkyl group having 2 to 4 carbon atoms.

Abstract: A thermal image transfer recording medium is composed of a support and a thermofusible ink layer formed on the support, with the water-content ratio of the recording medium excluding the support being in the range of 0.3 to 4.0 wt. % of the total weight of the recording medium excluding the support.

Abstract: A thermal image transfer recording medium is composed of a support and a thermofusible ink layer formed thereon, and the thermofusible ink layer contains as the main components a coloring agent, a wax component and a rubber elastomer component which is discontinuously dispersed in the form of layers in the thermofusible ink layer, or is composed of a first ink layer containing a wax component and a rubber elastomer and a second ink layer containing a coloring agent, a wax component and a binder resin, which is overlaid on the first ink layer.