Abstract: A semiconductor device and a method of generating a power-on reset signal are provided. The semiconductor device includes a regulator configured to generate a regulated power supply voltage having a lower voltage value than a power supply voltage based on the power supply voltage and output the regulated power supply voltage to an internal power supply line, and a power-on reset circuit configured to generate a signal which has a first level at which reset is prompted immediately after power for the power supply voltage is turned on and which transitions to a second level at which reset release is prompted from the first level when a voltage value of the internal power supply line has risen as a power-on reset signal.

Abstract: A semiconductor device and a method of generating a power-on reset signal are provided. The semiconductor device includes a regulator configured to generate a regulated power supply voltage having a lower voltage value than a power supply voltage based on the power supply voltage and output the regulated power supply voltage to an internal power supply line, and a power-on reset circuit configured to generate a signal which has a first level at which reset is prompted immediately after power for the power supply voltage is turned on and which transitions to a second level at which reset release is prompted from the first level when a voltage value of the internal power supply line has risen as a power-on reset signal.

Abstract: A folded cascode differential amplifier includes a high-voltage input stage and a low-voltage output stage. The input stage is formed from high-voltage MOS transistors, two of which constitute a differential pair. The output stage is formed from low-voltage MOS transistors, some of which constitute a current mirror circuit connected to the differential pair. The output stage also includes at least one transistor that amplifies a voltage produced in the current mirror circuit to generate an output voltage signal. The high-voltage MOS transistors have higher breakdown voltages than the low-voltage MOS transistors. Incorporation of both types of transistors into a single amplifier reduces the necessary number of transistors and the necessary number of bias voltages.

Abstract: A folded cascode differential amplifier includes a high-voltage input stage and a low-voltage output stage. The input stage is formed from high-voltage MOS transistors, two of which constitute a differential pair. The output stage is formed from low-voltage MOS transistors, some of which constitute a current mirror circuit connected to the differential pair. The output stage also includes at least one transistor that amplifies a voltage produced in the current mirror circuit to generate an output voltage signal. The high-voltage MOS transistors have higher breakdown voltages than the low-voltage MOS transistors. Incorporation of both types of transistors into a single amplifier reduces the necessary number of transistors and the necessary number of bias voltages.