Abstract: An induction heating device includes: a rotor having a rotation shaft; a heating part disposed to be opposed to the rotor at a distance; a magnetic flux generating part provided at the rotor to generate magnetic flux for the heating part; a magnetic flux guide part provided on an opposed surface side of the heating part that is opposed to the magnetic flux generating part to guide the magnetic flux from the magnetic flux generating part to the heating part; and a flow passage provided in the heating part to allow a heating medium to circulate. The magnetic flux guide part includes magnetic substance parts. The magnetic flux guide part has a structure in which the magnetic substance parts and the insulator parts extend along a direction from the magnetic flux generating part to the heating part and are alternately layered along a circumferential direction of the heating part.

Abstract: An induction heating device includes: a rotor having a rotation shaft; a heating part disposed to be opposed to the rotor at a distance; a magnetic flux generating part provided at the rotor to generate magnetic flux for the heating part; a magnetic flux guide part provided on an opposed surface side of the heating part that is opposed to the magnetic flux generating part to guide the magnetic flux from the magnetic flux generating part to the heating part; and a flow passage provided in the heating part to allow a heating medium to circulate. The magnetic flux guide part includes magnetic substance parts. The magnetic flux guide part has a structure in which the magnetic substance parts and the insulator parts extend along a direction from the magnetic flux generating part to the heating part and are alternately layered along a circumferential direction of the heating part.

Abstract: The device is comprised of a backing board, a light-emitting element disposed on the backing board having a laminate structure in which a second semiconductor layer is disposed above a first semiconductor layer, a light-permeable board disposed over the light-emitting element, a first connecting electrode ranging from a first side face of the backing board to a first side face of the light-permeable board and electrically connected to the first semiconductor layer, and a second connecting electrode ranging from a second side face of the backing board to a second side face of the light-permeable board and electrically connected to the second semiconductor layer, wherein connection to the mounting board is established via a second side face of the first connecting electrode and the second connecting electrode, the second side being opposed to a first side face looking to the backing board and the light-permeable board.

Abstract: An induction heating apparatus includes a rotor having a rotation shaft, and a stator having a heating portion disposed at a distance from the rotor. A coil that generates magnetic flux in a direction of the heating portion is provided in the rotor. The heating portion is formed of a composite material of a magnetic material and a conductive material, and has a structure in which a magnetic material portion and a conductive material portion are combined. When the coil is in a position opposed to the heating portion, a cross-sectional area of the magnetic material portion is smaller than an area of linkage of magnetic flux generated by the coil in the heating portion, and the conductive material portion is disposed to surround a periphery of the magnetic material portion. A flow passage in which the heating medium circulates is provided in the heating portion.

Abstract: A semiconductor device includes a silicon substrate, alight-emitting function layer made of nitride semiconductor, and at least one multilayer film in which two to four lamination pairs are laminated, the lamination pair being a laminated body of a first semiconductor layer made of AlxGa1-xN and a second semiconductor layer made of AlYGa1-YN, the multilayer film being arranged between the silicon substrate and the light-emitting function layer, wherein in the lamination pair that is the closest to the light-emitting function layer in the multilayer film, an Al composition X is equal to or larger than an Al composition Y, in the other lamination pair, the Al composition X is larger than the Al composition Y.

Abstract: A semiconductor photocathode includes an AlXGa1-XN layer (0?X<1) bonded to a glass substrate via an SiO2 layer and an alkali-metal-containing layer formed on the AlXGa1-XN layer. The AlXGa1-XN layer includes a first region, a second region, an intermediate region between the first and second regions. The second region has a semiconductor superlattice structure formed by laminating a barrier layer and a well layer alternately, the intermediate region has a semiconductor superlattice structure formed by laminating a barrier layer and a well layer alternately. When a pair of adjacent barrier and well layers is defined as a unit section, an average value of a composition ratio X of Al in a unit section decreases monotonously with distance from an interface position between the second region and the SiO2 layer at least in the intermediate region.

Abstract: An induction heating apparatus includes a rotor having a rotation shaft, and a stator having a heating portion disposed at a distance from the rotor. A coil that generates magnetic flux in a direction of the heating portion is provided in the rotor. The heating portion is formed of a composite material of a magnetic material and a conductive material, and has a structure in which a magnetic material portion and a conductive material portion are combined. When the coil is in a position opposed to the heating portion, a cross-sectional area of the magnetic material portion is smaller than an area of linkage of magnetic flux generated by the coil in the heating portion, and the conductive material portion is disposed to surround a periphery of the magnetic material portion. A flow passage in which the heating medium circulates is provided in the heating portion.

Abstract: A semiconductor device includes a silicon substrate, an aluminum nitride layer which is arranged on the silicon substrate and has a region where silicon is doped thereof as an impurity, a buffer layer which is arranged on the aluminum nitride layer and has a structure where a plurality of nitride semiconductor films are laminated, and a semiconductor functional layer which is arranged on the buffer layer and made of nitride semiconductor.

Abstract: A semiconductor wafer includes a multilayered film having a structure in which nondoped first nitride semiconductor layers and nondoped second nitride semiconductor layers with a larger lattice constant than the first nitride semiconductor layer are laminated alternately, and a nondoped third nitride semiconductor layer which is located on the multilayered film and has a larger lattice constant than the first nitride semiconductor layer, wherein the semiconductor wafer has conductivity in a film-thickness direction.

Abstract: A semiconductor photocathode includes an AlXGa1-XN layer (0?X<1) bonded to a glass substrate via an SiO2 layer and an alkali-metal-containing layer formed on the AlXGa1-XN layer. The AlXGa1-XN layer includes a first region, a second region, an intermediate region between the first and second regions. The second region has a semiconductor superlattice structure formed by laminating a barrier layer and a well layer alternately, the intermediate region has a semiconductor superlattice structure formed by laminating a barrier layer and a well layer alternately. When a pair of adjacent barrier and well layers is defined as a unit section, an average value of a composition ratio X of Al in a unit section decreases monotonously with distance from an interface position between the second region and the SiO2 layer at least in the intermediate region.

Abstract: A semiconductor device includes a silicon substrate, an aluminum nitride layer which is arranged on the silicon substrate and has a region where silicon is doped thereof as an impurity, a buffer layer which is arranged on the aluminum nitride layer and has a structure where a plurality of nitride semiconductor films are laminated, and a semiconductor functional layer which is arranged on the buffer layer and made of nitride semiconductor.

Abstract: A semiconductor wafer includes a multilayered film having a structure in which nondoped first nitride semiconductor layers and nondoped second nitride semiconductor layers with a larger lattice constant than the first nitride semiconductor layer are laminated alternately, and a nondoped third nitride semiconductor layer which is located on the multilayered film and has a larger lattice constant than the first nitride semiconductor layer, wherein the semiconductor wafer has conductivity in a film-thickness direction.

Abstract: A semiconductor light emitting device includes: a conductive substrate; a semiconductor light emitting layer which includes a first semiconductor layer formed on one surface of the conductive substrate and having a first conductivity type, and a second semiconductor layer formed on the first semiconductor layer and having a second conductivity type opposite to the first conductivity type; first light emitting spots which are alternately arranged around a periphery of the semiconductor light emitting layer and emitting light to an exterior from the semiconductor light emitting layer; second light emitting spots having surfaces intersecting with the first light emitting spots and emitting light at an amount smaller than an amount of light emitted via the first light emitting spots; and wirings arranged along the second light emitting spots and electrically short circuiting an area between the first light emitting layer and the surfaces of the conductive substrate.

Abstract: A light-generating semiconductor region is grown on a substrate of electroconductive silicon or like light-absorptive material. An anode is placed atop the light-generating semiconductor region, and a cathode under the substrate. The light-generating semiconductor region and the substrate are encapsulated in an epoxy envelope. In order to prevent the substrate from absorbing the light that has been radiated from the light-generating semiconductor region and reflected back from the envelope, the substrate has its side surfaces covered by a reflector layer. The reflector layer has its surfaces roughened, as a result of the roughening of the underlying substrate surfaces by dicing, for scattering the incident light.

Abstract: An aspect of the present invention inheres in a semiconductor light-emitting element includes a light-emitting functional stacked body including a light-emitting region having a light-emitting function, and including a light extraction surface for extracting light emitted from the light-emitting region, and an upward convex lens disposed on the light extraction surface.

Abstract: The method is disclosed as applied to roughening the light-emitting surface of an LED wafer for reduction of the internal total reflection of the light generated. A masking film of silver is first deposited on the surface of a wafer to be diced into LED chips. Then the masking film is heated to cause its coagulation into discrete particles. Then, using the silver particles as a mask, the wafer surface is dry etched to create pits therein. The deposition of silver on the wafer surface and its thermal coagulation into particles may be either successive or concurrent.

Abstract: An LED has a light-generating semiconductor region formed on a baseplate via a metal-made reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types. An annular marginal space is left around the reflector layer between the light-generating semiconductor region and the substrate. In order to preclude the thermal migration of the reflector metal onto the side surfaces of the light-generating semiconductor region, with a possible short-circuiting of the pair of claddings across the active layer, an anti-migration seal is received in the annular marginal space created around the reflector layer between the light-generating semiconductor region and the baseplate.

Abstract: A semiconductor light emitting device includes: a conductive substrate; a semiconductor light emitting layer which includes a first semiconductor layer formed on one surface of the conductive substrate and having a first conductivity type, and a second semiconductor layer formed on the first semiconductor layer and having a second conductivity type opposite to the first conductivity type; first light emitting spots which are alternately arranged around a periphery of the semiconductor light emitting layer and emitting light to an exterior from the semiconductor light emitting layer; second light emitting spots having surfaces intersecting with the first light emitting spots and emitting light at an amount smaller than an amount of light emitted via the first light emitting spots; and wirings arranged along the second light emitting spots and electrically short circuiting an area between the first light emitting layer and the surfaces of the conductive substrate.

Abstract: An aspect of the present invention inheres in a semiconductor light-emitting element includes a light-emitting functional stacked body including a light-emitting region having a light-emitting function, and including a light extraction surface for extracting light emitted from the light-emitting region, and an upward convex lens disposed on the light extraction surface.

Abstract: A light-generating semiconductor region is grown on a substrate of electroconductive silicon or like light-absorptive material. An anode is placed atop the light-generating semiconductor region, and a cathode under the substrate. The light-generating semiconductor region and the substrate are encapsulated in an epoxy envelope. In order to prevent the substrate from absorbing the light that has been radiated from the light-generating semiconductor region and reflected back from the envelope, the substrate has its side surfaces covered by a reflector layer. The reflector layer has its surfaces roughened, as a result of the roughening of the underlying substrate surfaces by dicing, for scattering the incident light.