Abstract: A signal processing unit includes: a synchronizing signal control section configured to control length of a synchronizing signal for a predetermined row in a frame, in which the synchronizing signal serves as a basis of charge read processing that reads charge from a pixel array on a row basis; and a timing adjustment section configured to adjust timing of electronic shutter operation of unit pixels, according to the length of the synchronizing signal for the predetermined row controlled by the synchronizing signal control section.

Abstract: A solid-state imaging device includes: a pixel section wherein pixels including photoelectric conversion devices are arranged in a matrix; and a pixel driving section including a row selection circuit which controls the pixels to perform an electronic shutter operation and readout of the pixel section. The row selection circuit has a function of selecting a readout row from which a signal is read out and a shutter row on which reset is performed by discharging charge accumulated in the photoelectric conversion devices, in accordance with address and control signals. The row selection circuit can set, in accordance with the address and control signals, in the pixels of the selected row, at least a readout state, a discharge state where a smaller amount of the charge accumulated in the photoelectric conversion devices than the reset is discharged, an electronic shutter state, and a charge state where the charge is accumulated in the photoelectric conversion devices.

Abstract: A solid-state imaging device includes: a pixel section in which a plurality of pixels including a photoelectric conversion element are arranged in a matrix; a pixel driving section that drives the pixels in a row unit so as to read out a pixel signal from the pixel section; a column processing section that performs a column process, synchronized with a first clock of a first frequency previously selected, on the pixel signal read out by driving of the pixel driving section; and a rate conversion control section that performs a rate conversion control of data processed in the column processing section in accordance with rate conversion information. The rate conversion control section includes a first rate converter, a second rate converter, a data rate conversion section, and a data output section.

Abstract: There is provided an imaging apparatus including a correction section configured to amplify an addition pixel value, which is a value obtained by adding results of photoelectric conversion on a plurality of pixels, according to an amplification factor set based on a number of defective pixels included in the plurality of pixels, and output the amplified addition pixel value as a corrected addition pixel value.

Abstract: Disclosed herein is a solid-state image pickup element, including a pixel portion in which plural pixels each including a photoelectric conversion element for converting an optical signal into an electrical signal and accumulating therein the resulting electrical signal in accordance with an exposure period of time are disposed in a matrix; and a pixel driving portion adapted to control operations of the pixels in rows so as to carry out an electronic shutter operation and a reading operation of the pixel portion.

Abstract: A solid-state imaging device includes: a pixel section wherein pixels including photoelectric conversion devices are arranged in a matrix; and a pixel driving section including a row selection circuit which controls the pixels to perform an electronic shutter operation and readout of the pixel section. The row selection circuit has a function of selecting a readout row from which a signal is read out and a shutter row on which reset is performed by discharging charge accumulated in the photoelectric conversion devices, in accordance with address and control signals. The row selection circuit can set, in accordance with the address and control signals, in the pixels of the selected row, at least a readout state, a discharge state where a smaller amount of the charge accumulated in the photoelectric conversion devices than the reset is discharged, an electronic shutter state, and a charge state where the charge is accumulated in the photoelectric conversion devices.

Abstract: A solid-state imaging device includes: a pixel section wherein pixels including photoelectric conversion devices are arranged in a matrix; and a pixel driving section including a row selection circuit which controls the pixels to perform an electronic shutter operation and readout of the pixel section. The row selection circuit has a function of selecting a readout row from which a signal is read out and a shutter row on which reset is performed by discharging charge accumulated in the photoelectric conversion devices, in accordance with address and control signals. The row selection circuit can set, in accordance with the address and control signals, in the pixels of the selected row, at least a readout state, a discharge state where a smaller amount of the charge accumulated in the photoelectric conversion devices than the reset is discharged, an electronic shutter state, and a charge state where the charge is accumulated in the photoelectric conversion devices.

Abstract: A solid-state imaging device includes: a pixel section in which a plurality of pixels including a photoelectric conversion element are arranged in a matrix; a pixel driving section that drives the pixels in a row unit so as to read out a pixel signal from the pixel section; a column processing section that performs a column process, synchronized with a first clock of a first frequency previously selected, on the pixel signal read out by driving of the pixel driving section; and a rate conversion control section that performs a rate conversion control of data processed in the column processing section in accordance with rate conversion information. The rate conversion control section includes a first rate converter, a second rate converter, a data rate conversion section, and a data output section.

Abstract: Disclosed herein is a solid-state image pickup element, including a pixel portion in which plural pixels each including a photoelectric conversion element for converting an optical signal into an electrical signal and accumulating therein the resulting electrical signal in accordance with an exposure period of time are disposed in a matrix; and a pixel driving portion adapted to control operations of the pixels in rows so as to carry out an electronic shutter operation and a reading operation of the pixel portion.

Abstract: A signal processing unit includes: a synchronizing signal control section configured to control length of a synchronizing signal for a predetermined row in a frame, in which the synchronizing signal serves as a basis of charge read processing that reads charge from a pixel array on a row basis; and a timing adjustment section configured to adjust timing of electronic shutter operation of unit pixels, according to the length of the synchronizing signal for the predetermined row controlled by the synchronizing signal control section.

Abstract: A solid-state imaging device includes: a pixel section in which a plurality of pixels including a photoelectric conversion element are arranged in a matrix; a pixel driving section that drives the pixels in a row unit so as to read out a pixel signal from the pixel section; a column processing section that performs a column process, synchronized with a first clock of a first frequency previously selected, on the pixel signal read out by driving of the pixel driving section; and a rate conversion control section that performs a rate conversion control of data processed in the column processing section in accordance with rate conversion information. The rate conversion control section includes a first rate converter, a second rate converter, a data rate conversion section, and a data output section.

Abstract: Disclosed herein is a solid-state image pickup element, including a pixel portion in which plural pixels each including a photoelectric conversion element for converting an optical signal into an electrical signal and accumulating therein the resulting electrical signal in accordance with an exposure period of time are disposed in a matrix; and a pixel driving portion adapted to control operations of the pixels in rows so as to carry out an electronic shutter operation and a reading operation of the pixel portion.

Abstract: There is provided an imaging apparatus including a correction section configured to amplify an addition pixel value, which is a value obtained by adding results of photoelectric conversion on a plurality of pixels, according to an amplification factor set based on a number of defective pixels included in the plurality of pixels, and output the amplified addition pixel value as a corrected addition pixel value.

Abstract: A solid-state imaging device includes: a pixel section in which a plurality of pixels including a photoelectric conversion element are arranged in a matrix; a pixel driving section that drives the pixels in a row unit so as to read out a pixel signal from the pixel section; a column processing section that performs a column process, synchronized with a first clock of a first frequency previously selected, on the pixel signal read out by driving of the pixel driving section; and a rate conversion control section that performs a rate conversion control of data processed in the column processing section in accordance with rate conversion information. The rate conversion control section includes a first rate converter, a second rate converter, a data rate conversion section, and a data output section.

Abstract: A solid-state imaging device includes: a pixel array section formed by a plurality of pixels including a photoelectric conversion element disposed in the form of a matrix; and control means for selectively controlling shutter operations and readout operations performed on the pixels of the pixel array section on a row-by-row basis to control an exposure time for the pixels, wherein the control means provides an exposure time lasting for Q frame periods to expose the pixels in each row of the pixel array section when sub-sampling reading is performed at a sub-sampling ratio of 1/Q (Q is a positive integer).

Abstract: A solid-state imaging device includes: a pixel section wherein pixels including photoelectric conversion devices are arranged in a matrix; and a pixel driving section including a row selection circuit which controls the pixels to perform an electronic shutter operation and readout of the pixel section. The row selection circuit has a function of selecting a readout row from which a signal is read out and a shutter row on which reset is performed by discharging charge accumulated in the photoelectric conversion devices, in accordance with address and control signals. The row selection circuit can set, in accordance with the address and control signals, in the pixels of the selected row, at least a readout state, a discharge state where a smaller amount of the charge accumulated in the photoelectric conversion devices than the reset is discharged, an electronic shutter state, and a charge state where the charge is accumulated in the photoelectric conversion devices.

Abstract: Disclosed herein is a solid-state image pickup element, including a pixel portion in which plural pixels each including a photoelectric conversion element for converting an optical signal into an electrical signal and accumulating therein the resulting electrical signal in accordance with an exposure period of time are disposed in a matrix; and a pixel driving portion adapted to control operations of the pixels in rows so as to carry out an electronic shutter operation and a reading operation of the pixel portion.

Abstract: An optical disk recording method for recording predetermined data on an optical disk on the basis of a first reference clock signal used for recording, the optical disk including a groove track having a wobble signal recorded thereon and a land track having a land pre-pit carrying track position information, the first reference clock signal being generated on the basis of the wobble signal reproduced from the optical disk, includes the steps of reproducing a pre-pit signal from the optical disk; generating a second reference clock signal from the pre-pit signal; detecting an amount of phase shift of the first reference clock signal using the second reference clock signal; and correcting the first reference clock signal on the basis of an average value of the detected amount of phase shift.

Abstract: A solid-state imaging device includes: a pixel array section formed by a plurality of pixels including a photoelectric conversion element disposed in the form of a matrix; and control means for selectively controlling shutter operations and readout operations performed on the pixels of the pixel array section on a row-by-row basis to control an exposure time for the pixels, wherein the control means provides an exposure time lasting for Q frame periods to expose the pixels in each row of the pixel array section when sub-sampling reading is performed at a sub-sampling ratio of 1/Q (Q is a positive integer).

Abstract: An optical disk recording method for recording predetermined data on an optical disk on the basis of a first reference clock signal used for recording, the optical disk including a groove track having a wobble signal recorded thereon and a land track having a land pre-pit carrying track position information, the first reference clock signal being generated on the basis of the wobble signal reproduced from the optical disk, includes the steps of reproducing a pre-pit signal from the optical disk; generating a second reference clock signal from the pre-pit signal; detecting an amount of phase shift of the first reference clock signal using the second reference clock signal; and correcting the first reference clock signal on the basis of an average value of the detected amount of phase shift.