Abstract: There is provided a substrate polishing machine which comprises a polishing surface and a substrate carrier for holding a substrate and bringing it into contact with the polishing surface. The substrate carrier comprises a carrier body, a substrate holding member for holding a substrate with a surface of the substrate to be polished being directed towards the polishing surface. The substrate holding member is mounted on the carrier body in such a manner that the substrate holding member is movable both towards and away from the polishing surface. The substrate polishing machine further comprises a substrate holding member positioning device provided on a side of the substrate holding member opposite to that used for holding the substrate. The substrate holding member positioning device has a flexible member which defines a chamber, and which, upon introduction of a non-compressible fluid, is expanded in a direction towards the polishing surface.

Abstract: An apparatus is used for manufacturing semiconductor device, and the apparatus is not required to be installed in a clean room and is capable of processing semiconductor wafers in a clean atmosphere without exposure to external environments. The apparatus comprises an enclosing structure defining a closed space isolated from an external environment, a purifying system for keeping the closed space clean, a processing device disposed in the closed space for processing a semiconductor wafer, and a pressure elevating device for keeping an internal pressure high in the closed space so as to be higher than a pressure in the external environment.

Abstract: The present invention is relates to a polishing method for polishing a semiconductor wafer (W) by pressing the semiconductor wafer (W) against a polishing surface (10) with use of a top ring (23) for holding the semiconductor wafer (W). A pressure chamber (70) is defined in the top ring (23) by attaching an elastic membrane (60) to a lower surface of a vertically movable member (62). The semiconductor wafer (W) is polished while a pressurized fluid is supplied to the pressure chamber (70) so that the semiconductor wafer (W) is pressed against the polishing surface (10) by a fluid pressure of the fluid. The semiconductor wafer (W) which has been polished is released from the top ring (23) by ejecting the pressurized fluid from an opening (62a) defined centrally in the vertically movable member (62).

Abstract: A polishing apparatus comprises a first polishing table having a first polishing surface, a substrate carrier for holding a substrate and positioning the substrate so as to bring a surface of the substrate into contact with the first polishing surface, a pressing mechanism for pressing, against the first polishing surface, the surface of the substrate which has been brought into contact with the first polishing surface by the substrate carrier, a retainer ring mounted on the substrate carrier so as to surround the substrate which has been pressed against the first polishing surface by the pressing mechanism, and a retainer-ring-position-adjustment mechanism for adjustably positioning the retainer ring relative to the substrate, which has been pressed against the first polishing surface, in directions toward and away from the first polishing surface.

Abstract: A substrate processing method comprising steps for forming a copper film on a surface of a substrate. These steps includes the step of filling a first metal in the trenches so as to form a plated film of the first metal on an entire surface of the substrate by electroplating, wherein the electromagnetic field is adjusted by the virtual anode so that differences of thickness of the plated film between the central portion and the peripheral portion of the substrate being minimized, and polishing and removing the plated film by pressing the substrate to the polishing surface, wherein the pressures pressing the substrate to the polishing surface at a central portion and a peripheral portion are adjusted.

Abstract: A substrate processing method comprising steps for forming a copper film on a surface of a substrate. These steps includes the step of filling a first metal in the trenches so as to form a plated film of the first metal on an entire surface of the substrate by electroplating, wherein the electromagnetic field is adjusted by the virtual anode so that differences of thickness of the plated film between the central portion and the peripheral portion of the substrate being minimized, and polishing and removing the plated film by pressing the substrate to the polishing surface, wherein the pressures pressing the substrate to the polishing surface at a central portion and a peripheral portion are adjusted.

Abstract: A polishing apparatus has a top ring for holding a workpiece to be polished and a polishing table movable relative to the top ring. The polishing table has a polishing surface for polishing the workpiece held by the top ring. The polishing apparatus further has a polishing liquid supply device for supplying a polishing liquid to the polishing surface. At least one of the top ring and the polishing table reciprocates linearly in a first direction. The workpiece can be polished uniformly by the polishing surface because at least one of the top ring and the polishing table reciprocates linearly in the first direction.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus comprises a turntable having a polishing surface, a top ring for holding a workpiece and pressing the workpiece against the polishing surface to polish the workpiece, at least three cleaning apparatuses for cleaning polished workpieces, and a transfer structure for transferring the polished workpieces between at least three cleaning apparatuses. The polishing apparatus further includes a rotary transporter disposed in a position which can be accessed by said top rings and having a plurality of portions positioned on a predetermined circumference from a center of rotation of the rotary transporter for holding the workpieces.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus comprises a turntable having a polishing surface, a top ring for holding a workpiece and pressing the workpiece against the polishing surface to polish the workpiece, at least three cleaning apparatuses for cleaning polished workpieces, and a transfer structure for transferring the polished workpieces between at least three cleaning apparatuses. The polishing apparatus further includes a rotary transporter disposed in a position which can be accessed by said top rings and having a plurality of portions positioned on a predetermined circumference from a center of rotation of the rotary transporter for holding the workpieces.

Abstract: A dressing apparatus is used for dressing a polishing surface of a polishing table used for polishing a workpiece such as a semiconductor wafer. The dressing apparatus for dressing apparatus comprises a dresser having a dressing surface for dressing the polishing surface, and the dressing surface has an area which covers an entire area of the polishing surface.

Abstract: A dressing apparatus dresses a polishing surface of a polishing table used for polishing a workpiece such as a semiconductor wafer in a polishing apparatus. The dressing apparatus comprises a dresser having an elongate dressing surface for dressing the polishing surface, and the dressing surface has a flat surface which contacts the polishing surface. The dressing surface also has one of a tapered surface extending from the flat surface and inclined so as to be directed away from the polishing surface and a curved surface extending from the flat surface and curved so as to be directed away from the polishing surface.

Abstract: A dressing apparatus dresses a polishing surface of a polishing table used for polishing a workpiece such as a semiconductor wafer in a polishing apparatus. The dressing apparatus comprises a dresser body (31) connected to a dresser drive shaft (23) which is vertically movable, a dresser plate (32) which is vertically movable with respect to the dresser body (31), and a dressing member (22) held by the dresser plate (32) for dressing the polishing surface (1a).

Abstract: Disclosed is a dressing apparatus wherein a polishing surface can be regenerated stably over a long period without any danger of an object to be polished being scratched. A dressing surface 50a of a dresser 48 is caused to slide on a polishing surface 30a of a polishing table 22 while the dressing surface is urged against the polishing surface. The dressing surface is formed from a grindstone 50.

Abstract: A polishing surface is conditioned by pressing a diamond dresser against the polishing surface to thinly shave a surface of the polishing surface. Foreign matter clogging concavities formed in the polishing surface is scraped by pressing a brush dresser against the polishing surface in a state such that a polishing liquid is not supplied to the polishing table. A liquid composed of a mixture of a liquid or inert gas with pure water or a chemical liquid is ejected onto the polishing surface to clean the polishing surface.

Abstract: A polishing apparatus is used for polishing a surface of a workpiece such as a semiconductor wafer or a glass substrate. The polishing apparatus comprises a polishing table having a polishing surface thereon, a plurality of workpiece holders each for holding a workpiece and pressing the workpiece against the polishing surface, and a controller for controlling the workpiece holders individually so that polishing operations of the workpiece holders are controlled independently of each other.

Abstract: The present invention provides a substrate holder for holding and transferring a thin substrate, comprising a substrate support member having a recessed area for placing a thin substrate therein and substrate mount portions formed in the recessed area in the vicinity of a circumferential edge thereof. The substrate mount portions is adapted to be engaged with an outer circumferential portion of a backside of the substrate placed in the recessed area. The substrate holder further comprises a substrate detector for detecting presence or absence of the substrate in the recessed area.

Abstract: A substrate processing method comprising steps for forming a copper film on a surface of a substrate. These steps includes the step of filling a first metal in the trenches so as to form a plated film of the first metal on an entire surface of the substrate by electroplating, wherein the electromagnetic field is adjusted by the virtual anode so that differences of thickness of the plated film between the central portion and the peripheral portion of the substrate being minimized, and polishing and removing the plated film by pressing the substrate to the polishing surface, wherein the pressures pressing the substrate to the polishing surface at a central portion and a peripheral portion are adjusted.

Abstract: There is disclosed a polishing apparatus comprising: a polishing table having a first axis and a counterweight provided on the polishing table. The polishing table is adapted to be subjected to a circular orbital motion in which the first axis of the polishing table is rotated about an orbit center axis while the orientation of the polishing table is kept substantially constant. The counterweight cancels a centrifugal force generated by the circular orbital motion of the polishing table.

Abstract: A polishing apparatus for polishing a surface of a workpiece includes a housing unit, a partition wall partitioning an interior of the housing unit into a first chamber and a second chamber, a polishing section disposed in the first chamber and having a turntable with an abrasive cloth mounted on an upper surface thereof and a top ring positioned above the turntable for supporting the workpiece to be polished and pressing the workpiece against the abrasive cloth, and a cleaning section disposed in the second chamber and cleaning the workpiece which has been polished. The polishing apparatus further includes a transferring device for transferring the workpiece which has been polished from the polishing section to the cleaning section through an opening and an exhaust system for exhausting ambient air from each of the polishing section and cleaning section separately and independently.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing section for polishing a surface of a workpiece, a cleaning section for cleaning the workpiece which has been polished, a first liquid leakage sensor provided in the polishing section for detecting a liquid leakage which occurs in the polishing section, and a second liquid leakage sensor provided in the cleaning section for detecting a liquid leakage which occurs in the cleaning section. The polishing apparatus further includes a controlling device for stopping the supply of liquid to the polishing section or the cleaning section in which the liquid leakage occurs when either one of the first and second liquid leakage sensors detects the liquid leakage.