Abstract: A semiconductor device includes a timing correction circuit coupled to an external terminal for receiving an input data signal to change a relative timing between the input data signal and an internal clock signal to generate a plurality of relative latch timings to latch one of the input data signal and the internal clock signal in response to the other one of the input data signal and the internal clock signal, thereby selecting an optimal relative latch timing according to a result of the latching, and a latch circuit coupled to the timing correction circuit to latch the input data signal with the optimal relative latch timing.

Abstract: A memory having a plurality of memory cells and a plurality of redundant memory cells accesses a redundant memory cell in lieu of a failed memory cell. The memory is tested for failed memory cells. Addresses of detected failed memory cells are stored in a first set of registers, and addresses of redundant memory cells are stored in a second, corresponding set of registers. An external address is compared with the address stored in the first set of registers and if there is a match, the corresponding redundant memory cell address stored in the second register set is used to access the memory, in lieu of the external memory address.