Abstract: An average value of dimensions of resist patterns formed each time exposure processing is effected on semiconductor substrates of a predetermined number of lots, is compared with a target dimension. When a drift between each of the dimensions of the formed resist patterns and the target dimension is larger than a first value, exposure energy is corrected with a relatively large correction value &agr;1. When the drift between each of the dimensions of the formed resist patterns and the target dimension is smaller than the first value and larger than a second value, exposure energy is corrected with a relatively small correction value &agr;2. When the drift between each of the dimensions of the formed resist patterns and the target dimension is smaller than the second value, no exposure energy is corrected. Exposure processing is effected on a semiconductor substrate of the next lot by using the calculated exposure energy.

Abstract: A process management system in accordance with the present invention includes inspection apparatuses for inspecting defects on a wafer, the inspection apparatuses being connected through a communication network, inspection information and image information obtained from these inspection apparatuses being collected to construct a data base and an image file, therein definition of defects is given by combinations of elements which characterize the defect based on the inspection information and the image information obtained from the inspection apparatuses. By giving definition of the defect, characteristics of the defect can be subdivided and known. Therefore, the cause of a defect can be studied.

Abstract: An average value of dimensions of resist patterns formed each time exposure processing is effected on semiconductor substrates of a predetermined number of lots, is compared with a target dimension. When a drift between each of the dimensions of the formed resist patterns and the target dimension is larger than a first value, exposure energy is corrected with a relatively large correction value &agr;1. When the drift between each of the dimensions of the formed resist patterns and the target dimension is smaller than the first value and larger than a second value, exposure energy is corrected with a relatively small correction value &agr;2. When the drift between each of the dimensions of the formed resist patterns and the target dimension is smaller than the second value, no exposure energy is corrected. Exposure processing is effected on a semiconductor substrate of the next lot by using the calculated exposure energy.

Abstract: A process management system in accordance with the present invention includes inspection apparatuses for inspecting defects on a wafer, the inspection apparatuses being connected through a communication network, inspection information and image information obtained from these inspection apparatuses being collected to construct a data base and an image file, therein definition of defects is given by combinations of elements which characterize the defect based on the inspection information and the image information obtained from the inspection apparatuses. By giving definition of the defect, characteristics of the defect can be subdivided and known. Therefore, the cause of a defect can be studied.

Abstract: A process management system in accordance with the present invention includes inspection apparatuses for inspecting defects on a wafer, the inspection apparatuses being connected through a communication network, inspection information and image information obtained from these inspection apparatuses being collected to construct a data base and an image file, therein definition of defects is given by combinations of elements which characterize the defect based on the inspection information and the image information obtained from the inspection apparatuses. By giving definition of the defect, characteristics of the defect can be subdivided and known. Therefore, the cause of a defect can be studied.