Abstract: A disclosed substrate processing apparatus includes a processing chamber, a substrate support stage. The substrate support provides at least one recess. The at least one recess opens downward. The at least one supply pipe is configured to supply a heat transfer medium to the at least one recess. The at least one partition forms at least one space together with the substrate support stage. The at least one space include the at least one recess. The at least one collection pipe is configured to collect the heat transfer medium from the at least one space. The at least one flow rate adjusting valve that is connected to the at least one supply pipe. The controller is configured to control the at least one flow rate adjusting valve to adjust a flow rate of the heat transfer medium supplied to the at least one supply pipe.

Abstract: A substrate processing apparatus includes a plasma processing chamber configured to accommodate a substrate, and a ring assembly provided around the substrate and including a dielectric, and a potential generator disposed on the dielectric and formed of a conductive material. A lower surface of the potential generator is disposed at a position higher than an upper surface of the substrate. The substrate processing apparatus further includes a power supply configured to supply a direct current signal or a radio frequency signal to the potential generator.