Patents by Inventor Tetsunori Higashi

Tetsunori Higashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor memory having a restore voltage control circuit
    Patent number: 6157581
    Abstract: According to disclosed embodiments, a semiconductor memory (100) can include a restore voltage control circuit (106) that can supply a first internal voltage V.sub.INT that is lower than an external power supply voltage Vcc, a second internal voltage V.sub.INTS 1 that is lower than the first internal voltage V.sub.INT, and a third internal voltage V.sub.INT 2 equal to or less than the first internal voltage V.sub.INT and greater than the second internal voltage V.sub.INTS 1. The semiconductor memory (100) can further include a p-channel MOS transistor (T108) that can provide a conductive path between a voltage supply path (116) and a sense amplifier (104) in response to a sense signal Se at the first internal voltage V.sub.INT. A switch signal generating circuit (112) can supply a switch signal Sw that can change the potential on the voltage supply path (116) from the second internal voltage V.sub.INTS 1 to the third internal voltage V.sub.INTS 2 while transistor T108 is conductive.
    Type: Grant
    Filed: August 11, 1999
    Date of Patent: December 5, 2000
    Assignee: NEC Corporation
    Inventor: Tetsunori Higashi