Abstract: A complementary metal-oxide semiconductor (CMOS) active pixel sensor includes a photodiode, a transfer transistor with a coupled gate, a reset transistor and a signal transfer circuit, where the photodiode generates electric charges in response to incident light, the transfer transistor transfers the electric charges integrated in the photodiode to a floating diffusion node, wherein the transfer transistor has a first transfer gate and a second transfer gate, and the first and second transfer gates have a coupled gate structure, the reset transistor resets a potential level of the floating diffusion node by a given voltage level, the signal transfer circuit transfers the potential level of the floating diffusion node to an internal circuit in response to a selection signal, and the CMOS active pixel sensor with the coupled gate may increase a capacity of the photodiode and reduce an image lag by using a voltage coupling effect of the coupled gate.

Abstract: An image sensor includes a pixel with a drive transistor and a select transistor. The drive transistor is driven according to a voltage at a floating diffusion node. The select transistor is coupled in series with the drive transistor for being turned on when the pixel is selected. The image sensor also includes a current mirror unit having first and second branches conducting mirrored currents. The first branch is coupled to the drive transistor, and the second branch is coupled to the select transistor at an output node of the pixel. With such biasing by the current mirror, gain drop in the drive transistor is minimized.

Abstract: Color image sensors include pixels having varying color characteristics. One of the pixels is a cyan-type pixel, which includes primary and secondary photodetectors therein. The primary photodetector extends adjacent a portion of a surface of a semiconductor substrate that is configured to receive visible light incident thereon. The secondary photodetector is buried in the semiconductor substrate. The secondary photodetector is configured to receive visible light that has passed through the primary photodetector.

Abstract: A pixel circuit of an image sensor includes a floating diffusion node and a reset transistor. The reset transistor is coupled between the floating diffusion node and a reset control signal node of another pixel circuit of the image sensor. A voltage applied on the reset control signal node of the other pixel circuit is a reset voltage transmitted to the floating diffusion node via the reset transistor.

Abstract: An image sensor includes a pixel with a drive transistor and a select transistor. The drive transistor is driven according to a voltage at a floating diffusion node. The select transistor is coupled in series with the drive transistor for being turned on when the pixel is selected. The image sensor also includes a current mirror unit having first and second branches conducting mirrored currents. The first branch is coupled to the drive transistor, and the second branch is coupled to the select transistor at an output node of the pixel. With such biasing by the current mirror, gain drop in the drive transistor is minimized.

Abstract: An image sensor includes a set of at least two pixels each sensing light of a same color coupled to a signal converter. A driver simultaneously turns on a respective switching element for transferring a respective photocurrent from a respective photodiode within each of such pixels to the signal converter, for capturing a moving image. Alternatively, the driver separately turns on the respective switching element for sequentially transferring a respective photocurrent from a respective photodiode within each of such pixels to the signal converter, for capturing a still image.

Abstract: A solid-state image-sensing device includes a pixel array and an averaging unit. The pixel array includes a matrix of pixels and includes a respective output line for each of a plurality of pixel groupings such as for each column of pixels. The averaging unit receives respective signals from first and second output lines of the pixel array to generate a pulse width signal that indicates an average of such respective signals. A respective signal of the first output line is generated from combining photocurrents from a first set of at least two pixels sensing a same first color in the pixel array.

Abstract: Provided are an improved solid-state image-sensing device for averaging sub-sampled analog signals and a method for driving the same. The solid-state image-sensing device receives a video signal from each pixel column and converts the video signal into a digital signal while a switch for averaging is turned off when the solid-state image-sensing device captures a still image. When the solid-state image-sensing device photographs a moving picture, one of two CDS circuits receives a signal corresponding to an average of video signals of columns having the same color pixel and converts the signal into a digital signal using the switch turned on.

Abstract: An image pickup device includes an active pixel sensor (APS), a row driver, and a leakage current breaker. The active pixel sensor includes an array of a plurality of pixels. The row driver selects at least one pixel to be activated to output signals. The leakage current breaker decreases the leakage current through the unselected pixels by applying a leakage current breaker voltage at the bit lines of the APS array.

Abstract: A pixel circuit of an image sensor includes a photo-converting unit such as a photo-diode for generating charge from incident light. The pixel circuit also includes a charge storing capacitor for storing the charge generated by the photo-converting unit. The pixel circuit further includes a floating diffusion node that receives the charge from the charge storing unit after being reset. Thus, an image signal VSIG is generated after a reset signal VRES is generated from the pixel circuit.

Abstract: Color image sensors include pixels having varying color characteristics. One of the pixels is a cyan-type pixel, which includes primary and secondary photodetectors therein. The primary photodetector extends adjacent a portion of a surface of a semiconductor substrate that is configured to receive visible light incident thereon. The secondary photodetector is buried in the semiconductor substrate. The secondary photodetector is configured to receive visible light that has passed through the primary photodetector.

Abstract: A solid-state image-sensing device includes a pixel array and an averaging unit. The pixel array includes a matrix of pixels and includes a respective output line for each of a plurality of pixel groupings such as for each column of pixels. The averaging unit receives respective signals from first and second output lines of the pixel array to generate a pulse width signal that indicates an average of such respective signals. A respective signal of the first output line is generated from combining photocurrents from a first set of at least two pixels sensing a same first color in the pixel array.

Abstract: An image sensor includes a set of at least two pixels each sensing light of a same color coupled to a signal converter. A driver simultaneously turns on a respective switching element for transferring a respective photocurrent from a respective photodiode within each of such pixels to the signal converter, for capturing a moving image. Alternatively, the driver separately turns on the respective switching element for sequentially transferring a respective photocurrent from a respective photodiode within each of such pixels to the signal converter, for capturing a still image.

Abstract: An image sensor includes a set of at least two pixels each sensing light of a same color coupled to a signal converter. A driver simultaneously turns on a respective switching element for transferring a respective photocurrent from a respective photodiode within each of such pixels to the signal converter, for capturing a moving image. Alternatively, the driver separately turns on the respective switching element for sequentially transferring a respective photocurrent from a respective photodiode within each of such pixels to the signal converter, for capturing a still image.

Abstract: A pixel circuit of an image sensor includes a photo-converting unit such as a photo-diode for generating charge from incident light. The pixel circuit also includes a charge storing capacitor for storing the charge generated by the photo-converting unit. The pixel circuit further includes a floating diffusion node that receives the charge from the charge storing unit after being reset. Thus, an image signal VSIG is generated after a reset signal VRES is generated from the pixel circuit.

Abstract: A pixel circuit of an image sensor includes a floating diffusion node and a reset transistor. The reset transistor is coupled between the floating diffusion node and a reset control signal node of another pixel circuit of the image sensor. A voltage applied on the reset control signal node of the other pixel circuit is a reset voltage transmitted to the floating diffusion node via the reset transistor.

Abstract: A complementary metal-oxide semiconductor (CMOS) active pixel sensor includes a photodiode, a transfer transistor with a coupled gate, a reset transistor and a signal transfer circuit, where the photodiode generates electric charges in response to incident light, the transfer transistor transfers the electric charges integrated in the photodiode to a floating diffusion node, wherein the transfer transistor has a first transfer gate and a second transfer gate, and the first and second transfer gates have a coupled gate structure, the reset transistor resets a potential level of the floating diffusion node by a given voltage level, the signal transfer circuit transfers the potential level of the floating diffusion node to an internal circuit in response to a selection signal, and the CMOS active pixel sensor with the coupled gate may increase a capacity of the photodiode and reduce an image lag by using a voltage coupling effect of the coupled gate.

Abstract: A CMOS image sensor having buried channel MOS transistors is disclosed. The CMOS image sensor includes a photo converting device and a source follower transistor. The photo converting device generates a current signal and changes a voltage of a floating node in response to energy of an incident light. The source follower transistor has a source region doped with a first conductivity-type material, a drain region doped with the first conductivity-type material, a gate region doped with a second conductivity-type material that is complementary to the first conductivity-type material, and a buried channel having the first conductivity-type material. The buried channel is formed between the source region and the drain region and under the gate region.

Abstract: Provided are an improved solid-state image-sensing device for averaging sub-sampled analog signals and a method for driving the same. The solid-state image-sensing device receives a video signal from each pixel column and converts the video signal into a digital signal while a switch for averaging is turned off when the solid-state image-sensing device captures a still image. When the solid-state image-sensing device photographs a moving picture, one of two CDS circuits receives a signal corresponding to an average of video signals of columns having the same color pixel and converts the signal into a digital signal using the switch turned on.

Abstract: An image sensor includes a set of at least two pixels each sensing light of a same color coupled to a signal converter. A driver simultaneously turns on a respective switching element for transferring a respective photocurrent from a respective photodiode within each of such pixels to the signal converter, for capturing a moving image. Alternatively, the driver separately turns on the respective switching element for sequentially transferring a respective photocurrent from a respective photodiode within each of such pixels to the signal converter, for capturing a still image.