Abstract: On a p.sup.+ diffused region which is to be a lower electrode of a capacitor, a silicon nitride film which is a capacitor insulating layer is formed. An upper electrode is formed on this silicon nitride film. The upper electrode has a non-doped polycrystalline silicon film and a silicide layer. Non-doped polycrystalline silicon film is formed in contact with silicon nitride film. Silicide layer is formed on a surface of non-doped polycrystalline silicon film. Thus, a capacitor structure is obtained in which a larger capacitance and a higher breakdown voltage can be assured, so that it would not operate inaccurately even when it is integrated to a higher degree.

Abstract: On a p.sup.+ diffused region which is to be a lower electrode of a capacitor, a silicon nitride film which is a capacitor insulating layer is formed. An upper electrode is formed on this silicon nitride film. The upper electrode has a non-doped polycrystalline silicon film and a silicide layer. Non-doped polycrystalline silicon film is formed in contact with silicon nitride film. Silicide layer is formed on a surface of non-doped polycrystalline silicon film. Thus, a capacitor structure is obtained in which a larger capacitance and a higher breakdown voltage can be assured, so that it would not operate inaccurately even when it is integrated to a higher degree.

Abstract: To manufacture a semiconductor device a first insulating oxide film and a second thicker insulating oxide film, which continues to the first insulating oxide film, are formed on a semiconductor substrate. The first and second insulating oxide films are covered by a polysilicon film selectively formed on a patterned nitride layer or formed over the semiconductor substrate. In the second case, a silicon nitride film is formed in the lowermost layer portion of the polysilicon film by implanting nitrogen ions and then applying a heat treatment. The polysilicon and silicon nitride films are patterned for forming first and second polysilicon resistance films on the first and second insulating oxide films, respectively. A first electrode is connected to the first polysilicon resistance film and a second electrode is connected to the second polysilicon resistance film.

Abstract: A thin first insulating oxide film is formed on a semiconductor substrate. A thick second insulating oxide film is formed on a semiconductor substrate. A first polysilicon resistance film is formed on the first insulating oxide film. A second polysilicon resistance film is formed on the second insulating oxide film. An insulating protection film, which contains a large amount of hydrogen ion and covers the first polysilicon resistance film, second polysilicon resistance film, first electrode and second electrode, is formed on the semiconductor substrate. A hydrogen ion intercepting film, which prevents passage of hydrogen ion, is interposed between the first insulating oxide film and the first polysilicon resistance film and between the second insulating oxide film and second polysilicon resistance film.

Abstract: A bipolar RAM comprising a plurality of memory cells formed of cross-coupled bipolar transistors and a peripheral bipolar circuit formed of bipolar transistor, provided with an epitaxial layer which is to be the collector region of the bipolar transistor in the memory cell portion which is thinner and has higher impurity density than the epitaxial layer which is to be the collector region of a bipolar transistor in the peripheral circuit.

Abstract: A top coating composition comprising(A) a polyol resin having a weight average molecular weight of 400 to 2,000 a ratio of weight average molecular weight (Mw) to number average molecular weight (Mn) of not more than 1.

Abstract: A magnetic head includes a core securely mounted on core support or coil connector. The coil connector is provided at one end with a hole in which the core is fitted for preventing the separation of the connector. An end of an insulating member is inserted between the coil and support for preventing short-circuiting of the coil by contact with the support.

Abstract: In a pigment dispersion comprising a pigment, a dispersing agent and an organic dispersing medium, the improvement wherein the dispersing agent is the reaction product of an amino resin, an alkyd resin or an acrylic resin with a silane coupling agent, or the reaction product of both an alkyd resin or an acrylic resin and an amino resin with a silane coupling agent.

Abstract: A photocurable composition comprising a copolymer of maleic acid monoester with .alpha.-olefine compound, a polymerizable ethylenically unsaturated compound having a number average molecular weight of less than 3,000 and a boiling point of more than 100.degree. C. at a normal pressure, and a photosensitizer.

Abstract: A photocurable composition comprising a copolymer of maleic acid monoester with .alpha.-olefine compound, a vinylurethane compound obtained by urethanation reaction of a polyisocyanate compound with a photopolymerizable ethylenically unsaturated alcohol having a number average molecular weight of less than 3,000 or by urethanation reaction of 1 mole of diisocyanate compound with about 1 mole of the photopolymerizable ethylenically unsaturated alcohol and about 1/m mole of m-valent alcohol (wherein m is an integer of 2 to 6) having a number average molecular weight of less than 3,000, and a photosensitizer.