Abstract: In an outer peripheral portion of a wafer, a circumferential variation in a microwave electric-field intensity is minimized, and circumferential uniformity of plasma processing is improved. A plasma processing apparatus includes a circular waveguide, a 90° phase difference plate for the microwaves is provided from above the inside of the circular waveguide, a 180° phase difference plate is provided below the 90° phase difference plate, a rotation drive mechanism is further connected to the 180° phase difference plate. a detector configured to detect a variation in an electric-field intensity in a circumferential direction is connected to a lower portion of the 180° phase difference plate, and a control unit configured to adjust a rotation angle of the 180° phase difference plate to minimize deterioration of axial symmetry of the electric-field intensity detected by the detector.

Abstract: In the present disclosure, in a plasma processing apparatus using ECR, information including parameters of a position and a shape of an ECR surface is used as an input value to a control device of the plasma processing apparatus. The ECR surface information that can be input to the control device from an input device of the plasma processing apparatus is limited by a discharge stability reference that is determined separately. When the discharge stability reference is satisfied, a plurality of coil current value candidates are extracted from a database including a correlation between a plurality of coil current values and the ECR surface shape information, and the plurality of coil current values to be input to a plurality of coils are determined from the plurality of coil current value candidates according to a coil current selection reference.

Abstract: A plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing, including, at an upper side therein, a dielectric plate, through which microwaves are transmitted; a radio frequency power supply which supplies radio frequency power for the microwaves; a cavity resonator which resonates microwaves transmitted from the radio frequency power supply through a waveguide and is placed above the dielectric plate; and a magnetic field forming mechanism which forms a magnetic field in the processing chamber. The plasma processing apparatus further includes: a ring-shaped conductor placed inside the cavity resonator; and a circular conductor which is placed inside the cavity resonator and placed in an opening at the center of the ring-shaped conductor.

Abstract: In a plasma processing apparatus including a plasma processing chamber disposed in a vacuum chamber, a sample stage disposed in the plasma processing chamber and on which a sample is placed, in the vacuum chamber, a second shower plate disposed above the sample stage, a first shower plate disposed above the second shower plate, and a dielectric window disposed above the first shower plate, first gas is supplied from a first gas supply unit to a space between the dielectric window and the first shower plate, and second gas is supplied from a second gas supply unit to a space between the first shower plate and the second shower plate.

Abstract: A plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing, including, at an upper side therein, a dielectric plate, through which microwaves are transmitted; a radio frequency power supply which supplies radio frequency power for the microwaves; a cavity resonator which resonates microwaves transmitted from the radio frequency power supply through a waveguide and is placed above the dielectric plate; and a magnetic field forming mechanism which forms a magnetic field in the processing chamber. The plasma processing apparatus further includes: a ring-shaped conductor placed inside the cavity resonator; and a circular conductor which is placed inside the cavity resonator and placed in an opening at the center of the ring-shaped conductor.

Abstract: In a plasma processing apparatus including a processing chamber disposed in a vacuum chamber, a sample stage disposed in the processing chamber and on which a sample is placed, in the vacuum chamber, a second shower plate disposed above the sample stage, a first shower plate disposed above the second shower plate, and a dielectric window disposed above the first shower plate, first gas is supplied from a first gas supply unit to a space between the dielectric window and the first shower plate, and second gas is supplied from a second gas supply unit to a space between the first shower plate and the second shower plate.

Abstract: A plasma processor, including a first gas supplier to supply first gas to the inside of a vacuum vessel, a stage on which a wafer is placed, an electromagnetic wave supplier to supply electromagnetic waves for generating first plasma, a susceptor provided to an outer peripheral portion of the stage, a second high frequency power source connected to the susceptor, and a second gas supplier to supply second gas to the inside of the susceptor. The inside of the susceptor is provided with a high frequency electrode connected to the second high frequency power source and a first earth electrode disposed opposite to the high frequency electrode. The second high frequency power source supplies high frequency power while the second gas supplier supplies the second gas, thereby generating second plasma inside the susceptor.

Abstract: A plasma processor, including a first gas supplier to supply first gas to the inside of a vacuum vessel, a stage on which a wafer is placed, an electromagnetic wave supplier to supply electromagnetic waves for generating first plasma, a susceptor provided to an outer peripheral portion of the stage, a second high frequency power source connected to the susceptor, and a second gas supplier to supply second gas to the inside of the susceptor. The inside of the susceptor is provided with a high frequency electrode connected to the second high frequency power source and a first earth electrode disposed opposite to the high frequency electrode. The second high frequency power source supplies high frequency power while the second gas supplier supplies the second gas, thereby generating second plasma inside the susceptor.

Abstract: A sterilization device includes: a charged fine water droplet supplying unit; and a plasma generating unit, wherein the charged fine water droplet supplying unit and the plasma generating unit are provided on a wall surface of a wind channel in order of the charged fine water droplet supplying unit and the plasma generating unit from an upper stream in a direction in which air flows, the plasma generating unit includes a charged fine water droplet supplying part and a plasma generator, the charged fine water droplet supplying part includes a high-voltage power supply, an earthed electrode, and an electrode to which moisture is supplied by a water feeding unit, a negative high voltage with respect to the earthed electrode being applied to the electrode supplied with moisture, the plasma generator includes a pair of plasma generating electrodes and a high-frequency power supply, the plasma generating electrodes being covered by a dielectric substance and being provided in the same plane with the dielectric subs