Abstract: A semiconductor device manufacturing method comprises a step of forming a trench to a first insulation film formed on a semiconductor substrate, and forming a lower level wiring in the trench, a step of forming at least one conductive layer on the semiconductor substrate to coat the lower level wiring, a step of forming at least one thin film layer on the conductive layer, a step of forming a hard mask by patterning the thin film, a step of etching the conductive layer by using the hard mask as an etching mask, and forming a conductive pillar-shaped structure, whose upper surface is covered with the hard mask, on the lower level wiring, a step of forming a second insulation film on the semiconductor substrate so that the pillar-shaped structure is buried, a step of forming a wiring trench in which at least the hard mask is exposed, and a step of burying a conductor into the wiring trench after the hard mask is removed, and forming an upper level wiring in the wiring trench.

Abstract: A method of manufacturing a semiconductor device, which comprises the steps of forming an intermediate layer on an insulating layer, forming a groove in the intermediate layer and the insulating layer, forming a first barrier layer on the intermediate layer, depositing a wiring layer on the first barrier layer to thereby fill the groove with the wiring layer, performing a flattening treatment of the wiring layer, removing a surface portion of the wiring to thereby permit the surface of the wiring to be recessed lower than a surface of the insulating layer, thus forming a recessed portion, forming a second barrier layer on the intermediate layer and on an inner wall of the recessed portion, performing a flattening treatment of the second barrier layer, thereby, and selectively removing the intermediate layer, exposing the insulating layer.

Abstract: A method of manufacturing a semiconductor device comprising the steps of forming a dummy film and a dummy gate pattern at a predetermined gate-forming region on a semiconductor substrate, forming a first side wall insulating film on a side wall of the dummy gate pattern, forming an interlayer insulating film on a position of the semiconductor substrate around the dummy gate pattern bearing the first side wall insulating film, forming a groove by removing the dummy gate pattern, removing a portion of dummy film exposed through the groove while leaving a portion of the first side wall insulating film as well as a portion of the dummy film disposed below the portion of the first side wall insulating film, forming a gate insulating film at least on a bottom surface of the groove, and forming a gate electrode on the gate insulating film formed in the groove.

Abstract: A semiconductor device comprises a base layer, a barrier metal layer formed on the base layer and a metal interconnect formed on the barrier metal layer, the barrier metal layer being made of at least one element &agr; selected from metal elements and at least one element &bgr; selected from a group of boron, oxygen, carbon and nitrogen and having at least two compound films &agr;&bgr;n with different compositional ratios in atomic level arranged to form a laminate. When the elements &agr; contained in the compound films &agr;&bgr;n are same and identical and at least one of the at least two compound films &agr;&bgr;n is a compound film &agr;&bgr;x (x>1), the via resistance and the interconnect resistance of the device can be reduced, while maintaining the high barrier effect.

Abstract: A liquid material jetted from a nozzle is supplied onto a surface of the semiconductor substrate with use of an ink-jet mechanism comprising a liquid material receiving section, a driving section and a nozzle section. Since a film material (liquid material) is supplied by an ink-jet method, not only the film material only be supplied to a desired region of the semiconductor substrate surface and a supply to an unnecessary region is prevented, but also a variation of a film thickness comes not to be dependent on a pattern on the semiconductor substrate. Therefore, in forming a thin film on a semiconductor substrate, a thin film formation is realized so that utilization efficiency of a film material is increased with reduction in loss thereof and a variation of a thickness of the film formed is not influenced by a pattern on the semiconductor substrate.

Abstract: A method comprises forming a barrier layer for copper metallization, selectively forming a silicon film on a surface of copper wiring formed on the main surface of a semiconductor substrate, and reacting the silicon film with a non-copper metal and/or nitrogen to form a barrier layer in a self-aligned manner relative to the copper wiring. In the method, the capacitance increase in the copper wirings formed is prevented, and the barrier layer formed has a satisfactory barrier property of protecting the copper wirings.

Abstract: A fabrication process includes a step of providing a substrate to be fabricated. A multi-layer antireflective layer is then formed on the substrate. A patterned resist having a thickness less than 850 nanometers is formed on the multi-layer antireflective layer and the substrate is fabricated using the patterned resist as a mask.

Abstract: The present invention is directed to the prevention of a decrease in the resolution of a film shifter-type alternating phase shifting mask, and the complexity of the mask forming step, and discusses the structure of a novel alternating phase shifting mask, and a novel manufacturing method which does not require the etching for forming a shifter. To achieve this object, hydrogen silsesquioxane (flowable oxide (FOX)) is used as the material for the phase shifter. The optical characteristics of this film are very close to those of a quartz substrate, and the property that the in-surface variation (.+-.3 .sigma.) of the thickness is 1% or less, is close to that of SOG (Spin On Glass). The most advantageous aspect of the FOX being used for the mask manufacturing process is that, since the FOX film is etched at the same time as the resist development, with the alkaline developing solution used for etching the resist, there is no need to provide a particular step for etching the shifter.

Abstract: A fabrication process includes a step of providing a substrate to be fabricated. A multi-layer antireflective layer is then formed on the substrate. A patterned resist having a thickness less than 850 nanometers is formed on the multi-layer antireflective layer and the substrate is fabricated using the patterned resist as a mask.

Abstract: The present invention relates to a simple, low cost planarization technique whereby physical pressure is used to planarize the surface of a semiconductor device. The method of the present invention planarizes a semiconductor workpiece surface and results in an increase in the productivity of the processing steps that follow. In effect, the present invention applies physical pressure to flatten the surface layers of a semiconductor workpiece. The present invention is particularly adapted for use in planarizing surface layers made of plastic materials.

Abstract: According to a thin film forming method, at least one type of gas is activated to produce a plurality of species having positive or negative charges. The plurality of species pass through an electric field or magnetic field to extract specific species. The specific species are supplied to a substrate surface. Thereafter, the specific species are chemically reacted with each other to form a thin film. This extraction is performed using a difference in track corresponding to a ratio of mass to charge of the species passing through the electric field.

Abstract: Fluorine-doped oxide is formed that is resistant to water absorption by the use of two sources of silicon, one being the fluorine precursor and the other being available to react with excess fluorine from the fluorine precursor, thereby reducing the number of fluorine radicals in the layer; the fluorine precursor containing a glass-forming element that combines with the other glass constituents to carry into the gas a diatomic radical containing one atom of fluorine and one atom of the glass-forming element.

Abstract: An organic silane compound gas and an oxidizing gas are introduced into a reaction vessel from each gas source. Further a gas containing at least one kind of halogen, for example carbon tetrafluoride, is decomposed into halogen radicals, etc., by microwave discharge, and introduced into the reaction vessel. Reaction occurs between the gases, resulting in silicon oxide films being formed on substrates in the reaction vessel.

Abstract: In a CVD apparatus, an epitaxial apparatus or an etching apparatus, the processing conditions are made uniform in a batch process by changing, with time, positions which are disposed in the direction of a gas flow in a reaction vessel and at which the optimal surface processing conditions are attained. By doing so, homogeneous and uniform films can be formed with a large substrate processing apparatus.

Abstract: An improved method of manufacturing a semiconductor device wherein an insulating film, a conducting film, a first film to prevent conducting and refractory metal films from the reaction and a refractory metal film are sequentially deposited on a semiconductor substrate. Further, a second film is formed on the surface of the refractory metal film to prevent the exposed surface of the refractory metal film from the oxidization. Tungsten, molybdenum or the like is used as a refractory metal. A nitride film, a carbide film, or a silicide film of tungsten or molybdenum may be advantageously used as the second film.

Abstract: According to a thin film forming method, at least one type of gas is activated to produce a plurality of species having positive or negative charges. The plurality of species pass through an electric field or magnetic field to extract specific species. The specific species are supplied to a substrate surface. Thereafter, the specific species are chemically reacted with each other to form a thin film. This extraction is performed using a difference in track corresponding to a ratio of mass to charge of the species passing through the electric field.

Abstract: A method for the formation of a thin, high melting-point metal film such as W, on a substrate surface, by means of CVD, is disclosed herein. In this method, the inner wall of the CVD reaction tube and the surface of the at least part of the fittings disposed therewithin are covered with a metal nitride film, in the process of performing the CVD operation. The method permits the formation of a high quality film, and also prevents the deposition of the high melting-point metal on the inner wall of the reaction chamber, even if the CVD operation is repeatedly performed over a long period of time.

Abstract: A method of manufacturing a semiconductor device includes the steps of (a) forming a first conductive pattern on a semiconductor substrate, (b) forming a first interlayer insulating film, covering the first conductive pattern, (c) forming a second conductive pattern, composed of a refractory metal, on the first interlayer insulating film, (d) forming a contact hole reaching the first conductive pattern through the second conductive pattern and the first interlayer insulating film at a predetermined position, (e) performing an annealing step before or after formation of the contact hole in step (d), and (f) covering in the contact hole with a metal film, after annealing step (e), to connect the second conductive pattern to the first conductive pattern. In this method, annealing step--for example, gettering--is performed before the wiring layer of the refractory metal is placed in contact with the semiconductor layer.

Abstract: Tetrazolylcoumarin derivatives of the general formula: ##STR1## wherein R is hydrogen atom, an alkyl group, an alkenyl group, an alkoxyalkyl group or phenyl group, n is an integer of 2 to 4, and the R--O--(CH.sub.2).sub.n --O-- group is substituted at any of the 5, 6, 7 and 8 positions of the coumarin ring, and the salts thereof. The compounds are useful as antiallergic agents for preventing and treating allergic diseases.

Abstract: Deformyltylosin derivatives of the formula ##STR1## wherein A is ##STR2## --CH.dbd.CH-- or --CH.sub.2 --CH.sub.2 --, R.sub.1 is hydrogen, lower alkanoyl or aryl-lower alkanoyl, X.sub.1 and X.sub.2 are hydrogen or are connected to form a valence bond, Y.sub.1 and Y.sub.2 are hydrogen or are connected to form a valence bond, Q.sub.1 is hydrogen or methyl, Q.sub.2 is hydrogen or ##STR3## R.sub.2 is hydrogen or lower alkanoyl, R is hydrogen or ##STR4## R.sub.3 is hydrogen or C.sub.2-5 alkanoyl, and R.sub.4 is hydrogen or C.sub.2-6 alkanoyl, and when R.sub.3 is not hydrogen, then R.sub.4 is not hydrogen, or a pharmaceutically acceptable salt thereof, have strong antibacterial activities as compared to the known antibiotic tylosin, and also have enhanced antibacterial activities against all macrolide antibiotic-resistant strains such as A, B and C group strains, and have higher blood levels as compared with tylosin.