Patents by Inventor Tetsuo Mizuguchi

Tetsuo Mizuguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050157545
    Abstract: In a magnetoresistive element which includes at least a pair of ferromagnetic layers stacked with having an intermediate layer inbetween and achieves a change in the magnetic resistance by permitting a current to flow in the direction which crosses the plane of the stacked layers, by virtue of having a construction wherein at least one ferromagnetic layer constituting an information recording layer has an amorphous structure containing a CoFeB or CoFeNiB alloy and has a plane form having a longer axis in one direction wherein both sides thereof along the longer axis direction form a straight line or a curved outward, and the both ends thereof in the longer axis direction form a curved or bent outward from, wherein the pattern form has an aspect ratio of 1:1.2 to 1:3.5, excellent asteroid curve having consistency in the properties can be stably obtained.
    Type: Application
    Filed: March 11, 2005
    Publication date: July 21, 2005
    Inventors: Masanori Hosomi, Kazuhiro Bessho, Kazuhiro Ohba, Tetsuo Mizuguchi, Yutaka Higo, Takeyuki Sone, Tetsuya Yamamoto, Hiroshi Kano
  • Patent number: 6879514
    Abstract: In a magnetoresistive element which includes at least a pair of ferromagnetic layers stacked with having an intermediate layer inbetween and achieves a change in the magnetic resistance by permitting a current to flow in the direction which crosses the plane of the stacked layers, by virtue of having a construction wherein at least one ferromagnetic layer constituting an information recording layer has an amorphous structure containing a CoFeB or CoFeNiB alloy and has a plane form having a longer axis in one direction wherein both sides thereof along the longer axis direction form a straight line or a curved outward, and the both ends thereof in the longer axis direction form a curved or bent outward from, wherein the pattern form has an aspect ratio of 1:1.2 to 1:3.5, excellent asteroid curve having consistency in the properties can be stably obtained.
    Type: Grant
    Filed: September 26, 2003
    Date of Patent: April 12, 2005
    Assignee: Sony Corporation
    Inventors: Masanori Hosomi, Kazuhiro Bessho, Kazuhiro Ohba, Tetsuo Mizuguchi, Yutaka Higo, Takeyuki Sone, Tetsuya Yamamoto, Hiroshi Kano
  • Publication number: 20040136232
    Abstract: In a magnetoresistive element which includes at least a pair of ferromagnetic layers stacked with having an intermediate layer in between and achieves a change in the magnetic resistance by permitting a current to flow in the direction which crosses the plane of the stacked layers, by virtue of having a construction wherein at least one ferromagnetic layer constituting an information recording layer has an amorphous structure containing a CoFeB or CoFeNiB alloy and has a plane form having a longer axis in one direction wherein both sides thereof along the longer axis direction form a straight line or a curved outward, and the both ends thereof in the longer axis direction form a curved or bent outward from, wherein the pattern form has an aspect ratio of 1:1.2 to 1:3.5, excellent asteroid curve having consistency in the properties can be stably obtained.
    Type: Application
    Filed: September 26, 2003
    Publication date: July 15, 2004
    Inventors: Masanori Hosomi, Kazuhiro Bessho, Kazuhiro Ohba, Tetsuo Mizuguchi, Yutaka Higo, Takeyuki Sone, Tetsuya Yamamoto, Hiroshi Kano