Patents by Inventor Tetsuo Okayasu

Tetsuo Okayasu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10268117
    Abstract: [Object] To provide compositions for forming a top coat layer capable of forming patterns with an excellent roughness and pattern shape in a pattern formation method by exposure to extreme ultraviolet rays, and a pattern formation method using the composition. [Means for solving problem] Provided are compositions for forming a top coat layer comprises an aromatic compound having an aromatic hydroxyl group and an aqueous solvent; and a method of forming patterns by applying the composition onto the resist surface and subjecting the resultant to exposure and development. This composition can further comprise binders.
    Type: Grant
    Filed: May 19, 2015
    Date of Patent: April 23, 2019
    Assignee: AZ Electronic Materials (Luxembourg) S.a.r.l.
    Inventors: Masato Suzuki, Xiaowei Wang, Tetsuo Okayasu, Yusuke Hama, Georg Pawlowski
  • Patent number: 9810988
    Abstract: The objective of this invention is to provide a composition for forming a topcoat layer enabling to produce a pattern excellent in roughness and in pattern shape; and also to provide a pattern formation method employing that composition is described. The means for solving this objective is a composition for forming a topcoat layer, comprising a solvent and a fullerene derivative having a hydrophilic group; and also a method of forming a pattern by casting the above composition on a resist surface and then by subjecting it to exposure and development.
    Type: Grant
    Filed: December 12, 2013
    Date of Patent: November 7, 2017
    Assignee: AZ Electronic Material (Luxembourg) S.ár.l.
    Inventors: Xiaowei Wang, Masato Suzuki, Tetsuo Okayasu, Georg Pawlowski
  • Patent number: 9804493
    Abstract: Provided is a composition for forming a topcoat layer, the composition including a graphene derivative including a hydrophilic group; and a solvent. Also provided is a pattern formation method, including disposing a resist composition on a substrate, to form a resist layer; coating the resist layer with a composition including a graphene derivative including a hydrophilic group, and a solvent; heating the composition to harden the composition; subjecting the resist layer to exposure using extreme ultraviolet light; and developing exposed resist layer with an alkali aqueous solution.
    Type: Grant
    Filed: November 21, 2014
    Date of Patent: October 31, 2017
    Assignees: Samsung Electronics Co., LTD., AZ Electronics Materials (Luxembourg) S.A.R.L.
    Inventors: Hyun-woo Kim, Cheol hong Park, Tetsuo Okayasu, Xiaowei Wang, Georg Pawlowski, Yusuke Hama
  • Patent number: 9766544
    Abstract: Provided is a composition for forming a topcoat layer, the composition including a graphene derivative including a hydrophilic group; and a solvent. Also provided is a pattern formation method, including disposing a resist composition on a substrate, to form a resist layer; coating the resist layer with a composition including a graphene derivative including a hydrophilic group, and a solvent; heating the composition to harden the composition; subjecting the resist layer to exposure using extreme ultraviolet light; and developing exposed resist layer with an alkali aqueous solution.
    Type: Grant
    Filed: November 21, 2014
    Date of Patent: September 19, 2017
    Assignees: Samsung Electronics Co., LTD., AZ Electronics Materials (Luxembourg) S.A.R.L.
    Inventors: Hyun-woo Kim, Cheol hong Park, Tetsuo Okayasu, Xiaowei Wang, Georg Pawlowski, Yusuke Hama
  • Publication number: 20170090288
    Abstract: [Object] To provide compositions for forming a top coat layer capable of forming patterns with an excellent roughness and pattern shape in a pattern formation method by exposure to extreme ultraviolet rays, and a pattern formation method using the composition. [Means for solving problem] Provided are compositions for forming a top coat layer comprises an aromatic compound having an aromatic hydroxyl group and an aqueous solvent; and a method of forming patterns by applying the composition onto the resist surface and subjecting the resultant to exposure and development. This composition can further comprise binders.
    Type: Application
    Filed: May 19, 2015
    Publication date: March 30, 2017
    Inventors: Masato SUZUKI, Xiaowei WANG, Tetsuo OKAYASU, Yusuke HAMA, Georg PAWLOWSKI
  • Publication number: 20160327867
    Abstract: [Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition. [Means to solve the problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C): and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.
    Type: Application
    Filed: July 21, 2016
    Publication date: November 10, 2016
    Inventors: Tetsuo OKAYASU, Takashi SEKITO, Masahiro ISHII
  • Patent number: 9482952
    Abstract: To provide a composition for forming a topcoat layer enabling to produce a pattern excellent in roughness and in pattern shape, and also to provide a pattern formation method employing that. A composition for forming a topcoat layer, containing a solvent and a triphenylene derivative having a hydrophilic group; and also a method of forming a pattern by casting the above composition on a resist surface and then by subjecting it to exposure and development. The composition may further contain a polymer.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: November 1, 2016
    Assignee: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
    Inventors: Xiaowei Wang, Tetsuo Okayasu, Georg Pawlowski, Takafumi Kinuta
  • Patent number: 9448485
    Abstract: [Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition. [Means to Solve the Problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C): and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.
    Type: Grant
    Filed: October 10, 2012
    Date of Patent: September 20, 2016
    Assignee: MERCK PATENT GMBH
    Inventors: Tetsuo Okayasu, Takashi Sekito, Masahiro Ishii
  • Publication number: 20160011510
    Abstract: [Object] To provide a composition for forming a topcoat layer enabling to produce a pattern excellent in roughness and in pattern shape, and also to provide a pattern formation method employing that. [Means for solving] A composition for forming a topcoat layer, containing a solvent and a triphenylene derivative having a hydrophilic group; and also a method of forming a pattern by casting the above composition on a resist surface and then by subjecting it to exposure and development. The composition may further contain a polymer.
    Type: Application
    Filed: March 14, 2014
    Publication date: January 14, 2016
    Inventors: Xiaowei WANG, Tetsuo OKAYASU, Georg PAWLOWSKI, Takafumi KINUTA
  • Publication number: 20150331323
    Abstract: [Object] To provide a composition for forming a topcoat layer enabling to produce a pattern excellent in roughness and in pattern shape; and also to provide a pattern formation method employing that. [Means for solving] A composition for forming a topcoat layer, comprising a solvent and a fullerene derivative having a hydrophilic group; and also a method of forming a pattern by casting the above composition on a resist surface and then by subjecting it to exposure and development.
    Type: Application
    Filed: December 12, 2013
    Publication date: November 19, 2015
    Inventors: Xiaowei WANG, Masato SUZUKI, Tetsuo OKAYASU, Georg PAWLOWSKI
  • Publication number: 20150147701
    Abstract: Provided is a composition for forming a topcoat layer, the composition including a graphene derivative including a hydrophilic group; and a solvent. Also provided is a pattern formation method, including disposing a resist composition on a substrate, to form a resist layer; coating the resist layer with a composition including a graphene derivative including a hydrophilic group, and a solvent; heating the composition to harden the composition; subjecting the resist layer to exposure using extreme ultraviolet light; and developing exposed resist layer with an alkali aqueous solution.
    Type: Application
    Filed: November 21, 2014
    Publication date: May 28, 2015
    Inventors: Hyun-woo KIM, Cheol hong PARK, Tetsuo OKAYASU, Xiaowei WANG, Georg PAWLOWSKI, Yusuke HAMA
  • Publication number: 20150017587
    Abstract: [Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition. [Means to Solve the Problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C): and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.
    Type: Application
    Filed: October 10, 2012
    Publication date: January 15, 2015
    Applicant: AZ ELECTRONIC MATERIALS USA CORP.
    Inventors: Tetsuo Okayasu, Takashi Sekito, Mashiro Ishii
  • Publication number: 20100324330
    Abstract: The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed.
    Type: Application
    Filed: August 10, 2010
    Publication date: December 23, 2010
    Inventors: Yasushi Akiyama, Yusuke Takano, Kiyohisa Takahashi, Sung-Eun Hong, Tetsuo Okayasu
  • Patent number: 7799513
    Abstract: The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed.
    Type: Grant
    Filed: June 10, 2003
    Date of Patent: September 21, 2010
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Yasushi Akiyama, Yusuke Takano, Kiyohisa Takahashi, Sung-Eun Hong, Tetsuo Okayasu
  • Patent number: 7745093
    Abstract: In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.
    Type: Grant
    Filed: April 8, 2005
    Date of Patent: June 29, 2010
    Inventors: Takeshi Nishibe, Sung Eun Hong, Yusuke Takano, Tetsuo Okayasu
  • Publication number: 20080193880
    Abstract: In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.
    Type: Application
    Filed: April 8, 2005
    Publication date: August 14, 2008
    Inventors: Takeshi Nishibe, Sung Eun Hong, Yusuke Takano, Tetsuo Okayasu
  • Publication number: 20050221236
    Abstract: The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed.
    Type: Application
    Filed: June 10, 2003
    Publication date: October 6, 2005
    Inventors: Yasushi Akiyama, Yusuke Takano, Kiyohisa Takahashi, Sung-Eun Hong, Tetsuo Okayasu