Abstract: A range imaging device includes a light source unit that emits light pulses to an object, a light-receiving unit including pixel circuits each including a photoelectric conversion element that generates charge according to incident light and charge storage units that integrates the charge, a pixel drive circuit that distributes the charge to the charge storage units for integration therein, and a charge discharge unit that discharges the charge, and a distance calculation unit that calculates a distance to the object. The light pulses include structured light including patterns of dot light, and at least one first pattern of dot light among the patterns of dot light has an elliptical shape in which a ratio of a major axis length to a minor axis length is a threshold or more.

Abstract: One embodiment of the present invention is an organic electroluminescence element defect inspection apparatus wherein the apparatus brings in an optical image of a substrate to be inspected and detects a pattern defect of an organic luminescent layer on the substrate to be inspected. The above is performed after an organic luminescent layer is formed on a substrate in a method of manufacturing an organic electroluminescence element. The organic electroluminescence element includes at least one or more organic luminescent layers having a luminescence area, an anode which injects a hole into the organic luminescent layer and a cathode which injects an electrode into the organic luminescent layer on a substrate. And an optical source for obtaining an optical image from a substrate to be inspected is infra-red radiation.

Abstract: The present invention provides an organic EL element on which a protective film, which can be thickened and has a high barrier property, can be formed with high productivity, and a method of manufacturing the same. An organic electroluminescence element having a substrate 1, a first electrode 2 provided thereon, an organic luminescent layer 3, a second electrode 4, and a protective film 5 in this order, wherein the protective film 5 is formed with carbon-containing silicon nitride (SiNxCy), and the carbon content in the protective film 5 is continuously altered. The protective film of the element is formed by using an organic silicon compound, and nitrogen and hydrogen as a source gas, with a plasma CVD method while altering the voltage.

Abstract: One embodiment of an organic electroluminescent element of present invention includes a substrate, a first electrode on the substrate, an organic luminescent medium layer including an organic luminescent layer on the first electrode, a second electrode on the organic luminescent medium layer and barrier film formed on the second electrode. The organic luminescent medium layer is sandwiched between the first electrode and the second electrode. Film density of the barrier film changes in thickness direction.

Abstract: One embodiment of the present invention is an organic electroluminescence element defect inspection apparatus wherein the apparatus brings in an optical image of a substrate to be inspected and detects a pattern defect of an organic luminescent layer on the substrate to be inspected. The above is performed after an organic luminescent layer is formed on a substrate in a method of manufacturing an organic electroluminescence element. The organic electroluminescence element includes at least one or more organic luminescent layers having a luminescence area, an anode which injects a hole into the organic luminescent layer and a cathode which injects an electrode into the organic luminescent layer on a substrate. And an optical source for obtaining an optical image from a substrate to be inspected is infra-red radiation.

Abstract: The present invention provides an organic EL element on which a protective film, which can be thickened and has a high barrier property, can be formed with high productivity, and a method of manufacturing the same. An organic electroluminescence element having a substrate 1, a first electrode 2 provided thereon, an organic luminescent layer 3, a second electrode 4, and a protective film 5 in this order, wherein the protective film 5 is formed with carbon-containing silicon nitride (SiNxCy), and the carbon content in the protective film 5 is continuously altered. The protective film of the element is formed by using an organic silicon compound, and nitrogen and hydrogen as a source gas, with a plasma CVD method while altering the voltage.

Abstract: One embodiment of an organic electroluminescent element of present invention includes a substrate, a first electrode on the substrate, an organic luminescent medium layer including an organic luminescent layer on the first electrode, a second electrode on the organic luminescent medium layer and barrier film formed on the second electrode. The organic luminescent medium layer is sandwiched between the first electrode and the second electrode. Film density of the barrier film changes in thickness direction.