Abstract: A gas barrier film includes a substrate containing polypropylene or polyethylene as a main ingredient, the substrate having a first surface and a second surface opposite the first surface; and a gas barrier layer arranged to face the first surface of the substrate. The second surface of the substrate has a wetting tension of 21 mN/m or more.

Abstract: A solid-state imaging device according to the present disclosure includes: a pixel region which includes: pixel plugs formed above and electrically connected to a charge accumulation and diffusion layer, the pixel plugs respectively corresponding to pixels; lower pixel electrodes formed on and electrically connected to the pixel plugs, respectively, the lower pixel electrodes respectively corresponding to the pixels; an organic photoelectric conversion film formed on and electrically connected to the lower pixel electrodes; and an upper pixel electrode formed on and electrically connected to the organic photoelectric conversion film, and in which top surfaces of a global interconnect, a light shielding film, and a first AI pad formed in an uppermost layer of a multilayer interconnect structure disposed in a peripheral region is above a bottom surface of the organic photoelectric conversion film, the peripheral region being peripheral to the pixel region.

Abstract: A solid-state imaging device according to the present disclosure includes: a pixel region which includes: pixel plugs formed above and electrically connected to a charge accumulation and diffusion layer, the pixel plugs respectively corresponding to pixels; lower pixel electrodes formed on and electrically connected to the pixel plugs, respectively, the lower pixel electrodes respectively corresponding to the pixels; an organic photoelectric conversion film formed on and electrically connected to the lower pixel electrodes; and an upper pixel electrode formed on and electrically connected to the organic photoelectric conversion film, and in which top surfaces of a global interconnect, a light shielding film, and a first AI pad formed in an uppermost layer of a multilayer interconnect structure disposed in a peripheral region is above a bottom surface of the organic photoelectric conversion film, the peripheral region being peripheral to the pixel region.

Abstract: A hole is formed in an insulating film containing silicon and carbon. The insulating film has a density or a carbon concentration varying gradually in the direction of the thickness thereof.

Abstract: After a hole is formed in a low dielectric constant film on a substrate, a protective film is formed on the wall surface of the hole or an electron acceptor is caused to be adsorbed by or implanted in the low dielectric constant film exposed at the wall surface of the hole. Otherwise, resist residue is left on the wall surface of the hole. Then, a resist pattern having an opening corresponding to a wire formation region including a region formed with the hole is formed by using a chemically amplified resist.

Abstract: A hole is formed in an insulating film containing silicon and carbon. The insulating film has a density or a carbon concentration varying gradually in the direction of the thickness thereof.

Abstract: A hole is formed in an insulating film containing silicon and carbon. The insulating film has a density or a carbon concentration varying gradually in the direction of the thickness thereof.

Abstract: A hole is formed in an insulating film containing silicon and carbon. The insulating film has a density or a carbon concentration varying gradually in the direction of the thickness thereof.

Abstract: After a hole is formed in a low dielectric constant film on a substrate, a protective film is formed on the wall surface of the hole or an electron acceptor is caused to be adsorbed by or implanted in the low dielectric constant film exposed at the wall surface of the hole. Otherwise, resist residue is left on the wall surface of the hole. Then, a resist pattern having an opening corresponding to a wire formation region including a region formed with the hole is formed by using a chemically amplified resist.

Abstract: In the magnetic recording medium, the non-magnetic substrate has an under-coat layer including the first flake powder of non-magnetic material on its surface and further has a back-coat film including the second flake powder of non-magnetic material on the opposite face on the non-magnetic substrate to the one face coated by the magnetic film; thereby splendid property of running durability and electromagnetic transducing characteristics is achieved in spite of thinning the total thickness of the magnetic recording medium.

Abstract: A magnetic field orientation for producing a magnetic recording medium is made by using plural moving magnet which are driven in a direction parallel to the running direction of a nonmagnetic base film having a magnetic layer thereon; thus the time period during which the magnetic particles in the magnetic paint coated on the nonmagnetic base receive orientation can be varied independent from coating velocity.