Abstract: A plasma processing method for forming a silicon nitride film on a silicon oxide film, the method including preparing a substrate on which the silicon oxide film is formed; generating plasma by supplying a nitrogen gas onto the silicon oxide film; and nitride-processing the silicon oxide film by the plasma so as to modify an upper portion of the silicon oxide film into the silicon nitride film.

Abstract: In a wafer transfer system wherein a wafer transfer robot linearly reciprocates by a linear motor, dust is prevented from adhering to a wafer. A fixed base 9, on which the secondary side 11 of a linear motor M for linearly reciprocating a wafer transfer robot R is mounted, is mounted on the system body 1 of a wafer transfer system A in lateral directions and in vertical directions, so that dust dropping in accordance with the flow of clean air K from a clean air supply system 4 is directly sucked into an exhaust fan 5, which is provided on the bottom portion 1c of the system body 1, to be exhausted without being deposited on the top face of the fixed base 9 and the secondary side 11.

Abstract: A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.

Abstract: A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.

Abstract: A plasma processing apparatus includes a process chamber having a ceiling with an opening, a supporting frame member placed along the periphery of the ceiling and including a ring-shaped supporting shelf protruding toward the center of the process chamber, and an insulating plate having its peripheral portion supported by the supporting shelf of the supporting frame member and airtightly covering the opening of the ceiling of the process chamber. The plasma processing apparatus is characterized in that the supporting shelf has an inner periphery which includes a corner portion shaped into a curve.

Abstract: A plasma processing apparatus includes a process chamber, an insulating plate airtightly attached to the ceiling of the process chamber, a mount base placed in the process chamber for mounting thereon a workpiece to be processed, a planar antenna member placed above the insulating plate and including a microwave radiation hole for transmitting therethrough microwave used for generating plasma, the microwave transmitted through the insulating plate into the process chamber, and a wave-delay member placed above the planar antenna member for reducing the wavelength of microwave. The insulating plate has its peripheral end formed into an uneven shape with depressions and protrusions for causing, reflected waves of the microwave propagated through the insulating plate from the center and in the radial direction of the insulating plate, to cancel out each other.

Abstract: A plasma processing apparatus includes, in order to enhance the planar uniformity of the plasma density in a process space, a process chamber, an insulating plate attached airtightly to the ceiling of the process chamber, a planar antenna member placed above the insulating plate and including microwave radiation holes for transmitting therethrough microwave used for generating plasma, and a shield electrode member placed between the insulating plate and the planar antenna member for blocking out radiation of the microwave from the center and a part therearound of the planar antenna member.

Abstract: The invention is a method for positioning a conveying mechanism having a holding portion for semiconductor wafers. Respective provisional position coordinates of an orienting teaching standard position and a container teaching standard positions are inputted into a controlling unit in advance. A wafer to be conveyed precisely positioned with respect to and held by the holding portion is conveyed and placed on the rotating orienting device according a control based on the provisional coordinates of the orienting teaching standard position. A posture detector then detects the eccentric volume and eccentric direction of the wafer. Appropriate position coordinates are made by amending the provisional coordinates. Then, a wafer to be conveyed precisely positioned with respect to the container teaching standard position is conveyed and placed on the rotating orienting device according a control based on the provisional coordinates of the orienting teaching standard position.

Abstract: A plasma processing apparatus includes a process chamber, an insulating plate airtightly attached to the ceiling of the process chamber, a mount base placed in the process chamber for mounting thereon a workpiece to be processed, a planar antenna member placed above the insulating plate and including a microwave radiation hole for transmitting therethrough microwave used for generating plasma, the microwave transmitted through the insulating plate into the process chamber, and a wave-delay member placed above the planar antenna member for reducing the wavelength of microwave. The insulating plate has its peripheral end formed into an uneven shape with depressions and protrusions for causing, reflected waves of the microwave propagated through the insulating plate from the center and in the radial direction of the insulating plate, to cancel out each other.

Abstract: A plasma processing apparatus includes a process chamber having a ceiling with an opening, a supporting frame member placed along the periphery of the ceiling and including a ring-shaped supporting shelf protruding toward the center of the process chamber, and an insulating plate having its peripheral portion supported by the supporting shelf of the supporting frame member and airtightly covering the opening of the ceiling of the process chamber. The plasma processing apparatus is characterized in that the supporting shelf has an inner periphery which includes a corner portion shaped into a curve.

Abstract: A plasma processing apparatus includes, in order to enhance the planar uniformity of the plasma density in a process space, a process chamber, an insulating plate attached airtightly to the ceiling of the process chamber, a planar antenna member placed above the insulating plate and including microwave radiation holes for transmitting therethrough microwave used for generating plasma, and a shield electrode member placed between the insulating plate and the planar antenna member for blocking out radiation of the microwave from the center and a part therearound of the planar antenna member.

Abstract: A plasma processing apparatus applies a high-quality process to an object to be processed by preventing impurities from being generated due to a microwave transmitting through a dielectric plate. The dielectric plate is provided between a process chamber of a plasma processing apparatus and a slot electrode guiding a microwave used for a plasma process. A thickness H of the dielectric plate has a predetermined relationship with a wavelength &lgr; of the microwave in the dielectric plate so that an amount of isolation of the dielectric plate due to transmission of the microwave is minimized. The wavelength &lgr; is represented by &lgr;=&lgr;0n, where &lgr;0 is a wavelength of the microwave in a vacuum and n is a wavelength reducing rate of the dielectric plate represented by n=1/(&egr;t)½, where &egr;t is a specific dielectric rate of the dielectric plate in a vacuum.

Abstract: A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.

Abstract: A plasma processing apparatus applies a high-quality process to an object to be processed by preventing impurities from being generated due to a microwave transmitting through a dielectric plate. The dielectric plate is provided between a process chamber of a plasma processing apparatus and a slot electrode guiding a microwave used for a plasma process. A thickness H of the dielectric plate has a predetermined relationship with a wavelength &lgr; of the microwave in the dielectric plate so that an amount of isolation of the dielectric plate due to transmission of the microwave is minimized. The wavelength &lgr; is represented by &lgr;=&lgr;0n, where &lgr;0 is a wavelength of the microwave in a vacuum and n is a wavelength reducing rate of the dielectric plate represented by n=1/(∈t)½, where ∈t is a specific dielectric rate of the dielectric plate in a vacuum.

Abstract: A vertical-heat-treatment apparatus for semiconductor wafers has a compensation heater disposed under a lid for opening and closing a port at the bottom of a process chamber. The compensation heater heats the semiconductor wafers on a wafer boat from below through a window arranged on the lid. The compensation heater has seven heating lamps attached to a fixed base, which is vertically moved along with the lid, and rotatable reflection mirrors respectively surrounding the lamps.

Abstract: A light source device has a first mirror for reflecting light emitted by a light source, and a second mirror for reflecting the light reflected by the first mirror and guiding the reflected light toward the irradiation target portion. The first mirror has a curved reflection surface having an elliptic or parabolic shape in section along the optical axis direction. The light source is set at the position of a focal point of the elliptic or parabolic shape of the curved reflection surface. The second mirror has a linear reflection surface which has a linear shape in section along the optical axis direction and faces the curved reflection surface of the first mirror.

Abstract: A single-substrate-heat-treatment apparatus heats a semiconductor wafer by scanning the wafer with light having high energy density. Light emitted by a light source is reflected by a reflection mirror mechanism, and is then focused on the surface of the wafer on a work table via a transparent window of a process chamber. During heat treatment, the work table or reflection mirror mechanism is moved to scan the wafer surface with the light coming from the light source.

Abstract: Support members are provided in a vertically spaced relation on a plurality of upright columns. A wafer support member comprises a projection formed to be annular along an inner peripheral edge of a ring and an outer wall formed along an outer peripheral edge thereof. The wafer is positively supported at a position inwardly of the outer peripheral edge thereof by the projection of the wafer support member despite the presence or absence of a warp thereof. Therefore, a load caused by the weight of the wafer is dispersed over the entire projection of the wafer support member. This suppresses the concentration of stress on a specific portion of the wafer support portion, and a surface defect called a slip generated when the wafer is heat treated can be eliminated.

Abstract: Load lock chambers having a function of detecting positional deviation of wafers are provided in a process chamber of an ion injection apparatus, two on a carrying-in side, and two on a carrying-out side. One load lock chamber on the carrying-in side and one on the carrying-out side are used as a standby. Carrying-in and carrying-out members are outside of the process chamber. Two transfer members are in the process chamber. A dummy wafer stage is formed at a position which can be accessed by the transfer members. Wafers are transferred from load stages by the carrying-in member via the load lock chambers to the process chamber through a double operation line. Loading a wafer on the turn table and unloading a wafer therefrom can be performed simultaneously by operations of the transfer members and. The wafers are similarly carried out of the apparatus in a double operation line. At this time, dummy wafers in the process chamber can be used, if necessary.

Abstract: Load lock chambers having a function of detecting positional deviation of wafers are provided in a process chamber of an ion injection apparatus, two on a carrying-in side, and two on a carrying-out side. One load lock chamber on the carrying-in side and one on the carrying-out side are used as a standby. Carrying-in carrying-out members and are outside of the process chamber. Two transfer members are in the process chamber. A dummy wafer stage is formed at a position which can be accessed by the transfer members. Wafers are transferred from load stages by the carrying-in member via the load lock chambers to the process chamber through a double operation line. Loading a wafer on the turn table and unloading a wafer therefrom can be performed simultaneously by operations of the transfer members and. The wafers are similarly carried out of the apparatus in a double operation line. At this time, dummy wafers in the process chamber can be used, if necessary.