Abstract: A semiconductor light-emitting device and a manufacturing method therefor by which deterioration of external output is sufficiently suppressed under the high temperature and moisture so as to significantly improve pellet yield. A light emitting device of a double hetero structure, includes: a first GaAlAs clad layer of a first conductivity type; an active layer formed on the first clad layer, the active layer having an appropriate AlAs mixed crystal ratio relative to a GaAs crystal so that an emitted light wavelength from the device is substantially between 620 and 940 nm; and a second GaAlAs clad layer of a second conductivity type formed on the active layer, wherein the AlAs mixed crystal ratio on the surface thereof in the second clad layer is equal to or less than 0.67, and a difference of the AlAs mixed crystal ratio between the bottom layer of the first clad layer and the top layer of the second clad layer is equal to or less than 0.3.

Abstract: A light emitting device having: a first GaAlAs clad layer of a first conductivity type having a first AlAs mixed crystal ratio, the first GaAlAs clad layer serving as a first layer of the device; a GaAlAs active layer having a second AlAs mixed crystal ratio different from the first AlAs mixed crystal ratio, the second AlAs mixed crystal ratio being set to a value necessary for light emission wavelength within a range of 610 nm to 640 nm, the GaAlAs active layer serving as a second layer of the device; and a second GaAlAs clad layer of a second conductivity type having a third AlAs mixed crystal ratio different from the second AlAs mixed crystal ratio, the second GaAlAs clad layer serving as a third layer of the device, wherein the GaAlAs active layer of the first conductivity type serving as said second layer is sandwiched between the first GaAlAs clad layer of the first conductivity type serving as the first layer and the second GaAlAs clad layer of the second conductivity type serving as the third layer, t

Abstract: A method of manufacturing a gallium phosphide light-emitting device which characteristically comprises the step of growing a gallium phosphide layer of one conductivity type on a gallium phosphide substrate of the opposite conductivity type at a growth initiating temperature of 650.degree. to 850.degree.C by the liquid phase epitaxy process to provide a p-n junction contributing to emission of light.

Abstract: A method of manufacturing a green light-emitting gallium phosphide device which comprises the steps of preparing a liquid-phase epitaxial solution of one conductivity type containing a high concentration of nitrogen at a higher temperature than 1000.degree.C; bringing said epitaxial growth solution now cooled to 600.degree.C to 1000.degree.C into contact with a gallium phosphide substrate of the same conductivity type as said solution; cooling said epitaxial growth solution to form a liquid-phase epitaxial layer on said substrate; and forming a region in close proximity to said liquid-phase epitaxial layer with the opposite conductivity type thereto.