Abstract: A cyclopentenone derivative represented by the following formula [I] or an optically active substance or a salt thereof. ##STR1## (In the formula, R.sub.1 and R.sub.2 are same or different and each of them is straight or branched alkyl group, straight or branched alkenyl group, aromatic group, aromatic-aliphatic group or H with a proviso that the case where R.sub.1 =R.sub.2 =H, or R.sub.1 =benzyl group and R.sub.2 =H is excluded.

Abstract: Porcine- or human-derived .alpha.1-6 fucosyltransferases having the following action:action: transferring fucose from guanosine adiphosphate-fucose to the hydroxy group at 6-position of GlcNAc closest to R of a receptor (GlcNAc.beta.1-2Man.alpha.1-6)(GlcNAc.beta.1-2Man.alpha.1-3)Man.beta.1-4Gl cNAc.beta.1-4GlcNAc-R wherein R is an asparagine residue or a peptide chain carrying said residue, whereby to form (GlcNAc.beta.1-2Man.alpha.1-6)-(GlcNAc.beta.1-2Man.alpha.1-3)Man.beta.1-4G lcNAc.beta.1-4(Fuc.alpha.1-6)GlcNAc-R; a gene encoding these enzymes; an expression vector containing the gene; a transformant prepared by using this expression vector; and a method for producing a recombinant .alpha.1-6 fucosyltransferase, by culturing the transformant.

Abstract: A semiconductor device includes a p type InP substrate with a (001) surface; a mesa structure formed by dry etching, extending along a <110> direction, including semiconductor layers, having (110) side surfaces, and a height H.sub.m ; and mesa burying layers including a p type InP burying layer on the (110) side surfaces and the (001) surface, the p type InP burying layer having a thickness D.sub.p, and an n type InP burying layer on the p type InP burying layer. An angle between a (111)B surface and (001) surface is .theta..sub.111, the growth rates on the (110) side surfaces and on the (001) surface are respectively R.sub.g (110) and R.sub.g (001), an angle .theta. is tan .theta.=R.sub.g (110)/R.sub.g (001) and the critical thickness D.sub.n of the n type InP burying layer on the (001) surface when the n type InP burying layer is not grown on the (111)B surface is ##EQU1## The n type InP burying layer has a thickness D.ltoreq.D.sub.n.

Abstract: A process is provided for the total synthesis of a cyclic peptide, which is useful as antifungal drug, and novel compounds prepared by the synthesis method. The cyclic peptide is represented by the following formula (I): ##STR1## wherein X1, X2, X4 and X7 are independently N-methyl-.alpha.-amino acid or .alpha.-hydroxy acid,provided that at least one of X1, X2, X4 and X7 is an .alpha.-hydroxy acid;X3, X6 and X8 are independently .alpha.-amino acid;X5 is a cyclic amino acid;X9 is an N-methyl-.alpha.-amino acid or .alpha.-hydroxy acid substituted by a hydroxy group;and the dotted lines represent intramolecular hydrogen bonds.The process includes cyclizing a corresponding linear peptide between X5 and X6 via a peptide bond.

Abstract: To provide a process for the total synthesis of a cyclic peptide, which is useful as antifungal drug, and novel compounds prepared by the synthesis method. A process for synthesizing a cyclic peptide represented by the following formula (I): ##STR1## wherein X1, X2, X4 and X7 are independently N-methyl-.alpha.-amino acid or .alpha.-hydroxy acid,provided that at least one of X1, X2, X4 and X7 is a .alpha.-hydroxy acid;X3, X6 and X8 are independently .alpha.-amino acid;X5 is a cyclic amino acid;X9 is a N-methyl-.alpha.-amino acid or .alpha.-hydroxy acid substituted by a hydroxy group;and the dotted lines represent intramolecular hydrogen bonds;which process comprises cyclizing a corresponding linear peptide between X5 and X6 via a peptide bond, and a novel compound represented by the formula (I).

Abstract: A semiconductor laser device including a semiconductor substrate; a plurality of semiconductor layers including an AlGaAs layer epitaxially grown on said semiconductor substrate; a ridge having a reverse mesa shape and opposed sides formed of said plurality of semiconductor layers; an Al.sub.x Ga.sub.1-x As low temperature buffer layer (0.ltoreq..times..ltoreq.1) disposed on said AlGaAs layer at opposite sides of said ridge; a first semiconductor layer epitaxially disposed on said low temperature buffer layer at opposite sides of said ridge; and a second semiconductor layer epitaxially disposed on said ridge and said first semiconductor layer.

Abstract: Element production process in a method for producing an embedded type optoelectronic integrated circuit comprising an optical element part and a signal processing part, includes steps of producing a mask film on a surface of the substrate and removing a predetermined region of the film to produce a selective growth mask, producing a concave portion at a predetermined region on the surface of the substrate by etching using the selective growth mask, producing a crystal layer which is to be an optical element part in the concave part by crystal growth using the selective growth mask, flattening the surface of the crystal layer by grinding swelling crystal at the edges of the concave portion, and removing the selective growth mask and conducting mirror polishing by mechanochemical etching. Therefore, even when an optical device is embedded in the substrate using crystal growth method, a step due to swelling crystal does not arise on the substrate and .parts of wafer damaged by grinding is removed.

Abstract: In a method for producing a semiconductor device, a first semiconductor layer is epitaxially grown on a semiconductor substrate, an insulating film pattern is formed on the first semiconductor layer, and portions of the first semiconductor layer are removed by wet etching using the insulating film pattern as a mask to leave a ridge having a reverse mesa shape and a width. Ends of the insulating film pattern are removed by etching to approximately the width of the ridge, a second semiconductor layer is epitaxially grown on opposite sides of the ridge, and a third semiconductor layer is epitaxially grown on the ridge and the second semiconductor layer. The second semiconductor layer is evenly grown without concave portions at opposite sides of the ridge. In addition, the third semiconductor layer is evenly grown on the ridge and the second semiconductor layer, and an electrode reliably connects the surface of the third semiconductor layer.

Abstract: A disaccharide compound represented by formula (I): ##STR1## wherein R, R.sup.1, R.sup.2, R.sup.3, R.sup.4, and R.sup.5 are as defined in the specification and a salt thereof are disclosed. The compound exhibits excellent antitumor activity and low toxicity and is useful as an antitumor agent.

Abstract: Disaccharide derivatives represented by the formula (I): ##STR1## wherein R.sup.1 CO-- and R.sup.2 CO-- each represents a residue of a straight chain fatty acid having from 8 to 20 carbon atoms and having a hydroxyl group at the 3-position thereof; R.sup.3 CO-- and R.sup.4 CO-- each represents a residue of a straight chain fatty acid having from 8 to 20 carbon atoms; and m and n each represents an integer of from 8 to 12, and the salts thereof. The compounds exhibit biological activities equal to or higher than those of natural lipid A. Also, the compounds of this invention are very useful as standard reagent for determination of endotoxin in the samples to be tested.

Abstract: An antibacterial substance comprising a peptide comprising a fragment constituting lepidopteran A and containing the N-terminal amino acid residue of the lepidopteran A, wherein the carboxyl group at the C-terminal of said peptide is substituted with an alkyl amide group represented by Formula (I):--CONH(CH.sub.2).sub.n CH.sub.3 (I)wherein n is an integer of 2 to 16.This antibacterial substance shows good antibacterial activities against various bacteria, and is useful as pharmaceuticals and agricultural chemicals.

Abstract: A semiconductor light detector for detecting multiple wavelengths of light includes a semiconductor substrate, a plurality of first conductivity type semiconductor layers successively disposed on the semiconductor substrate with increasing energy band gap from the substrate towards a light incident surface of the detector, a first second conductivity type semiconductor region extending from the light incident surface and reaching the first conductivity type layer closest to the surface, and one or more additional second semiconductor regions successively surrounding the first second semiconductor region, reaching the surface and respective first conductivity type semiconductor layers.

Abstract: A disaccharide compound represented by formula (I): ##STR1## wherein R, R.sup.1, R.sup.2, R.sup.3, R.sup.4, and R.sup.5 are as defined in the specification and a salt thereof are disclosed. The compound exhibits excellent antitumor activity and low toxicity and is useful as an antitumor agent.

Abstract: An MSM type semiconductor light responsive element includes a semiconductor substrate, a first semiconductor layer, a pair of electrodes disposed on the first semiconductor layer forming Schottky barriers, and a second semiconductor layer comprising a semiconductor having a larger energy band gap than that of the first semiconductor layer disposed between and contacting the electrodes.

Abstract: A compound of the formula ##STR1## wherein R' is hydrogen atom or an alkyl group, m is an integer of 1 to 3, p is 1 or 2, x is an integer of 2 to 6, and y is an integer of 1 to 3, or a salt thereof, which has glutamate receptor inhibitor activity, a process for preparing the same and an insecticidal composition containing the same are provided.

Abstract: A semiconductor light receiving device, including; a photo diode having a polyimide film as a surface protection film, and a hermetically sealed package including the photo diode in an ambient gas including oxygen.

Abstract: A method for treating and preventing bacterial infections which comprises administering a 6-O-acylmuramyl depeptide of the formula: ##STR1## wherein X represents a divalent residual group of an amino acid such as L-alanine, L-serine, L-valine, etc., Y represents a residual group of a middle to higher fatty acid having 10 to 60 carbon atoms and isoGln represents a residual group of isoglutamine, or a pharmaceutical composition containing a 6-O-acylmuramyl dipeptide of the formula(I) as an active ingredient to a patient afflicted therewith.

Abstract: Muramyldipeptide derivatives of the formula (I): ##STR1## wherein X represents an amino acid residue such as of L-alanine, L-serine, L-valine, glycine, etc., and Y represents a group ##STR2## wherein R.sub.1 represents a hydrogen atom, an alkyl group of 1 to 6 carbon atoms, a carboxamide group or a carboxyl group, n represents an integer of 1 to 6, A represents a straight or branched chain, saturated or unsaturated aliphatic hydrocarbon residue of 7 to 30 carbon atoms, and "Acyl" means an acyl group of an aliphatic carboxylic acid having 2 to 6 carbon atoms. These compounds have excellent adjuvant activity and/or prophylactic and therapeutic effects against microbial infections.

Abstract: Muramyldipeptide derivatives of the formula: ##STR1## wherein Y represents a mycoloyl group or a synthetic higher acyl group having total carbon number of C30-C90 and having at least a branched chain of long alkyl group on the .alpha.-position thereof,Q represents an -L-alanyl-D-isoglutamine group, a -glycyl-D-isoglutamine group or an -L-seryl-D-isoglutamine group;Salts of such derivatives; the method of preparing such derivatives and their salts; the derivatives and their salts having potent immunoadjuvant activities and antitumor activity and being applicable as the agent for the immunotherapy of cancer for humans and animals.