Patents by Inventor Tetsuo Soga

Tetsuo Soga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing vapor grown carbon nanotube
    Patent number: 8043596
    Abstract: The invention provides a method for producing carbon nanotubes, comprising spraying an oil onto a catalyst metal supported by at least one support selected from the group consisting of silica gel, alumina, magnesia, silica-alumina and zeolite which is placed in an atmosphere that has been controlled to a specific temperature, and an apparatus therefor. According to the invention, a large amount of carbon nanotubes can be synthesized from inexpensive raw materials by using a simple apparatus.
    Type: Grant
    Filed: September 21, 2005
    Date of Patent: October 25, 2011
    Assignee: Showa Denko K.K.
    Inventors: Tetsuo Soga, Maheshwar Sharon, Rakesh Ashok Afre
  • Soluble fullerene derivatives
    Publication number: 20090176995
    Abstract: Disclosed are soluble diarylmethanofullerene derivatives that are effective as acceptors for organic thin-film solar batteries. They help to constitute effective organic thin-film solar batteries.
    Type: Application
    Filed: November 28, 2008
    Publication date: July 9, 2009
    Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA INSTITUTE OF TECHNOLOGY
    Inventors: Takeshi Toru, Norio Shibata, Shuichi Nakamura, Tetsuo Soga, Yasuhiko Hayashi, Surya Prakash Singh
  • Method for Producing Vapor Grown Carbon Nanotube
    Publication number: 20080089828
    Abstract: The invention provides a method for producing carbon nanotubes, comprising spraying an oil onto a catalyst metal supported by at least one support selected from the group consisting of silica gel, alumina, magnesia, silica-alumina and zeolite which is placed in an atmosphere that has been controlled to a specific temperature, and an apparatus therefor. According to the invention, a large amount of carbon nanotubes can be synthesized from inexpensive raw materials by using a simple apparatus.
    Type: Application
    Filed: September 21, 2005
    Publication date: April 17, 2008
    Applicant: SHOWA DENKO K.K.
    Inventors: Tetsuo Soga, Maheshwar Sharon, Rakesh Afre
  • Space solar cell
    Publication number: 20040231718
    Abstract: Disclosed is a solar cell for use in space, comprising compound semiconductors used as photovoltaic conversion material. The solar cell comprises a cover glass used for improving the radiation tolerance as a substrate for thin film deposition. The solar cell further comprises a crystalline thin film of the compound semiconductors directly formed on a surface of the cover glass for acting as the photovoltaic conversion material. The crystalline thin film of compound semiconductors is formed using a metal organic chemical vapor deposition system.
    Type: Application
    Filed: June 15, 2004
    Publication date: November 25, 2004
    Inventors: Masayoshi Umeno, Tetsuo Soga, Mitsuru Imaizumi
  • Space solar cell
    Publication number: 20020139417
    Abstract: Disclosed is a solar cell for use in space, comprising compound semiconductors used as photovoltaic conversion material. The solar cell comprises a cover glass used for improving the radiation tolerance as a substrare for thin film deposition. The solar cell further comprises a crystalline thin film of the compound semiconductors directly formed on a surface of the cover glass for acting as the photovoltaic conversion material. The crystalline thin film of compound semiconductors is formed using a metal organic chemical vapor deposition system.
    Type: Application
    Filed: March 25, 2002
    Publication date: October 3, 2002
    Inventors: Masayoshi Umeno, Tetsuo Soga, Mitsuru Imaizumi
  • Gallium arsenide superlattice crystal grown on silicon substrate and method of growing such crystal
    Patent number: 4789421
    Abstract: A GaAs growth crystal comprises a Si substrate, an intermediate layer formed on the substrate and a GaAs layer grown on the intermediate layer. The intermediate layer includes constituent GaP/GaAsP and GaAsP/GaAs superlattice layers and additionally AlP and AlGaP thin films.
    Type: Grant
    Filed: September 27, 1985
    Date of Patent: December 6, 1988
    Assignee: Daidotokushuko Kabushikikaisha
    Inventors: Masayoshi Umeno, Shiro Sakai, Tetsuo Soga