Abstract: A conductive member includes a substrate and a transparent conductive film formed on the substrate, the substrate is a non-heat-resistant substrate, the transparent conductive film contains crystalline particles containing indium oxide, and the mobility of carrier electrons is 70 cm2/V·s or more.

Abstract: Disclosed is a highly dense aggregate of brittle material particles having an interface at which the particles are bonded to each other and pores between the brittle material particles structuring the highly dense aggregate, where a porosity which is a volume ratio of the pores with respect to the whole of the highly dense aggregate is equal to or less than 20%, and a volume ratio of the pores communicating with an apparent outer surface of the highly dense aggregate with respect to a volume of all of the pores of the highly dense aggregate is equal to or higher than 65%.

Abstract: The present invention provides: a layered perovskite that has a high band gap energy and an excellent carrier transport capacity; a light absorption layer containing the layered perovskite; a light-absorption-layer-equipped substrate and a photoelectric conversion element that have the light absorption layer; and a solar cell having the photoelectric conversion element. In the layered perovskite according to present invention, the inter-surface distance of (002) planes calculated from an X-ray diffraction peak obtained by an out-of-plane method is 2.6 to 5.0 nm, and, in the X-ray diffraction peak, an intensity ratio ((111) plane/(002) plane) of an X-ray diffraction peak intensity at a (111) plane with respect to an X-ray diffraction peak intensity at the (002) plane is 0.03 or more.

Abstract: First brittle material particles; and second brittle material particles having smaller size than the first brittle material particles, wherein a void formed between the first brittle material particles is filled with at least one of the second brittle material particles, at a porosity of less than 20%.

Abstract: Provided is a vanadium oxide film which shows substantially no hysteresis of resistivity changes due to temperature rising/falling, has a low resistivity at room temperature, has a large absolute value of the temperature coefficient of resistance, and shows semiconductor-like resistance changes in a wide temperature range. In the vanadium oxide film, a portion of the vanadium has been replaced by aluminum and copper, and the amount of substance of aluminum is 10 mol % based on the sum total of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper. This vanadium oxide film has a low resistivity, has a large absolute value of the temperature coefficient of resistance, and shows substantially no hysteresis of resistivity changes due to temperature rising/falling.

Abstract: A first object is to provide a conductive film which is flexible from the standpoint that bending in a bending test or the like does not largely change its electrical resistance. Provided is a process for producing a flexible conductive film including applying a solution or dispersion containing at least any one of metal organic compounds, metals, and metal oxides onto a base material and treating the resulting film by at least either one of a heating step at a temperature not deteriorating the base material or an irradiation step with ultraviolet light, microwaves, or plasma.

Abstract: The phosphorescent phosphor of the present invention is represented by the composition formula: Sr1-aMgbZncAl2O4;EudMe wherein a, b, c, d, and e satisfy 0.05?a?0.8, 0.01?b?0.1, 0?c?0.2, 0?d?0.2, and 0?e?0.15, respectively, and M represents at least one element selected from the group consisting of dysprosium, samarium, lanthanum, praseodymium, terbium, holmium, thulium, lutetium, ytterbium, erbium, gadolinium, neodymium and cerium, and emits light due to excitation light in a wavelength region of 430 to 480 nm.

Abstract: A rope including a yarn twisted by using a raw thread of a polyethylene fiber having an ultrahigh molecular weight and a strand twisted by the yarn and subjected to rope-making through the strand, and a resin coating layer for protecting the rope is formed on an external surface of the yarn, an external surface of the strand or an external surface of the rope. A method of manufacturing the rope includes a pretreating step I of removing an oil content contained in the rope and performing an affinity enhancing treatment over a surface thereof and a resin coating step II of forming a resin coating layer for protecting the rope on an external surface of the yarn, an external surface of the strand or an external surface of the rope. The resin coating layer for protecting the rope is formed.

Abstract: Disclosed is a copper alloy article 1 including: a substrate 10 made of a copper alloy; a polyester-based resin body 40; and an intermediate layer 30 disposed between the substrate 10 and the polyester-based resin body 40, wherein the intermediate layer 30 contains an oxygen functional group.

Abstract: There are provided a rope which is excellent in a wear resistance and a bending resistance, and a manufacturing method of implementing the rope. A rope (1) including a yarn twisted by using a raw thread (5) of a polyethylene fiber (6) having an ultrahigh molecular weight and a strand (2) twisted by the yarn and subjected to steel-making through the strand (2), and a resin coating layer for protecting the rope (1) is formed on an external surface of the yarn, an external surface of the strand (2) or an external surface of the rope (1). A method of manufacturing the rope (1) includes a pretreating step I of removing an oil content contained in the rope (1) and performing an affinity enhancing treatment over a surface thereof and a resin coating step II of forming a resin coating layer for protecting the rope (1) on an external surface of the yarn, an external surface of the strand (2) or an external surface of the rope (1). The resin coating layer for protecting the rope (1) is formed.

Abstract: A first object is to provide a conductive film which is flexible from the standpoint that bending in a bending test or the like does not largely change its electrical resistance. Provided is a process for producing a flexible conductive film including applying a solution or dispersion containing at least any one of metal organic compounds, metals, and metal oxides onto a base material and treating the resulting film by at least either one of a heating step at a temperature not deteriorating the base material or an irradiation step with ultraviolet light, microwaves, or plasma.

Abstract: Provided is a vanadium oxide film which shows substantially no hysteresis of resistivity changes due to temperature rising/falling, has a low resistivity at room temperature, has a large absolute value of the temperature coefficient of resistance, and shows semiconductor-like resistance changes in a wide temperature range. In the vanadium oxide film, a portion of the vanadium has been replaced by aluminum and copper, and the amount of substance of aluminum is 10 mol % based on the sum total of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper. This vanadium oxide film has a low resistivity, has a large absolute value of the temperature coefficient of resistance, and shows substantially no hysteresis of resistivity changes due to temperature rising/falling.

Abstract: An inorganic material paste obtained by mixing an organometallic compound, inorganic material particles, and a solvent. Additionally provided is an inorganic material paste obtained by mixing inorganic material particles, which are obtained by subjecting an organometallic compound to calcination or light irradiation, and a solvent. The foregoing inorganic material paste can reduce the amount of glass material, reduce the film thickness because the volume density of the functional material is high, yield favorable production efficiency, and achieve cost reduction since it is suitable for mass production. For instance, upon producing a thin film resistor, the resistor obtained by using the paste of the present invention is characterized in having superior stability even in the form of a thin film, and having minimal change in the resistance value caused by self-heating even under a high current.

Abstract: A thin film which comprises an organic metal salt or an alkoxide salt or an amorphous thin film is formed on a substrate, wherein each of the thin films enables the formation of a Dion-Jacobson perovskite-type metal oxide represented by the composition formula A(Bn?1MnO3n+1) (wherein n is a natural number of 2 or greater; A represents one or more monovalent cations selected from Na, K, Rb and Cs; B comprises one or more components selected from a trivalent rare earth ion, Bi, a divalent alkaline earth metal ion and a monovalent alkali metal ion; and M comprises one or more of Nb and Ta; wherein a solid solution may be formed with Ti and Zr) on a non-oriented substrate. The resulting product is maintained at the temperature between room temperature and 600° C.; and crystallization is achieved while irradiating the amorphous thin film or the thin film comprising the organic metal salt or the alkoxide salt on the substrate with ultraviolet light such as ultraviolet laser.

Abstract: A method of producing a superconductive material involves the step (1) of applying a solution of an organic compound of metals and oxides of the metals forming a superconductive material, onto a support body to be subsequently dried, the provisional baking step (2) of causing organic components of the organic compound of the metals to undergo thermal decomposition, and the main baking process step (3) of causing transformation of the oxides of the metals into the superconductive material, thereby producing an epitaxially-grown superconductive coating material, wherein the support body is irradiated with the laser light during a period between the steps (1) and (2) from a surface of the support body, on the opposite side of the surface coated with the solution of the organic compound of the metals for forming the superconductive material.

Abstract: Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer. Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.

Abstract: A method of producing a superconductive material involves the step (1) of applying a solution of an organic compound of metals, oxides of the metals forming a superconductive material, onto a support body to be subsequently dried, a provisional baking step (2) of causing organic components of the organic compound of the metals to undergo thermal decomposition, and a main baking process step (3) of causing transformation of the oxides of the metals into the superconductive material, thereby producing an epitaxially-grown superconductive coating material, wherein at the time of irradiation of a surface of the support body coated with the solution of the organic compound of the metals for forming the superconductive material, and/or of a surface of the support body, opposite to the surface coated with the solution of the organic compound of the metals, with the laser light, during a period between the steps (1) and (2).

Abstract: The present invention provides a method for producing a perovskite-structure oxide, with which a highly crystalline oxide layer is formed on a base layer that is metal or the like. The method comprises the steps of: forming, on a base layer, a buffer layer having thermal conductivity lower than thermal conductivity of the base layer; forming a precursor layer of an ABO3-type perovskite-structure oxide comprising Ba at A sites thereof and Ti at B sites thereof on the buffer layer; decomposing the precursor layer, thereby forming an oxide layer comprising Ba and Ti; and annealing the oxide layer by irradiating laser light thereon.

Abstract: An object is to provide a method of making a metal oxide film with a sufficiently high degree of crystal orientation, without difficulties, at low cost, and with little damage to a base material and the metal oxide film, and to provide laminates and electronic devices using the same. A method includes a step of forming a metal film having a (111) plane, on a base material; a step of forming a metal oxide film on the (111) plane of the metal film; and a step of maintaining a temperature of the metal oxide film formed on the (111) plane of the metal film, at 25-600° C. and irradiating the metal oxide film with UV light.

Abstract: A thin film which comprises an organic metal salt or an an alkoxide salt or an amorphous thin film is formed on a substrate, wherein each of the thin films enables the formation of a Dion-Jacobson perovskite-type metal oxide represented by the composition formula A(Bn?1MnO3n+1) (wherein n is a natural number of 2 or greater; A represents one or more monovalent cations selected from Na, K, Rb and Cs; B comprises one or more components selected from a trivalent rare earth ion, Bi, a divalent alkaline earth metal ion and a monovalent alkali metal ion; and M comprises one or more of Nb and Ta; wherein a solid solution may be formed with Ti and Zr) on a non-oriented substrate. The resulting product is maintained at the temperature between room temperature and 600° C.; and crystallization is achieved while irradiating the amorphous thin film or the thin film comprising the organic metal salt or the alkoxide salt on the substrate with ultraviolet light such as ultraviolet laser.