Abstract: An information processing apparatus includes a detection unit and first and second classification units. The detection unit detects an event which causes a state of at least one bank constituting dynamic random access memory (DRAM) to transition. The first classification unit classifies the at least one bank state based on the detected event. The second classification unit classifies a DRAM state based on the at least one bank state. Statistical information that is based on the at least one bank or DRAM state is displayed with respect to a predetermined unit time. The at least one bank state and the DRAM state each includes at least one of the following: an operating state, in which data is being transferred, an inoperative state, in which data transfer is not possible due to a predetermined constraint, or a pause state, in which, although there is no constraint, data is not being transferred.

Abstract: An information processing apparatus includes a detection unit and first and second classification units. The detection unit detects an event which causes a state of at least one bank constituting dynamic random access memory (DRAM) to transition. The first classification unit classifies the at least one bank state based on the detected event. The second classification unit classifies a DRAM state based on the at least one bank state. Statistical information that is based on the at least one bank or DRAM state is displayed with respect to a predetermined unit time. The at least one bank state and the DRAM state each includes at least one of the following: an operating state, in which data is being transferred, an inoperative state, in which data transfer is not possible due to a predetermined constraint, or a pause state, in which, although there is no constraint, data is not being transferred.

Abstract: An image forming apparatus which forms a halftone image on a print medium by using a multipass process to scan a printhead N (N is an integer of 2 or more) times in a single area on the print medium and form dots by each scan operation includes a pass division unit which sets the print density of a scan operation in the first pass so as to prevent dots from overlapping with each other on the print medium, and sets the print densities of scan operations in the second to Nth passes, a tone reduction unit which generates print data of the respective scan operations in accordance with the print densities set by the pass division unit, and a printhead which prints a halftone image on a print medium on the basis of the print data generated by the tone reduction unit.

Abstract: An image forming apparatus which forms a halftone image on a print medium by using a multipass process to scan a printhead N (N is an integer of 2 or more) times in a single area on the print medium and form dots by each scan operation includes a pass division unit which sets the print density of a scan operation in the first pass so as to prevent dots from overlapping with each other on the print medium, and sets the print densities of scan operations in the second to Nth passes, a tone reduction unit which generates print data of the respective scan operations in accordance with the print densities set by the pass division unit, and a printhead which prints a halftone image on a print medium on the basis of the print data generated by the tone reduction unit.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

Abstract: An image forming apparatus which forms a halftone image on a print medium by using a multipass process to scan a printhead N (N is an integer of 2 or more) times in a single area on the print medium and form dots by each scan operation includes a pass division unit which sets the print density of a scan operation in the first pass so as to prevent dots from overlapping with each other on the print medium, and sets the print densities of scan operations in the second to Nth passes, a tone reduction unit which generates print data of the respective scan operations in accordance with the print densities set by the pass division unit, and a printhead which prints a halftone image on a print medium on the basis of the print data generated by the tone reduction unit.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

Abstract: The present invention relates to sliding parts, precision parts and timepieces and electronic equipment using those parts. Sliding parts are composed by a resin in which the degree of orientation of a fibrous filler is higher at the portion serving as the sliding surface than inside the sliding part, and the fibrous filler is oriented along the sliding surface on the sliding surface. Alternatively, precision parts are composed by a resin to which has been added carbon fibers for which a carbon compound is thermally decomposed to carbon in the vapor phase and simultaneously grown directly into fibers simultaneous to this thermal decomposition. Moreover, timepieces and electronic equipment are composed by these sliding parts or these precision parts.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

Abstract: The present invention relates to sliding parts, precision parts and timepieces and electronic equipment using those parts. Sliding parts are composed by a resin in which the degree of orientation of a fibrous filler is higher at the portion serving as the sliding surface than inside the sliding part, and the fibrous filler is oriented along the sliding surface on the sliding surface. Alternatively, precision parts are composed by a resin to which has been added carbon fibers for which a carbon compound is thermally decomposed to carbon in the vapor phase and simultaneously grown directly into fibers simultaneous to this thermal decomposition. Moreover, timepieces and electronic equipment are composed by these sliding parts or these precision parts.

Abstract: The present invention relates to sliding parts, precision parts and timepieces and electronic equipment using those parts. Sliding parts are composed by a resin in which the degree of orientation of a fibrous filler is higher at the portion serving as the sliding surface than inside the sliding part, and the fibrous filler is oriented along the sliding surface on the sliding surface. Alternatively, precision parts are composed by a resin to which has been added carbon fibers for which a carbon compound is thermally decomposed to carbon in the vapor phase and simultaneously grown directly into fibers simultaneous to this thermal decomposition. Moreover, timepieces and electronic equipment are composed by these sliding parts or these precision parts.

Abstract: An image forming apparatus which forms a halftone image on a print medium by using a multipass process to scan a printhead N (N is an integer of 2 or more) times in a single area on the print medium and form dots by each scan operation includes a pass division unit which sets the print density of a scan operation in the first pass so as to prevent dots from overlapping with each other on the print medium, and sets the print densities of scan operations in the second to Nth passes, a tone reduction unit which generates print data of the respective scan operations in accordance with the print densities set by the pass division unit, and a printhead which prints a halftone image on a print medium on the basis of the print data generated by the tone reduction unit.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

Abstract: A lithium ion secondary cell comprises a positive electrode, a negative electrode, a solid electrolyte and a fiber layer provided in an interface between the solid electrolyte and the positive electrode and/or in an interface between the solid electrolyte and the negative electrode.

Abstract: A lithium ion secondary cell comprises a positive electrode, a negative electrode, a solid electrolyte and a fiber layer provided in an interface between the solid electrolyte and the positive electrode and/or in an interface between the solid electrolyte and the negative electrode.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.