Abstract: An Al3Ti film having a large amount of dissolved Si is deposited on a semiconductor substrate to form a laminate with an Al wiring film, and heat treatment is performed at a temperature of at least 400° C., to thereby absorb excessive Si into the Al3Ti film and to so prevent the occurrence of Si nodules. By depositing Al film at a temperature of at least 400° C. at the time of depositing the Al wiring film on the Al3Ti film, excessive Si is caused to be absorbed in the Al3Ti film. Further, at the time of depositing a Ti film on the semiconductor substrate and depositing the Al wiring film, the Al film is deposited at a temperature of at least 400° C., there is reaction between the Ti film within the laminate, causing an Al3Ti film to be produced, and excessive Si is absorbed in the Al3Ti film produced.

Abstract: An Al3Ti film having a large amount of dissolved Si is deposited on a semiconductor substrate to form a laminate with an Al wiring film, and heat treatment is performed at a temperature of at least 400° C., to thereby absorb excessive Si into the Al3Ti film and so prevent the occurrence of Si nodules. By depositing Al film at a temperature of at least 400° C. at the time of depositing the Al wiring film on the Al3Ti film, excessive Si is caused to be absorbed in the Al3Ti film. Further, at the time of depositing a Ti film on the semiconductor substrate and depositing the Al wiring film, the Al film is deposited at a temperature of a least 400° C., there is reaction between the Ti film within the laminate, causing an Al3Ti film to be produced, and excessive Si is absorbed in the Al3 Ti film produced.

Abstract: In a method of manufacturing a semiconductor device of the invention, a substrate insulating film 102 is formed on a semiconductor substrate 100, a barrier layer 104 is formed on the substrate insulating film, an Al—Cu interconnection layer 106 is formed on the barrier layer by sputtering under a condition that the nitrogen concentration in the atmosphere in the sputtering deposition chamber is higher than 12 ppm but lower than 1000 ppm, and then an anti-reflective film 108 is formed on the Al—Cu interconnection layer.

Abstract: A method of manufacturing a semiconductor device, comprises, forming an insulator layer on an integrated circuit, forming a barrier layer comprised of a first titanium film and a titanium nitride film on the insulator layer, heat-treating the barrier layer to release nitrogen gas from the titanium nitride film, forming a second titanium film on the barrier layer, and forming an aluminum film used as a wired metal on the second titanium film.

Abstract: A method of manufacturing a semiconductor device including forming an insulator layer on an integrated circuit, forming a barrier layer having a first titanium film and a titanium nitride film on the insulator layer, heat-treating the barrier layer to release nitrogen gas from the titanium nitride film, forming a second titanium film on the barrier layer, and forming an aluminum film used as a wired metal on the second titanium film.

Abstract: In a method of manufacturing a semiconductor device of the invention, a substrate insulating film 102 is formed on a semiconductor substrate 100, a barrier layer 104 is formed on the substrate insulating film, an Al—Cu interconnection layer 106 is formed on the barrier layer by sputtering under a condition that the nitrogen concentration in the atmosphere in the sputtering deposition chamber is higher than 12 ppm but lower than 1000 ppm, and then an anti-reflective film 108 is formed on the Al—Cu interconnection layer.

Abstract: A method of manufacturing a semiconductor device, comprises, forming an insulator layer on an integrated circuit, forming a barrier layer comprised of a first titanium film and a titanium nitride film on the insulator layer, heat-treating the barrier layer to release nitrogen gas from the titanium nitride film, forming a second titanium film on the barrier layer, and forming an aluminum film used as a wired metal on the second titanium film.

Abstract: It is intended to solve a problem whereby Si nodules occur, in a wiring thin film deposition method, when depositing an Al wiring film on a semiconductor substrate with a sputter method using an Al—Si—Cu target. An Al3Ti film having a large amount of dissolved Si is deposited on a semiconductor substrate to form a laminate with an Al wiring film, and heat treatment is performed at a temperature of at least 400° C., to thereby absorb excessive Si into the Al3Ti film and so prevent the occurrence of Si nodules. Also, by depositing Al film at a temperature of at least 400° C. at the time of depositing the Al wiring film on the Al3Ti film, excessive Si is caused to be absorbed in the Al3Ti film. Further, at the time of depositing a Ti film on the semiconductor substrate and depositing the Al wiring film, the Al film is deposited at a temperature of at least 400° C.