Abstract: A plating solution containing 10 to 40 wt % of copper hexafluorosilicate. With the use of this plating solution, a copper thin film which has a low film stress and a low resistivity and which strongly (111)-oriented is plating-deposited on the fine pattern portion a copper seed layer, and film peeling caused by deterioration of an adhesion force between an underlying barrier layer and a copper seed layer even in a heat treatment process and in a chemical mechanical polishing (CMP) process after plating deposition is prevented.

Abstract: A plating solution containing 10 to 40 wt % of copper hexafluorosilicate. With the use of this plating solution, a copper thin film which has a low film stress and a low resistivity and which strongly (111)-oriented is plating-deposited on the fine pattern portion a copper seed layer, and film peeling caused by deterioration of an adhesion force between an underlying barrier layer and a copper seed layer even in a heat treatment process and in a chemical mechanical polishing (CMP) process after plating deposition is prevented.

Abstract: A process for producing sulfonylimide compound is represented by the formula (I) MN(SO2Rf1) (SO2Rf2) industrially easily at a low cost in an efficient manner comprising reactions of at least one sulfonyl halogenides represented by the formula (II) RfSO2X with anhydrous ammonia or an ammonium salt in the presence of a fluorine compound represented by the formula (III) MF, in which X represents either F or Cl among halogen elements of VIIb group in the periodic table, and M represents any one of Li, Na, K and Cs among alkali metals of group Ia in the periodic table, Rf1 and Rf2, which may be the same or different, respectively represent any one of a straight chain or branched compound of a fluoroalkyl, perfluoroalkyl, fluoroallyl or fluoroalkenyl group having 1 to 12 carbon atoms, and Rf in the formula (II) represents the same group as Rf1 or Rf2 in the formula (I).

Abstract: A process for producing sulfonylimide compound is represented by the formula (I) MN(SO2Rf1) (SO2Rf2) industrially easily at a low cost in an efficient manner comprising reactions of at least one sulfonyl halogenides represented by the formula (II) RfSO2X with anhydrous ammonia or an ammonium salt in the presence of a fluorine compound represented by the formula (III) MF, in which X represents either F or Cl among halogen elements of VIIb group in the periodic table, and M represents any one of Li, Na, K and Cs among alkali metals of group Ia in the periodic table, Rf1 and Rf2, which may be the same or different, respectively represent any one of a straight chain or branched compound of a fluoroalkyl, perfluoroalkyl, fluoroallyl or fluoroalkenyl group having 1 to 12 carbon atoms, and Rf in the formula (II) represents the same group as Rf1 or Rf2 in the formula (I).