Patents by Inventor Tetsuri Matsuki

Tetsuri Matsuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma processing apparatus and plasma processing method
    Patent number: 9685305
    Abstract: A plasma processing apparatus includes a dielectric member having communication holes through which an internal space communicates with a processing space; a first electrode and a second electrode; a first gas supply device which supplies a first processing gas; a first high frequency power supply which supplies a first high frequency power to at least one of the electrodes to generate a first plasma of the first processing gas; a depressurizing device which introduces the first processing gas and radicals in the first plasma; a second high frequency power supply which supplies a second high frequency power to generate a second plasma of the first processing gas and to attract ions; and a control unit which adjusts, by controlling a total amount of the first high frequency powers, the radical amount in the second plasma and adjusts, by controlling a ratio therebetween, the ion amount therein.
    Type: Grant
    Filed: July 3, 2014
    Date of Patent: June 20, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Koji Maruyama, Masato Horiguchi, Tetsuri Matsuki, Akira Koshiishi
  • PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    Publication number: 20160163515
    Abstract: A plasma processing apparatus includes a dielectric member having communication holes through which an internal space communicates with a processing space; a first electrode and a second electrode; a first gas supply device which supplies a first processing gas; a first high frequency power supply which supplies a first high frequency power to at least one of the electrodes to generate a first plasma of the first processing gas; a depressurizing device which introduces the first processing gas and radicals in the first plasma; a second high frequency power supply which supplies a second high frequency power to generate a second plasma of the first processing gas and to attract ions; and a control unit which adjusts, by controlling a total amount of the first high frequency powers, the radical amount in the second plasma and adjusts, by controlling a ratio therebetween, the ion amount therein.
    Type: Application
    Filed: July 3, 2014
    Publication date: June 9, 2016
    Inventors: Koji Maruyama, Masato Horiguchi, Tetsuri Matsuki, Akira Koshiishi