Patents by Inventor Tetsuro Akagi

Tetsuro Akagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8246744
    Abstract: By specifying an initial oxygen concentration in a silicon single crystal and a concentration of thermal donors produced according to a thermal history from 400° C. to 550° C. that the silicon single crystal undergoes during crystal growth, a nucleation rate of oxygen precipitates produced in the silicon single crystal while the silicon single crystal is subjected to a heat treatment is determined. Further, by specifying the heat treatment condition of the silicon single crystal, an oxygen precipitate density and an amount of precipitated oxygen under a given heat treatment condition are predicted by calculation.
    Type: Grant
    Filed: January 27, 2005
    Date of Patent: August 21, 2012
    Assignee: Komatsu Denshi Kinzoku Kabushiki Kaisha
    Inventors: Kozo Nakamura, Junsuke Tomioka, Tetsuro Akagi, Shiro Yoshino
  • Publication number: 20090210166
    Abstract: By specifying an initial oxygen concentration in a silicon single crystal and a concentration of thermal donors produced according to a thermal history from 400° C. to 550° C. that the silicon single crystal undergoes during crystal growth, a nucleation rate of oxygen precipitates produced in the silicon single crystal while the silicon single crystal is subjected to a heat treatment is determined. Further, by specifying the heat treatment condition of the silicon single crystal, an oxygen precipitate density and an amount of precipitated oxygen under a given heat treatment condition are predicted by calculation.
    Type: Application
    Filed: January 27, 2005
    Publication date: August 20, 2009
    Applicant: KOMATSU DENSHI KINZOKU KABUSHIKI KAISHA
    Inventors: Kozo Nakamura, Junsuke Tomioka, Tetsuro Akagi, Shiro Yoshino
  • Patent number: 5385115
    Abstract: A semiconductor wafer heat treatment method for improving the yield of devices which are end products by sampling sliced single-crystal silicon wafers made by CZ method to previously calculate the thermal donor concentration of each portion on the wafers and providing them with the IG heat treatment process which causes oxygen precipitation nucleus under the heat treatment condition determined according to the thermal donor concentration so that the change value (delta Oi) of the initial oxygen concentration (initial Oi) before the IG heat treatment to the oxygen concentration after the heat treatment will be kept within a predetermined range.
    Type: Grant
    Filed: May 13, 1993
    Date of Patent: January 31, 1995
    Assignee: Komatsu Electronic Metals Co., Ltd.
    Inventors: Junsuke Tomioka, Tetsuro Akagi, Shiro Yoshino
  • Patent number: 4188785
    Abstract: Disclosed is a fluid coupling which includes: a housing being used as a rotary driving member; a rotor rotatably mounted in the housing and being used as a driven member, a fluid pump having a pump chamber defined between the housing and the rotor; a fluid inlet port and a fluid outlet port; and a fluid circulation passage between the chamber and the housing, such that fluid in the pump circulates from the fluid circulation passage into the pump chamber through the inlet port and from the pump chamber through the outlet port into the fluid passage.
    Type: Grant
    Filed: April 4, 1978
    Date of Patent: February 19, 1980
    Assignee: Toyota Jidosha Kogyo Kabushiki Kaisha
    Inventors: Masahisa Ando, Keigo Kato, Masami Yamazaki, Tetsuro Akagi