Patents by Inventor Tetsuro Hemmi

Tetsuro Hemmi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure, semiconductor device, and method for producing semiconductor structure
    Patent number: 9496345
    Abstract: The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an ?-type crystal structure, containing aluminum at impurity concentration of 1×1019 cm?3 or higher, and having thickness of 50 ?m or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having ?-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×103 Pa to 25×103 Pa.
    Type: Grant
    Filed: July 31, 2013
    Date of Patent: November 15, 2016
    Assignees: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
    Inventors: Kazutoshi Kojima, Shiyang Ji, Tetsuya Miyazawa, Hidekazu Tsuchida, Koji Nakayama, Tetsuro Hemmi, Katsunori Asano
  • SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR STRUCTURE
    Publication number: 20150214306
    Abstract: The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an ?-type crystal structure, containing aluminum at impurity concentration of 1×1019 cm?3 or higher, and having thickness of 50 ?m or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having ?-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×103 Pa to 25×103 Pa.
    Type: Application
    Filed: July 31, 2013
    Publication date: July 30, 2015
    Inventors: Kazutoshi Kojima, Shiyang Ji, Tetsuya Miyazawa, Hidekazu Tsuchida, Koji Nakayama, Tetsuro Hemmi, Katsunori Asano