Abstract: A heater member (1a) includes a support (10), a heating element (20), and at least one pair of power supply electrodes (30). The support (10) is made of an organic polymer and has a sheet shape. The heating element (20) is made of a polycrystalline material containing indium oxide as a main component and in contact with one principal surface of the support (10). The power supply electrodes (30) are in contact with one principal surface of the heating element (20). The heating element (20) has a sheet resistance in the range from 10 to 150 ?/sq. The heating element (20) has a thickness of more than 20 nm and not more than 200 nm. The internal stress of the heating element (20) as measured by an X-ray stress measurement method is 500 MPa or less.

Abstract: A heater (1a) includes: a substrate (10); a heat-generation layer (20) that is a conductive metal oxide layer (22); a pair of power supply electrodes (30); and a pressure-sensitive adhesive bonding laminate (40). The substrate (10) is formed of an organic polymer. The heat-generation layer (20) is disposed in contact with the substrate (10) in the thickness direction of the substrate (10). The pair of power supply electrodes (30) are electrically connected to the heat-generation layer (20). The pressure-sensitive adhesive bonding laminate (40) has a pressure-sensitive adhesive surface (41a) used for pressure-sensitive adhesive bonding with an adherend. In the pressure-sensitive adhesive bonding laminate (40), a plurality of pressure-sensitive adhesive layers (41, 42) and at least one support (45) for the plurality of pressure-sensitive adhesive layers are alternately laminated between the pressure-sensitive adhesive surface (41a) and the heat-generating layer (20).

Abstract: A heater (1a) includes a substrate (10), a transparent conductive oxide layer (20), a first power supply electrode (31), and a second power supply electrode (32). The ratio of the sum of the electric resistance of the first power supply electrode (31) in a particular direction and the electric resistance of the second power supply electrode (32) in the particular direction to the electric resistance of the transparent conductive oxide layer (20) between the first power supply electrode (31) and the second power supply electrode (32) is 45% or less. The transparent conductive oxide layer (20) has a thickness from 20 to 250 nm and is formed of a material having a specific resistance from 1.4×10?4 to 3.0×10?4 ?·cm.

Abstract: A heater member (1a) includes a support (10), a heating element (20), and at least one pair of power supply electrodes (30). The support (10) is made of an organic polymer and has a sheet shape. The heating element (20) is made of a polycrystalline material containing indium oxide as a main component and in contact with one principal surface of the support (10). The power supply electrodes (30) are in contact with one principal surface of the heating element (20). The heating element (20) has a sheet resistance in the range from 10 to 150 ?/sq. The heating element (20) has a thickness of more than 20 nm and not more than 200 nm. The internal stress of the heating element (20) as measured by an X-ray stress measurement method is 500 MPa or less.

Abstract: A liquid crystal device comprising, at least, a liquid crystal element comprising at least a pair of substrates and a liquid crystal material disposed between the pair of electrodes, and electric field-applying means for applying an electric field to the liquid crystal element. The electric field-applying means applies a reverse electric field (?TINT) so as to cancel an orientation energy difference (TINT) depending upon relative directions between the applied electric field and aligned liquid crystal molecular axis in the liquid crystal element. There is provided a liquid crystal device capable of effectively suppressing the reduction in contrast, even when the optical response speed is increased.

Abstract: In the fabrication of a CMOS-TFT, non-selectively doping (for both of p- and n-type TFTS) and selectively doping (only for the n-type TFT) with p-type impurities (B: boron) are successively performed at very low concentrations to control the threshold voltages (Vthp and Vthn). More specifically, the Id-Vg characteristics of the p- and n-type TFTs are initially negatively shifted. In this state, non-selectively doping is performed positively to shift the p- and n-type TFTs first to adjust the Vthp to a specified value. Selectively doping is then performed positively to shift only the n-type TFT to adjust the Vthn to a specified value. The threshold voltages of the p- and n-type TFTs constructing the CMOS-TFT can be independently and efficiently (with minimum photolithography) controlled with high accuracy.

Abstract: In the fabrication of a CMOS-TFT, non-selectively doping (for both of p- and n-type TFTS) and selectively doping (only for the n-type TFT) with p-type impurities (B: boron) are successively performed at very low concentrations to control the threshold voltages (Vthp and Vthn). More specifically, the Id-Vg characteristics of the p- and n-type TFTs are initially negatively shifted. In this state, non-selectively doping is performed positively to shift the p- and n-type TFTs first to adjust the Vthp to a specified value. Selectively doping is then performed positively to shift only the n-type TFT to adjust the Vthn to a specified value. The threshold voltages of the p- and n-type TFTs constructing the CMOS-TFT can be independently and efficiently (with minimum photolithography) controlled with high accuracy.