Abstract: This invention is to provide a method of polishing a silicon wafer wherein a high flatness can be attained likewise the conventional polishing method and further the occurrence of defects due to the remaining of substances included in the polishing solution on the surface of the wafer can be suppressed as well as a polished silicon wafer. The method of polishing a silicon wafer by supplying a polishing solution containing abrasive grains onto a surface of a polishing pad and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, is characterized in that the number of abrasive grains included in the polishing solution is controlled to not more than 5×1013 grains/cm3.

Abstract: Disclosed is a wafer having a good haze level in spite of the fact that the inclination angle of {110} plane in the wafer is small. Also disclosed is a method for producing a silicon epitaxial wafer, which comprises the steps of: growing an epitaxial layer on a silicon single crystal substrate having a main surface of {110} plane of which an off-angle is less than 1 degree; and polishing the surface of the epitaxial layer until the surface of the epitaxial layer has a haze level of 0.18 ppm or less (as measured by SP2 at a DWO mode).

Abstract: This invention is to provide a method of polishing a silicon wafer wherein a high flatness can be attained likewise the conventional polishing method and further the occurrence of defects due to the remaining of substances included in the polishing solution on the surface of the wafer can be suppressed as well as a polished silicon wafer. The method of polishing a silicon wafer by supplying a polishing solution containing abrasive grains onto a surface of a polishing pad and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, is characterized in that the number of abrasive grains included in the polishing solution is controlled to not more than 5×1013 grains/cm3.

Abstract: Disclosed is a wafer having a good haze level in spite of the fact that the inclination angle of {110} plane in the wafer is small. Also disclosed is a method for producing a silicon epitaxial wafer, which comprises the steps of: growing an epitaxial layer on a silicon single crystal substrate having a main surface of {110} plane of which an off-angle is less than 1 degree; and polishing the surface of the epitaxial layer until the surface of the epitaxial layer has a haze level of 0.18 ppm or less (as measured by SP2 at a DWO mode).

Abstract: A method of evaluating the presence or absence and/or degree of metal contamination of a semiconductor substrate including etching the surface of the semiconductor substrate by SC-1 cleaning and/or a HF cleaning, detecting bright points on the surface of the etched substrate with a foreign matter inspection device, and evaluating the presence or absence and/or degree of metal contamination of the semiconductor substrate based on the distribution pattern of bright points detected on the surface of the substrate. Also disclosed is a method of manufacturing a semiconductor substrate comprising mirror polishing a silicon wafer surface, wherein the mirror polishing is conducted using a slurry having a Cu content of approximately equal to or less than 10 ppb, a Ni content of approximately equal to or less than 10 ppb, and an Fe content of approximately equal to or less than 1,000 ppb, and evaluating the semiconductor substrate as above.

Abstract: The method of manufacturing a semiconductor substrate including mirror polishing a silicon wafer surface, wherein the mirror polishing is conducted using a slurry having a Cu content of approximately equal to or less than 10 ppb, a Ni content of approximately equal to or less than 10 ppb, and an Fe content of approximately equal to or less than 1,000 ppb. The method of evaluating a quality of a semiconductor substrate including etching the surface of the semiconductor substrate by SC-1 cleaning and/or a HF cleaning, detecting bright points on the surface of the etched substrate with a foreign matter inspection device, and evaluating the quality of the semiconductor substrate based on the bright points detected on the surface of the substrate.