Abstract: A composite member has a pressure-sensitive adhesive layer, a conductive layer body including an insulating layer having a higher modulus of elasticity than the pressure-sensitive adhesive layer and two conductive layers electrically insulated by the insulating layer and disposed to be spaced from each other, and a member having a higher modulus of elasticity than the pressure-sensitive adhesive layer, in which the member is in contact with, out of the two conductive layers, a first conductive layer provided on a side on which a radius of curvature of the insulating layer is larger in a case of bending the conductive layer body in a bending direction, and the pressure-sensitive adhesive layer is disposed at a portion except for between the insulating layer and each of the two conductive layers and between the first conductive layer and the member having a higher modulus of elasticity than the pressure-sensitive adhesive layer.

Abstract: A flexible device and an organic electroluminescence display device that include a laminate for a touch panel. The laminate for a touch panel that is bendable, comprising a plurality of members and is bendable, in which at least one of the members is a member including a conductive portion, at least one of the members is an adhesive film, and the adhesive film has a 180 degree peel strength of 0.5 N/mm or higher with respect to an adjacent member and has a thickness of 30 ?m or more.

Abstract: The present invention provides a pressure sensitive adhesive composition capable of forming a pressure sensitive adhesive sheet which has excellent adhesiveness and a low relative permittivity and causes less change in the relative permittivity according to environmental temperatures, a pressure sensitive adhesive sheet, a pressure sensitive adhesive film, a laminate for a touch panel including the pressure sensitive adhesive sheet, and a capacitive touch panel.

Abstract: There is provided a compound represented by a specific formula, which has an absorption maximum at 400 nm or more and less than 720 nm in a UV-visible absorption spectrum, wherein a molar extinction coefficient is 10,000 mol?1·l·cm?1 or more at the absorption maximum wavelength, and a difference between a melting point and a deposition temperature (a melting point?a deposition temperature) is 31° C. or more.

Abstract: The solid-state imaging device includes lower electrodes acting as pixel electrodes, an organic photoelectric conversion film formed on the lower electrodes and generating electric charge in response to received light, and a transparent upper electrode that are formed on a substrate having signal readout circuits. The organic photoelectric conversion film, a transition area having at least one of its film thickness and film quality undergone transition from a film thickness and film quality of an area corresponding to a pixel electrode area in which the lower electrodes have been formed is an area that starts from an outer edge of the organic photoelectric conversion film and ends at a point away from the outer edge by a distance of 200 ?m or less.

Abstract: A method for manufacturing a photoelectric conversion device including a first process where a plurality of pixel electrodes are formed on a dielectric layer; a second process where a light receiving layer that includes an organic material is formed on the plurality of pixel electrodes; and a third process where a counter electrode is formed on the light receiving layer. The first process includes a film forming process of a pixel electrode material on the dielectric layer; a patterning process of the film of the pixel electrode material; and a heating process for heating the substrate at 270° C. after the patterning process. Such process forming a photoelectric conversion device of a solid-state imaging device which also includes a signal reading circuit formed on the substrate, the signal reading circuit capable of reading out the signal according to a quantity of electric charges collected in the first electrode.

Abstract: A photoelectric element includes a conductive layer, an organic photoelectric layer, a blocking layer and a transparent conductive layer, the organic photoelectric layer contains a p type organic photoelectric material having a glass transition temperature of 100° C. or higher and forms an amorphous layer, and the blocking layer contains a blocking material having a glass transition temperature of 140° C. or higher.

Abstract: A photoelectric conversion device comprising an electrically conductive film, an organic photoelectric conversion film, and a transparent electrically conductive film, wherein the organic photoelectric conversion film contains a compound represented by the following formula (1) and an n-type organic semiconductor: wherein each of R1 and R2 independently represents a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group or an unsubstituted heteroaryl group, each of R3 to R11 independently represents a hydrogen atom or a substituent provided that an acidic group is excluded, m represents 0 or 1, n represents an integer of 0 or more, R1 and R2, R3 and R4, R3 and R5, R5 and R6, R6 and R8, R7 and R8, R7 and R9, or R10 and R11 may be combined each other to form a ring, and when n is an integer of 2 or more, out of a plurality of R7's and R8's, a pair of R7's, a pair of R8's, or a pair of R7 and R8 may be combined each other to form a ring.

Abstract: An organic compound and a photoelectric conversion device containing the organic compound are disclosed. The organic compound and device realize high photoelectric conversion efficiency, low dark current and high-speed responsivity. It has been found that when this organic compound and an n-type semiconductor are used in combination, high-speed responsivity can be realized while maintaining high heat resistance, an aspect of which has not been seen when the connection part between a donor part and an acceptor part is a phenylene group.

Abstract: A photoelectric conversion element is provided and includes: an electrically conductive thin layer; an organic photoelectric conversion layer; and a transparent electrically conductive thin layer. The organic photoelectric conversion layer contains: a compound represented by formula (I); and a fullerene or a fullerene derivative. Formula (I): In the formula, Z1 represents an atomic group necessary for forming a 5- or 6-membered ring, L1, L2 and L3 each independently represents an unsubstituted methine group or a substituted methine group, D1 represents an atomic group, and n represents an integer of 0 or more.

Abstract: An organic photoelectric conversion material for a photoelectric conversion element is provided, the organic photoelectric conversion material represented by formula 1 and having a molecular weight of 250 or greater but not greater than 800: wherein, A represents an electron withdrawing atomic group; R1, R2 and R3 each independently represents a hydrogen atom or a substituent; L represents a divalent ? conjugated substituent; D represents an electron donating aromatic substituent; and X represents O, S, or N—Ra in which Ra represents a hydrogen atom or a substituent.

Abstract: A photoelectric conversion element includes an insulating film, a first electrode, a light receiving layer, and a second electrode. The first electrode is formed on the insulating film and is made of titanium oxynitride. The light receiving layer is formed on the first electrode and includes an organic material. A composition of the first electrode just before forming the light receiving layer meets (1) a requirement that an amount of oxygen contained in the whole of the first electrode is 75 atm % or more of an amount of titanium, or (2) a requirement that in a range of from the substrate side of the first electrode to 10 nm or a range of from the substrate side of the first electrode to ? of the thickness of the first electrode, an amount of oxygen is 40 atm % or more of an amount of titanium.

Abstract: A photoelectric conversion element includes: an electrically conductive thin layer; an organic photoelectric conversion layer containing a compound having a partial structure represented by formula (I) and a fullerene or a fullerene derivative; and a transparent electrically conductive thin layer: X represents O, S or N—R10, R10 represents a hydrogen atom or a substituent, Rx and Ry represent a hydrogen atom or a substituent, with at least one representing an electron-withdrawing group, Rx and Ry may combine to form a ring, R represents a bond (—), a hydrogen atom or a substituent, with at least one being the bond, nr represents an integer of 1 to 4, R's may be the same or different when nr is 2 or more, and R's at the 2- and 3-positions or R's at the 5- and 6-positions may combine with each other to form a ring.

Abstract: Provided is a photoelectric conversion device comprising a transparent electrically conductive film, a photoelectric conversion film, and an electrically conductive film, wherein the photoelectric conversion film contains a compound represented by the following formula (i): wherein each of R2 to R9 independently represents a hydrogen atom or a substituent, provided that each of at least two out of R3, R4, R7 and R8 independently represents an aryl group, a heterocyclic group or —N(Ra)(Rb), each of Ra and Rb independently represents a hydrogen atom or a substituent, and at least either Ra or Rb represents an aryl group or a heterocyclic group; and R1 represents an alkyl group, an aryl group or a heterocyclic group.

Abstract: A photoelectric conversion element is provided and includes: a conductive thin layer; an organic photoelectric conversion layer including a compound represented by formula (I); and a transparent conductive thin layer, in this order: In the formula (I), X represents O, S or N—R10; Rx and Ry each independently represents a hydrogen atom or a substituent, at least one of Rx and Ry is an electron-withdrawing group, and Rx and Ry may be connected to each other to form a ring, provided that Rx and Ry do not represent a cyano group at the same time; R7 to R10 each independently represents a hydrogen atom or a substituent, and R8 and R9 may be connected to each other to form a ring; L represents a linking group comprising a conjugated bond; and D1 represents a group of atoms.

Abstract: A photoelectric conversion element comprises a photoelectric conversion section that includes: a pair of electrodes; and a photoelectric conversion layer disposed between the pair of electrodes, wherein the photoelectric conversion section further comprises between one of the pair of electrodes and the photoelectric conversion layer a first charge-blocking layer that restrains injection of charges from the one of the electrodes into the photoelectric conversion layer when a voltage is applied to the pair of electrodes, and the first charge-blocking layer comprises a plurality of layers.

Abstract: The solid-state imaging device includes lower electrodes acting as pixel electrodes, an organic photoelectric conversion film formed on the lower electrodes and generating electric charge in response to received light, and a transparent upper electrode that are formed on a substrate having signal readout circuits. The organic photoelectric conversion film, a transition area having at least one of its film thickness and film quality undergone transition from a film thickness and film quality of an area corresponding to a pixel electrode area in which the lower electrodes have been formed is an area that starts from an outer edge of the organic photoelectric conversion film and ends at a point away from the outer edge by a distance of 200 ?m or less.

Abstract: A photoelectric conversion element comprises a first photoelectric conversion part, the first photoelectric conversion part comprising: a pair of electrodes; and a photoelectric conversion film between the pair of electrodes, wherein the photoelectric conversion film comprises an organic photoelectric conversion material having an absorption peak in an infrared region of an absorption spectrum within a combined range of a visible region and the infrared region and generating an electric charge according to light absorbed, and the first photoelectric conversion part as a whole transmits 50% or more of light in the visible region.

Abstract: A photoelectric conversion device comprising a transparent electrically conductive film, a photoelectric conversion film and an electrically conductive film in this order, wherein the photoelectric conversion film comprises a photoelectric conversion layer, and an electron blocking layer, wherein the electron blocking layer contains a compound represented by the specific formula.

Abstract: An organic photoelectric conversion device having: a first electrode; a second electrode opposing to the first electrode; and an organic material-containing photoelectric conversion layer provided between the first electrode and the second electrode, wherein an electron spin number of the photoelectric conversion layer is not more than 1.0×1015/cm3.