Patents by Inventor Tetsuro Nii

Tetsuro Nii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5391410
    Abstract: An amorphous silicon thin film is disclosed, which is produced by plasma CVD in which hydrogen-diluted SiH.sub.4 and N.sub.2 O are supplied during chemical vapor deposition as reacting source gases for the chemical vapor deposition, wherein the degree of hydrogen dilution is from 10 to 20.
    Type: Grant
    Filed: May 28, 1993
    Date of Patent: February 21, 1995
    Assignee: Showa Shell Sekiku K.K.
    Inventors: Tetsuro Nii, Porponth Sichanugrist, Takahisa Kase
  • Patent number: 5366713
    Abstract: A method of forming p-type silicon carbide which comprises using reactive source gases comprising silane, hydrogen, trimethylboron, and either diborane or boron trifluoride, to thereby attain a widened band gap by the action of the carbon contained in the trimethylboron.
    Type: Grant
    Filed: May 28, 1993
    Date of Patent: November 22, 1994
    Assignee: Showa Shell Sekiyu K.K.
    Inventors: Porponth Sichanugrist, Tetsuro Nii, Takahisa Kase
  • Patent number: 5336623
    Abstract: A process for producing an integrated solar cell comprising deposited unit cells having a p-i-n junction, with an n-type layer forming an n-p Junction between unit cells comprising a microcrystalline amorphous silicon layer, in which said microcrystalline amorphous silicon layer is subjected to a hydrogen discharge treatment for a given period of time. By the hydrogen discharge treatment, the film resistance of the n-type layer is reduced to accelerate ohmic property with a p-type layer thereby achieving increased conversion efficiency.
    Type: Grant
    Filed: March 2, 1993
    Date of Patent: August 9, 1994
    Assignee: Showa Shell Sekiyu K.K.
    Inventors: Porponth Sichanugrist, Tetsuro Nii