Abstract: A plasma display panel includes a pair of substrates, a dielectric layer, a protective film, and a discharge gas. The pair of substrates are disposed in an opposite relation with a discharge space defined therebetween. The dielectric layer is formed on at least one of the substrates so that the dielectric layer covers a plurality of electrodes formed on said at least one of the substrates. The protective film is formed on the dielectric layer so that the protective film covers the dielectric layer. The discharge gas is filled in the discharge space and contains xenon. The dielectric layer is formed of a material containing silicon oxide. The protective film is formed of a material that has little aptitude to pass ultraviolet light generated by an electric discharge between the electrodes.

Abstract: A panel structure is provided in which a dielectric layer having no voids thereinside can be formed by a vapor deposition method. A layered film of plural metal layers that constitute an electrode covered with a dielectric layer is formed to have a stepped shape in which a width is smaller from a bottom layer to an uppermost layer for each layer in order. The stepped shape is formed by projecting an edge portion of a lower layer by design compared to an upper layer.

Abstract: A method of forming an electrode for a plasma display panel, in which the method includes the steps of forming a first metal film on a second metal film after formation of the second metal film on a substrate, forming a resist pattern on the laminated metal films, and etching the laminated metal films with an etching solution, thereby forming an electrode of the laminated films. A first metal is different from a second metal, and the first metal and the second metal have properties such that the surface potential of the first metal decreases when the first metal and the second metal in the state of being soaked in an etching solution of the first metal are short-circuited. During or after the formation of the first metal film, a diffusion step is performed in which an atmospheric temperature is kept at such a temperature that the metal atoms of the second metal film diffuse in and on the surface of the first metal film.