Patents by Inventor Tetsushi Hada

Tetsushi Hada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190006278
    Abstract: Object is to provide a semiconductor device with fewer malfunctions. The semiconductor device has a semiconductor chip having a first-signal-output circuit operating at a first-power-supply voltage, a second-signal-output circuit operating at a second power supply voltage, and a plurality of bump electrodes; and a wiring board including a first main surface facing the main surface of the semiconductor chip, a second main surface opposite to the first main surface with a wiring layer therebetween, first external terminals on the first main surface, and second ones on the second main surface; the former being mounted on the latter to couple the bump electrodes to the first external terminals. When viewed from the second main surface, second external terminals to be supplied with the first signal and the second signal are arranged closer to the semiconductor chip than second external terminals to be supplied with the first power supply voltage and the second power supply voltage.
    Type: Application
    Filed: September 10, 2018
    Publication date: January 3, 2019
    Inventors: Takafumi BETSUI, Nobuyuki MORIKOSHI, Tetsushi HADA
  • Patent number: 10103100
    Abstract: The semiconductor device has a semiconductor chip having a first-signal-output circuit operating at a first-power-supply voltage, a second-signal-output circuit operating at a second power supply voltage, and a plurality of bump electrodes; and a wiring board including a first main surface facing the main surface of the semiconductor chip, a second main surface opposite to the first main surface with a wiring layer therebetween, first external terminals on the first main surface, and second ones on the second main surface; the former being mounted on the latter to couple the bump electrodes to the first external terminals. When viewed from the second main surface, second external terminals to be supplied with the first signal and the second signal are arranged closer to the semiconductor chip than second external terminals to be supplied with the first power supply voltage and the second power supply voltage.
    Type: Grant
    Filed: May 24, 2016
    Date of Patent: October 16, 2018
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Takafumi Betsui, Nobuyuki Morikoshi, Tetsushi Hada
  • Publication number: 20170033045
    Abstract: Object is to provide a semiconductor device with fewer malfunctions. The semiconductor device has a semiconductor chip having a first-signal-output circuit operating at a first-power-supply voltage, a second-signal-output circuit operating at a second power supply voltage, and a plurality of bump electrodes; and a wiring board including a first main surface facing the main surface of the semiconductor chip, a second main surface opposite to the first main surface with a wiring layer therebetween, first external terminals on the first main surface, and second ones on the second main surface; the former being mounted on the latter to couple the bump electrodes to the first external terminals. When viewed from the second main surface, second external terminals to be supplied with the first signal and the second signal are arranged closer to the semiconductor chip than second external terminals to be supplied with the first power supply voltage and the second power supply voltage.
    Type: Application
    Filed: May 24, 2016
    Publication date: February 2, 2017
    Inventors: Takafumi BETSUI, Nobuyuki MORIKOSHI, Tetsushi HADA
  • Patent number: 6020764
    Abstract: There is provided emitter coupled logic (ECL) circuitry comprising a differential amplifier circuit for receiving an input signal and a reference potential Vbb, and for causing an output circuit to make a transition to its high state by charging a parasitic capacitor which is parasitic in the output circuit, and make a transition to its low state by discharging a charge stored in the parasitic capacitor to a potential Vtt by way of a load resister, according to whether or not the level of the input signal is larger than the reference potential Vbb, and a discharge switching circuit which can switch to its conductive state in response to a control signal applied thereto so that the charge stored in the parasitic capacitor is also discharged to the negative potential Vee by way of the discharge switching circuit.
    Type: Grant
    Filed: June 12, 1997
    Date of Patent: February 1, 2000
    Assignees: Mitsubishi Electric Engineering Co., Ltd., Mitsubishi Denki Kabushiki Kaisha
    Inventor: Tetsushi Hada