Abstract: A semiconductor storage device includes a first word line electrically connected to a first memory cell, a second word line electrically connected to a second memory cell, and a voltage generation circuit configured to supply a first voltage to a first line electrically connected to the first word line and a second voltage to a second line electrically connected to the second word line. The voltage generation circuit includes a first regulator configured to output the first voltage to the first line and output a first signal according to the first voltage, a second regulator configured to output the second voltage to the second line and output a second signal according to the second voltage, and a switch circuit configured to open or close an electrically conductive path between the first line and the second line, based on at least one of the first signal and the second signal.

Abstract: A semiconductor storage device includes a first word line electrically connected to a first memory cell, a second word line electrically connected to a second memory cell, and a voltage generation circuit configured to supply a first voltage to a first line electrically connected to the first word line and a second voltage to a second line electrically connected to the second word line. The voltage generation circuit includes a first regulator configured to output the first voltage to the first line and output a first signal according to the first voltage, a second regulator configured to output the second voltage to the second line and output a second signal according to the second voltage, and a switch circuit configured to open or close an electrically conductive path between the first line and the second line, based on at least one of the first signal and the second signal.

Abstract: A semiconductor storage device includes a first word line electrically connected to a first memory cell, a second word line electrically connected to a second memory cell, and a voltage generation circuit configured to supply a first voltage to a first line electrically connected to the first word line and a second voltage to a second line electrically connected to the second word line. The voltage generation circuit includes a first regulator configured to output the first voltage to the first line and output a first signal according to the first voltage, a second regulator configured to output the second voltage to the second line and output a second signal according to the second voltage, and a switch circuit configured to open or close an electrically conductive path between the first line and the second line, based on at least one of the first signal and the second signal.

Abstract: A semiconductor storage device includes a first word line electrically connected to a first memory cell, a second word line electrically connected to a second memory cell, and a voltage generation circuit configured to supply a first voltage to a first line electrically connected to the first word line and a second voltage to a second line electrically connected to the second word line. The voltage generation circuit includes a first regulator configured to output the first voltage to the first line and output a first signal according to the first voltage, a second regulator configured to output the second voltage to the second line and output a second signal according to the second voltage, and a switch circuit configured to open or close an electrically conductive path between the first line and the second line, based on at least one of the first signal and the second signal.

Abstract: According to one embodiment, a solid state imaging device includes an image CDS processing unit that outputs a pixel signal based on a difference between a pixel voltage read from a pixel during a reset period and a pixel voltage read from the pixel during a signal read period, a temperature sensor that outputs a diode voltage when a diode current is changed, a temperature CDS processing unit that outputs a temperature measurement value based on a difference of the diode voltage at the time when the diode current is changed, and a timing generator that controls the reset period, the signal read period, and timing of changing the diode current of the temperature sensor.

Abstract: According to one embodiment, a solid state imaging device includes an image CDS processing unit that outputs a pixel signal based on a difference between a pixel voltage read from a pixel during a reset period and a pixel voltage read from the pixel during a signal read period, a temperature sensor that outputs a diode voltage when a diode current is changed, a temperature CDS processing unit that outputs a temperature measurement value based on a difference of the diode voltage at the time when the diode current is changed, and a timing generator that controls the reset period, the signal read period, and timing of changing the diode current of the temperature sensor.

Abstract: According to one embodiment, a solid state imaging device includes an imaging unit that outputs imaging data by performing an imaging operation, a temperature sensor that outputs a diode voltage according to a diode current, and an output circuit that shares a part of a circuit with the imaging unit and outputs temperature data based on the diode voltage outputted from the temperature sensor in the same semiconductor chip.

Abstract: An adhesive for a porous material is made of a curing agent composition and a principal component including an epoxy resin. The curing agent composition for the epoxy resin adhesive includes a water-based polyaminoamide curing agent or a water-based polyamide curing agent, having both a hydrophilic group and lipophilic group, tertiary amine, and water. The water-based polyaminoamide curing agent or the water-based polyamide curing agent is a condensate which is produced via a condensation reaction of polyaminoamide or polyamide with a dimer acid or trimer acid. The adhesive for a porous material precluding formaldehyde indicates a long pot life while demonstrating high adhesion in a short period of time.

Abstract: According to one embodiment, a solid state imaging device includes an imaging unit that outputs imaging data by performing an imaging operation, a temperature sensor that outputs a diode voltage according to a diode current, and an output circuit that shares a part of a circuit with the imaging unit and outputs temperature data based on the diode voltage outputted from the temperature sensor in the same semiconductor chip.

Abstract: According to one embodiment, a solid state imaging device includes an image CDS processing unit that outputs a pixel signal based on a difference between a pixel voltage read from a pixel during a reset period and a pixel voltage read from the pixel during a signal read period, a temperature sensor that outputs a diode voltage when a diode current is changed, a temperature CDS processing unit that outputs a temperature measurement value based on a difference of the diode voltage at the time when the diode current is changed, and a timing generator that controls the reset period, the signal read period, and timing of changing the diode current of the temperature sensor.

Abstract: A semiconductor integrated circuit device includes a first fuse circuit, a second fuse circuit, and a control signal generating circuit which sends a first control signal and executes program such that the resistance value of the first fuse circuit becomes greater than the resistance value of the second fuse circuit, and sends a second control signal and executes reprogram such that the resistance value of the second fuse circuit becomes greater than the resistance value of the first fuse circuit.

Abstract: The present inventors discovered that knockout mice whose S1-5 gene function is lost develop age-related diseases or symptoms. In such knockout mice, bone mineral content, bone mineral density, and bone strength were found to be decreased, and the number of osteoclasts in bone tissues was found to be increased. Analysis of osteoclast-forming ability using bone marrow cells derived from the knockout mice revealed that osteoclast-forming ability is enhanced and osteoclasts are larger in the knockout mice than in wildtype mice. When purified S1-5 protein was added to this in vitro system, osteoclast-forming ability was inhibited. Furthermore, administration of purified S1-5 protein to osteoporotic model mice showed that this protein has the effect of improving osteoporosis. The above findings demonstrate that S1-5 protein is useful for treating and preventing age-related diseases such as osteoporosis.

Abstract: The present invention discloses a novel protein called Synoviolin and a gene that encodes it. This protein is expressed specifically by synovial tissue and also accompanies the presence of an auto-antibody that recognizes this protein in rheumatoid arthritis (RA) patients. The protein according to the present invention and its antibody can be expected to be used as specific diagnostic markers for RA. In addition, the gene or protein according to the present invention may be used to permit the screening of drugs to treat RA. Moreover, the present invention provides synoviolin gene transgenic animals. The transgenic animals according to the present invention can be used as RA model animals in the development of pharmaceuticals to treat RA.

Abstract: The present inventors discovered that knockout mice whose S1-5 gene function is lost develop age-related diseases or symptoms. Histological analysis in such knockout mice revealed that bone mineral content, bone mineral density, and bone strength were decreased, and the number of osteoclasts in bone tissues was increased. Analysis of osteoclast-forming ability using bone marrow cells derived from the knockout mice revealed that osteoclast-forming ability is enhanced and osteoclasts are larger in the knockout mice than in wildtype mice. When purified S1-5 protein was added to this in vitro system, osteoclast-forming ability was inhibited.

Abstract: The present invention provides a decoy nucleic acid for the Synoviolin gene promoter. Also provided is the decoy nucleic acid can inhibit the promoter activity by binding to the transcription factor of the Synoviolin gene promoter. It also provides a decoy nucleic acid as expressed in (a) a decoy nucleic acid consisting of a nucleotide sequence as shown in SEQ ID NO: 11 or 12; and it also provides (b) a decoy nucleic acid consisting of a nucleotide sequence as shown in SEQ ID NO: 11 or 12 having deletion, substitution or addition of one or several nucleotides and has the function of inhibiting Synoviolin gene promoter activity.

Abstract: A semiconductor integrated circuit device includes a first fuse circuit, a second fuse circuit, and a control signal generating circuit which sends a first control signal and executes program such that the resistance value of the first fuse circuit becomes greater than the resistance value of the second fuse circuit, and sends a second control signal and executes reprogram such that the resistance value of the second fuse circuit becomes greater than the resistance value of the first fuse circuit.

Abstract: Inhibition of synoviolin function was found to activate the cancer-suppressing protein p53. Substances inhibiting the function of synoviolin are useful as cancer therapeutic agents. The inhibition of synoviolin function was also found to lead to the inhibition of p53 ubiquitination, increased activity of p53 phosphorylation proteins, and the like. Based on these findings, the present invention provides methods capable of efficiently screening for cancer therapeutic agents. Further, it was also found that regulation of the autoubiquitination of synoviolin protein suppresses the proliferation of rheumatoid arthritis synovial cells. Substances regulating the autoubiquitination of synoviolin protein are useful as anti-rheumatic agents. Moreover, the present invention provides methods of efficiently screening for anti-rheumatic agents.

Abstract: The present invention relates to an antibody against synoviolin or a fragment thereof for providing a monoclonal antibody capable of recognizing a part of synoviolin, which monoclonal antibody is capable of inhibiting the auto-ubiquitination of synoviolin.

Abstract: The present invention relates to an assay method for determining a auto-ubiquitination activity of synoviolin, comprising reacting synoviolin and ubiquitin in a reaction system containing them and determining an amount of ubiquitin binding to synoviolin, to a method of screening a substance capable of regulating such an activity, and to a kit for auto-ubiquitination assay of synoviolin.

Abstract: The present invention provides a promoter of the synoviolin gene comprising at least the nucleotide sequence of nucleotides 2120-2130 in the nucleotide sequence represented by SEQ ID: NO 1 or 2, or comprising at least the nucleotide sequence of the region of nucleotides 1-2201, 969-2201, 1142-2201, 1699-2201, 1880-2201, 2002-2201, 2094-2201 or 2118-2201 in the nucleotide sequence represented by SEQ ID: NO 1 or 2;or a method for regulating transcription activity characterized in that the activity of the promoter is inhibited or enhanced.