Abstract: A cylindrical roller bearing includes an outer ring having, on an inner circumferential surface, an outer ring raceway and a pair of outer ring ribs which are provided on both sides of the outer ring raceway in an axial direction, an inner ring having, on an outer circumferential surface, an inner ring raceway and an inner ring rib which is provided on one side of the inner ring raceway in the axial direction, and a plurality of cylindrical rollers disposed between the outer ring raceway and the inner ring raceway. A radial height of the outer ring rib is greater than a radial height of the inner ring rib, and a radial clearance between the outer ring rib and the inner ring rib is set to be equal to or less than 2 mm.

Abstract: A diesel particulate defuser (DPD) for collecting particulate matter (PM) in exhaust gas is connected to an exhaust pipe of a diesel engine, and when the amount of PM in the DPD becomes equal to or greater than a predetermined amount, the exhaust gas temperature of the diesel engine is increased by performing exhaust pipe injection and DPD is automatically regenerated. In such an exhaust gas purification system, an exhaust gas temperature during DPD regeneration in automatic regeneration is detected, a difference between the detected exhaust gas temperature and a target regeneration temperature is determined, and in a case where an exhaust pipe injection amount is PID controlled based on the difference, when a transition is made from the traveling automatic regeneration to the idle automatic regeneration conducted during a stop, an integral control term in the PID control is reset to zero to control the exhaust pipe injection amount.

Abstract: When a diesel particulate diffuser (“DPD”) of a vehicle traveling in a normal drive mode in the upland area is to be automatically regenerated by raising a temperature of exhaust gas from an engine, an exhaust gas purification system determines an upland full-load injection quantity from the atmospheric pressure in the upland area and an engine speed while the vehicle is in motion and drives the vehicle with the injection quantity determined. The system determines, during the regeneration mode, an upland drive regeneration injection quantity obtained by decreasing the upland full-load injection quantity on the basis of a quantity required for the post-injection. The injection quantity is gradually decreased from the upland full-load injection quantity to the upland regeneration drive injection quantity when the vehicle shifts from the normal drive mode in the upland area to the upland regeneration mode, so that the decreased quantity is used for the post-injection.

Abstract: A diesel particulate defuser (DPD) for collecting particulate matter (PM) in exhaust gas is connected to an exhaust pipe of a diesel engine, and when the amount of PM in the DPD becomes equal to or greater than a predetermined amount, the exhaust gas temperature of the diesel engine is increased by performing exhaust pipe injection and DPD is automatically regenerated. In such an exhaust gas purification system, an exhaust gas temperature during DPD regeneration in automatic regeneration is detected, a difference between the detected exhaust gas temperature and a target regeneration temperature is determined, and in a case where an exhaust pipe injection amount is PID controlled based on the difference, when a transition is made from the traveling automatic regeneration to the idle automatic regeneration conducted during a stop, an integral control term in the PID control is reset to zero to control the exhaust pipe injection amount.

Abstract: When a diesel particulate diffuser (“DPD”) of a vehicle traveling in a normal drive mode in the upland area is to be automatically regenerated by raising a temperature of exhaust gas from an engine, an exhaust gas purification system determines an upland full-load injection quantity from the atmospheric pressure in the upland area and an engine speed while the vehicle is in motion and drives the vehicle with the injection quantity determined. The system determines, during the regeneration mode, an upland drive regeneration injection quantity obtained by decreasing the upland full-load injection quantity on the basis of a quantity required for the post-injection. The injection quantity is gradually decreased from the upland full-load injection quantity to the upland regeneration drive injection quantity when the vehicle shifts from the normal drive mode in the upland area to the upland regeneration mode, so that the decreased quantity is used for the post-injection.

Abstract: In a method for setting appropriate initial-failure screening conditions when mass-producing semiconductor devices of multiple types, devices of each type being manufactured in a small number, the step of subjecting products of every type to an acceleration test is excluded, and instead, the failure ratio on the market of semiconductor devices of each type is estimated using a testing semiconductor device. Specifically, {circle around (1)} first, all types of semiconductor devices to be developed and mass-produced are classified into several groups. {circle around (2)} A test semiconductor device is developed which has the same number of elements, the same gate area, the same multi-layer wiring length and the same number of contact holes as the average number of elements, the average gate area, the average wiring length and the average number of contact holes of the semiconductor devices included in one of the type groups, respectively.

Abstract: In a method for setting appropriate initial-failure screening conditions when mass-producing semiconductor devices of multiple types, devices of each type being manufactured in a small number, the step of subjecting products of every type to an acceleration test is excluded, and instead, the failure ratio on the market of semiconductor devices of each type is estimated using a testing semiconductor device. Specifically, {circle around (1)} first, all types of semiconductor devices to be developed and mass-produced are classified into several groups. {circle around (2)} A test semiconductor device is developed which has the same number of elements, the same gate area, the same multi-layer wiring length and the same number of contact holes as the average number of elements, the average gate area, the average wiring length and the average number of contact holes of the semiconductor devices included in one of the type groups, respectively.

Abstract: A method of manufacturing semiconductor devices according to the present invention includes the steps of forming an element isolation region on the main surface of a semiconductor substrate of a first conductivity type, forming a high impurity concentration layer of a second conductivity type in the surface area of a portion of the semiconductor substrate defined by the element isolation region, and forming a first insulation film on the entire surface of the resultant semiconductor structure. Thereafter, a contact hole is formed in the first insulation film which is formed on the high impurity concentration layer, a semiconductor layer containing an impurity of the same conductivity type as the high impurity concentration layer is formed on the first insulation film, and a second insulation film is formed on the semiconductor layer.