Abstract: A lamp for heating is composed of a heat dissipation substrate made of metal, an insulating layer disposed on the heat dissipation substrate, a plurality of wiring patterns disposed on the insulating layer, a plurality of light source elements disposed on the plurality of wiring patterns on a one-to-one basis, a joining material electrically joining each of the plurality of wiring patterns and each of the plurality of light source elements, and a metal wiring electrically connecting each adjacent pair of the plurality of light source elements.

Abstract: A light-emitting device including a solid-state light source that emits light having a peak wavelength in the range of 480 nm or less and a fluorescent film that covers the solid-state light source and includes at least one kind of phosphor, wherein the fluorescent film includes at least one kind of near-infrared phosphor that is excited by light from the solid-state light source, has a peak wavelength in the range exceeding 700 nm, and has an emission spectrum with a full width at half maximum of 100 nm or more in a range including the peak wavelength.

Abstract: A broadband light-emitting device is composed of a substrate, a solid light source that is installed on a front face of the substrate and emits light at an upper face thereof, a near-infrared fluorescent material disposed in direct contact with the front face of the substrate in the vicinity of the solid light source, and a visible light fluorescent material disposed on a region ranging from the upper face of the solid light source to an upper face of the near-infrared fluorescent material. Besides, the near-infrared fluorescent material contains fluorescent particles exhibiting fluorescence in a near-infrared wavelength band with a peak wavelength of 700 nm and a wavelength width at half maximum of 100 nm or greater.

Abstract: A broadband light-emitting device is composed of a substrate, a solid light source that is installed on a front face of the substrate and emits light at an upper face thereof, a near-infrared fluorescent material disposed in direct contact with the front face of the substrate in the vicinity of the solid light source, and a visible light fluorescent material disposed on a region ranging from the upper face of the solid light source to an upper face of the near-infrared fluorescent material. Besides, the near-infrared fluorescent material contains fluorescent particles exhibiting fluorescence in a near-infrared wavelength band with a peak wavelength of 700 nm and a wavelength width at half maximum of 100 nm or greater.

Abstract: A multi-wavelength light-emitting diode epitaxial structure comprises of a substrate and at least three light-emitting elements, wherein the light-emitting elements are sequentially stacked on the substrate. For each two adjacent light-emitting elements, the light-emitting element disposed closer to the light-exiting surface has a higher bandgap than that of the light-emitting element disposed farther from the light-exiting surface. Each of the light-emitting elements comprises of an active layer and two cladding layers disposed on two opposite sides of the active layer, and each active layer includes a multiple quantum well structure. Cladding layers of different refractive indexes are arranged incrementally from the substrate to the light-exiting surface. Any given two adjacent cladding layers from two light-emitting elements have a combined thickness of 1 ?m or less. The emission wavelengths of the light-emitting elements are ultraviolet or infrared bands.

Abstract: A light-emitting device including a solid-state light source that emits light having a peak wavelength in the range of 480 nm or less and a fluorescent film that covers the solid-state light source and includes at least one kind of phosphor, wherein the fluorescent film includes at least one kind of near-infrared phosphor that is excited by light from the solid-state light source, has a peak wavelength in the range exceeding 700 nm, and has an emission spectrum with a full width at half maximum of 100 nm or more in a range including the peak wavelength.

Abstract: A laser beam is irradiated onto a surface of FRP to remove thermosetting resin in an irradiated position of the laser beam such that fiber material contained in the FRP is exposed.

Abstract: An infrared lamp 100 is composed of an LED 110 that emits infrared light and a cut filter 120 that transmits a part of the light from the LED 110. And a peak wavelength of the light emitted from the LED 110 in the lighting starting stage is set to be shorter than a cut-on wavelength of the cut filter 120.

Abstract: The laser irradiation device irradiates a laser beam at intervals of predetermined time. At one time of irradiation, the laser beam has a waveform composed of a former portion and a latter portion. In the former portion, an increase rate of irradiation intensity per unit time is maximized on an outset of irradiation and is gradually reduced as the irradiation intensity approaches a maximum. In the latter portion, a reduction rate of irradiation intensity per unit time is maximized after the former portion and is gradually reduced as the irradiation intensity approaches a baseline current.

Abstract: A multi-wavelength light-emitting diode epitaxial structure comprises of a substrate and at least three light-emitting elements, wherein the light-emitting elements are sequentially stacked on the substrate. For each two adjacent light-emitting elements, the light-emitting element disposed closer to the light-exiting surface has a higher bandgap than that of the light-emitting element disposed farther from the light-exiting surface. Each of the light-emitting elements comprises of an active layer and two cladding layers disposed on two opposite sides of the active layer, and each active layer includes a multiple quantum well structure. Cladding layers of different refractive indexes are arranged incrementally from the substrate to the light-exiting surface. Any given two adjacent cladding layers from two light-emitting elements have a combined thickness of 1 ?m or less. The emission wavelengths of the light-emitting elements are ultraviolet or infrared bands.

Abstract: An LED lamp for heating includes a substrate and a plurality of LEDs. The LEDs are mounted on a surface of the substrate.

Abstract: An infrared lamp 100 is composed of an LED 110 that emits infrared light and a cut filter 120 that transmits a part of the light from the LED 110. And a peak wavelength of the light emitted from the LED 110 in the lighting starting stage is set to be shorter than a cut-on wavelength of the cut filter 120.

Abstract: An LED lamp includes a plurality of LEDs and a pillar that is defined by a polygonal cross-sectional shape and includes a plurality of lateral surfaces on which the plurality of LEDs are disposed. A pillar radius ratio is set to fall in a range of greater than or equal to 3.73% and less than or equal to 18.25%. The pillar radius ratio is defined as a dimensional ratio of a pillar radius to a radius of an opening of a reflector made in shape of a bowl. The pillar radius is defined as a distance from a center point of the pillar to each of the plurality of lateral surfaces.

Abstract: A light emitting diode lamp is composed of a light emitting diode, a band-pass filter and a light angle adjuster. The filter has a light cutoff function to cut off a light ray with a specific wavelength. The light angle adjuster allows the light rays emitted from the diode to be incident on the filter at incident angles of less than or equal to a maximum incident angle up to which the filter is capable of exerting the light cutoff function. The light angle adjuster is a reflector. The diode is mounted to a bottom portion. The filter is mounted to an opening. On an imaginary cross section including the optical axis, an angle formed between the optical axis and a straight line is less than or equal to the maximum incident angle, the straight line connects the emission center and an edge of the opening.

Abstract: An LED lamp includes a plurality of LEDs and a pillar that is defined by a polygonal cross-sectional shape and includes a plurality of lateral surfaces on which the plurality of LEDs are disposed. A pillar radius ratio is set to fall in a range of greater than or equal to 3.73% and less than or equal to 18.25%. The pillar radius ratio is defined as a dimensional ratio of a pillar radius to a radius of an opening of a reflector made in shape of a bowl. The pillar radius is defined as a distance from a center point of the pillar to each of the plurality of lateral surfaces.

Abstract: A light emitting diode lamp is composed of a light emitting diode, a band-pass filter and a light angle adjuster. The filter has a light cutoff function to cut off a light ray with a specific wavelength. The light angle adjuster allows the light rays emitted from the diode to be incident on the filter at incident angles of less than or equal to a maximum incident angle up to which the filter is capable of exerting the light cutoff function. The light angle adjuster is a reflector. The diode is mounted to a bottom portion. The filter is mounted to an opening. On an imaginary cross section including the optical axis, an angle formed between the optical axis and a straight line is less than or equal to the maximum incident angle, the straight line connects the emission center and an edge of the opening.

Abstract: A light emitting diode lamp is composed of a reflective mirror, a pillar and a plurality of light emitters disposed in radial arrangement about a focal point of the reflective mirror on the surface of the pillar. Each of the plurality of light emitters is composed of a light emitting diode and a lens forming a virtual image in a position of the focal point located behind the light emitting diode. Additionally, a plurality of light emitting diode elements composing the light emitting diode in each of the plurality of light emitters emit light rays with the same wavelength, and the light emitting diodes in the plurality of light emitters emit the light rays with at least two types of wavelength.

Abstract: A method for lighting a high-pressure discharge lamp that is configured to change a power to be supplied to the high-pressure discharge lamp in accordance with a luminance parameter of an image content is disclosed. In the method, halogen is encapsulated in an internal space of an arc tube part of the high-pressure discharge lamp with an excessive volume with respect to a capacity of the internal space such that a halogen cycle is established when part of mercury deposits without vaporizing, and the internal space is configured to be kept at a higher temperature than a blackening temperature that is lower than a deposition temperature of the mercury and causes remarkable blackening on an inner wall of the arc tube part.

Abstract: A lighting device for a high-pressure discharge lamp comprises a power supply circuit configured to supply an alternating current to the high-pressure discharge lamp so as to light the high-pressure discharge lamp, and to increase a power to be supplied to the high-pressure discharge lamp and reduce a frequency of the alternating current when an inter-electrode voltage of the high-pressure discharge lamp reaches a predetermined inter-electrode voltage lower limit.

Abstract: The present high-pressure discharge lamp is composed of an arc tube part having an internal space, a pair of tungsten electrodes disposed in opposition to each other within the internal space, and mercury and halogen encapsulated in the internal space. The halogen is excessively encapsulated into the internal space relatively to the capacity of the internal space so as to establish an appropriate halogen cycle when the mercury partially deposits without evaporating.