Abstract: In some aspects, an ion implantation system is disclosed that includes an ion source for generating a ribbon ion beam and at least one corrector device for adjusting the current density of the ribbon ion beam along its longitudinal dimension to ensure that the current density profile exhibits a desired uniformity. The ion implantation system can further include other components, such as an analyzer magnet, and electrostatic bend and focusing lenses, to shape and steer the ion beam to an end station for impingement on a substrate. In some embodiments, the present teachings allows the generation of a nominally one-dimensional ribbon beam with a longitudinal size greater than the diameter of a substrate in which ions are implanted with a high degree of longitudinal profile uniformity.

Abstract: In some aspects, an ion implantation system is disclosed that includes an ion source for generating a ribbon ion beam and at least one corrector device for adjusting the current density of the ribbon ion beam along its longitudinal dimension to ensure that the current density profile exhibits a desired uniformity. The ion implantation system can further include other components, such as an analyzer magnet, and electrostatic bend and focusing lenses, to shape and steer the ion beam to an end station for impingement on a substrate. In some embodiments, the present teachings allows the generation of a nominally one-dimensional ribbon beam with a longitudinal size greater than the diameter of a substrate in which ions are implanted with a high degree of longitudinal profile uniformity.

Abstract: A repeller structure is provided in a plasma generating chamber of an ion source facing a cathode that emits electrons for ionizing a source gas in the plasma generating chamber to generate a plasma. The repeller structure reflects the ions toward the cathode. The repeller structure includes a sputtering target that is sputtered by the plasma to emit predetermined ions, the sputtering target including a through hole that connects a sputtering surface and a back surface of the sputtering target; and an electrode body that is inserted in the through hole, the electrode body including a repeller surface that is exposed to the sputtering surface side through the through hole.

Abstract: A plasma generator generates a plasma by ionizing a gas with a high-frequency discharge in a plasma generating chamber so that electrons from the plasma are emitted outside the plasma generator through an electron emitting hole. The plasma generator includes an antenna that is provided in the plasma generating chamber and that emits a high-frequency wave, and an antenna cover that is made of an insulating material and that covers an entire body of the antenna. A plasma electrode having the electron emitting hole is made of a conductive material. A frame cover with a protrusion ensures conductivity by preventing an insulating material from accumulating on a surface of the plasma electrode on a plasma side in sputtering by the plasma.

Abstract: A plasma generator generates a plasma by ionizing a gas with a high-frequency discharge in a plasma generating chamber so that electrons from the plasma are emitted outside the plasma generator through an electron emitting hole. The plasma generator includes an antenna that is provided in the plasma generating chamber and that emits a high-frequency wave, and an antenna cover that is made of an insulating material and that covers an entire body of the antenna. A plasma electrode having the electron emitting hole is made of a conductive material. A frame cover with a protrusion ensures conductivity by preventing an insulating material from accumulating on a surface of the plasma electrode on a plasma side in sputtering by the plasma.

Abstract: A plasma generator generates a plasma by ionizing a gas with a high-frequency discharge in a plasma generating chamber so that electrons from the plasma are emitted outside the plasma generator through an electron emitting hole. The plasma generator includes an antenna that is provided in the plasma generating chamber and that emits a high-frequency wave, and an antenna cover that is made of an insulating material and that covers an entire body of the antenna. A plasma electrode having the electron emitting hole is made of a conductive material. A frame cover with a protrusion ensures conductivity by preventing an insulating material from accumulating on a surface of the plasma electrode on a plasma side in sputtering by the plasma.

Abstract: An ion implanting apparatus includes: an electrostatic accelerating tube for causing an ion beam extracted from an ion source to have a desirable energy, and deflecting the ion beam to be incident on a target, the electrostatic accelerating tube including deflecting electrodes provided to interpose the ion beam therebetween. The deflecting electrodes include a first deflecting electrode and a second deflecting electrode to which different electric potentials from each other are set. The second deflecting electrode is provided on a side where the ion beam is to be deflected and includes an upstream electrode provided on an upstream side of the ion beam and a downstream electrode provided apart from the upstream electrode toward a downstream side. An electric potential of the upstream electrode and an electric potential of the downstream electrode are independently set from each other.

Abstract: An ion source includes a plasma generating chamber into which an ionization gas containing fluorine is introduced, a hot cathode provided on one side in the plasma generating chamber, an opposing reflecting electrode which is provided on other side in the plasma generating chamber and reflects electrons when a negative voltage is applied from a bias power supply to the opposing reflecting electrode, and a magnet for generating a magnetic field along a line, which connects the hot cathode and the opposing reflecting electrode, in the plasma generating chamber. The opposing reflecting electrode is formed of an aluminum containing material.

Abstract: A plasma generator generates a plasma by ionizing a gas with a high-frequency discharge in a plasma generating chamber so that electrons from the plasma are emitted outside the plasma generator through an electron emitting hole. The plasma generator includes an antenna that is provided in the plasma generating chamber and that emits a high-frequency wave, and an antenna cover that is made of an insulating material and that covers an entire body of the antenna. A plasma electrode having the electron emitting hole is made of a conductive material. A frame cover with a protrusion ensures conductivity by preventing an insulating material from accumulating on a surface of the plasma electrode on a plasma side in sputtering by the plasma.

Abstract: An ion implanting apparatus includes: an electrostatic accelerating tube for causing an ion beam extracted from an ion source to have a desirable energy, and deflecting the ion beam to be incident on a target, the electrostatic accelerating tube including deflecting electrodes provided to interpose the ion beam therebetween. The deflecting electrodes include a first deflecting electrode and a second deflecting electrode to which different electric potentials from each other are set. The second deflecting electrode is provided on a side where the ion beam is to be deflected and includes an upstream electrode provided on an upstream side of the ion beam and a downstream electrode provided apart from the upstream electrode toward a downstream side. An electric potential of the upstream electrode and an electric potential of the downstream electrode are independently set from each other.

Abstract: A repeller structure is provided in a plasma generating chamber of an ion source facing a cathode that emits electrons for ionizing a source gas in the plasma generating chamber to generate a plasma. The repeller structure reflects the ions toward the cathode. The repeller structure includes a sputtering target that is sputtered by the plasma to emit predetermined ions, the sputtering target including a through hole that connects a sputtering surface and a back surface of the sputtering target; and an electrode body that is inserted in the through hole, the electrode body including a repeller surface that is exposed to the sputtering surface side through the through hole.

Abstract: An extraction electrode of an ion source is dividedly configured by a first extraction electrode and a second extraction electrode. DC power supplies which form a potential difference between the electrodes, a camera which takes an image of the ion beam to output image data of the ion beam, and a rear-stage beam instrument which measures the beam current of the ion beam that has passed through the analysis slit are disposed.

Abstract: An ion source includes a plasma generating chamber into which an ionization gas containing fluorine is introduced, a hot cathode provided on one side in the plasma generating chamber, an opposing reflecting electrode which is provided on other side in the plasma generating chamber and reflects electrons when a negative voltage is applied from a bias power supply to the opposing reflecting electrode, and a magnet for generating a magnetic field along a line, which connects the hot cathode and the opposing reflecting electrode, in the plasma generating chamber. The opposing reflecting electrode is formed of an aluminum containing material.

Abstract: An extraction electrode of an ion source is dividedly configured by a first extraction electrode and a second extraction electrode. DC power supplies which form a potential difference between the electrodes, a camera which takes an image of the ion beam to output image data of the ion beam, and a rear-stage beam instrument which measures the beam current of the ion beam that has passed through the analysis slit are disposed.