Abstract: There is provided a semiconductor device including a substrate and a semiconductor film deposited on the substrate, characterized in that the semiconductor film has a laterally grown crystal having an end with a surface projection height smaller than the thickness of the semiconductor film. There are also provided a semiconductor device fabrication method and apparatus utilizing a method and apparatus for fabricating the semiconductor device, that is capable of reducing a surface projection height or a ridge formed in a last region in repeating laser exposure in the SLS method, and a semiconductor device fabricated thereby.

Abstract: A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.

Abstract: A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.

Abstract: An emissive element array of a plurality of organic EL elements is arranged linearly on a single-crystal silicon substrate or polycrystalline silicon substrate with a drive circuit including an element switching its respective emissive element. The organic EL emissive elements have an edge emitting structure utilizing light emitted in an edge direction perpendicular to the direction of deposition of electrode layers and organic compound layers, and is constructed such that the emitting area of one emisive element, S, as viewed in the direction of deposition, and the period of emissive elements disposed side by side, d, have the relationship of S>d2. In this way, organic EL techniques can be applied to provide the required amount of light exposure and to produce an exposure device that is small and inexpensive.

Abstract: In a method of manufacturing a crystallized semiconductor device of the present invention, a thermal diffusion layer (1) having higher thermal conductivity than that of a substrate (4) is formed on a surface of a semiconductor layer (2), and then laser light is applied to the semiconductor layer (2) from above the thermal diffusion layer (1). As a result, it becomes possible to manufacture the crystallized semiconductor device in which a crystal is longer than that of a conventional arrangement. According to the present invention, it is possible to provide the crystallized semiconductor device having the semiconductor layer in which the size of the crystal grain is larger than that of the conventional arrangement.

Abstract: A fabrication method of a crystallized semiconductor thin film is such that: by performing pulse irradiation of energy beams in a minute slit shape to a semiconductor thin film (5), the semiconductor thin film (5) of an region to which the energy beams are irradiated is fused and solidified over the whole area in a thickness direction so as to be crystallized, a main beam (6) and a sub beam (7), having smaller energy per unit area than that of the main beam (6), which adjoins the main beam (6), being irradiated to the semiconductor thin film (5).

Abstract: A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.

Abstract: A fabrication method of a semiconductor thin film including a polycrystalline semiconductor region by irradiating a precursor semiconductor thin film substrate with at least two types of laser beams, and melting-recrystallizing the precursor semiconductor thin film, wherein the radiation timing or power density of the at least two types of laser beams is controlled according to change in reflectance of a site of the precursor semiconductor thin film substrate irradiated with a predetermined reference laser beam.

Abstract: A fabrication method of a semiconductor thin film including a polycrystalline semiconductor region by irradiating a precursor semiconductor thin film with at least two types of laser beams, and melting-recrystallizing the precursor semiconductor thin film, wherein the precursor semiconductor thin film is irradiated with a predetermined reference laser beam, and a radiation initiation time or power density of a laser beam is controlled according to change in reflectance of the site irradiated with the reference laser beam. A semiconductor thin film fabrication apparatus used in the fabrication method of present invention, wherein includes at least two light sources, a sensing unit, and a control unit. The crystals formed have no difference in the length of crystal caused by variation in the energy of each radiation.

Abstract: An emissive element array of a plurality of organic EL elements is arranged linearly on a single-crystal silicon substrate or polycrystalline silicon substrate with a drive circuit including an element switching its respective emissive element. The organic EL emissive elements have an edge emitting structure utilizing light emitted in an edge direction perpendicular to the direction of deposition of electrode layers and organic compound layers, and is constructed such that the emitting area of one emissive element, S, as viewed in the direction of deposition, and the period of emissive elements disposed side by side, d, have the relationship of S>d2. In this way, organic EL techniques can be applied to provide the required amount of light exposure and to produce an exposure device that is small and inexpensive.

Abstract: A crystal growth apparatus for a semiconductor thin film includes a first radiator for selectively radiating first laser light to the semiconductor thin film for allowing semiconductor thin film to crystallize through a super-lateral growth method and a second radiator for selectively radiating second laser light, which is transmitted through the semiconductor thin film better than the first laser light, to the glass substrate at a position corresponding to an area including a crystallization target area of semiconductor thin film. The second radiator includes a laser oscillator for producing the second laser light, an aperture stop plate being radiated with the second laser light to form a desired aperture image, and an objective lens for forming the aperture image on the main surface of the glass substrate. Thus, a polycrystalline semiconductor thin film having large crystal grains can easily and stably be obtained.

Abstract: An optical disk including concentric or spiral grooves, a first series of pits formed in the interrupted portions, and a second series of pits formed in portions of lands. Both of the first and second series of pits represent address information. The portions of the lands and the interrupted portions of the grooves are located in different radial directions. With this arrangement, even when the optical disk has a reduced track pitch, accurate address information is obtained, achieving a high-density recording optical disk.

Abstract: An optical disk has address recording sections each of which has a wobbled part of one of side walls of a groove. Each address recording section is formed by providing convexes of a groove in an adjacent land so as to widen the groove. With the wobbles thus provided in a concavo-convex form, address information is recorded. Besides, the address recording sections thus provided in the grooves are linearly disposed in radial directions of the optical disk. By thus arranging the optical disk on whose grooves and/or lands information is recorded, mixing of wobble frequency components in reproduced information signals does not occur, the sector method is applicable to the optical disk, and information signals of high quality can be obtained.

Abstract: An optical disc having a recording film formed on one surface of a plastics substrate transparent to light, a first protection film formed on the recording film, a moisture proof film formed on the other surface of the substrate, and a second protection film formed on the moisture proof film.

Abstract: An optical disk has address recording sections each of which has a wobbled part of one of side walls of a groove. Each address recording section is formed by providing convexes of a groove in an adjacent land so as to widen the groove. With the wobbles thus provided in a concavo-convex form, address information is recorded. Besides, the address recording sections thus provided in the grooves are linearly disposed in radial directions of the optical disk. By thus arranging the optical disk on whose grooves and/or lands information is recorded, mixing of wobble frequency components in reproduced information signals does not occur, the sector method is applicable to the optical disk, and information signals of high quality can be obtained.

Abstract: A deformable mirror includes a first base plate having a first reference surface, a transparent second base plate having a second reference surface opposed to the first reference surface, a flexible member disposed between the first base plate and the second base plate and having a reflective surface on a surface thereof, the flexible member being adapted to be fitted on the first reference surface or on the second reference surface, and a driver for fitting the flexible member on the first reference surface or on the second reference surface, wherein the flexible member is held between the first base plate and the second base plate, and the light rays to be reflected by the reflective surface are imparted with the first degree of spherical aberration or with the second degree of spherical aberration by fitting the flexible member on the first reference surface or on the second reference surface by the driver.

Abstract: An ink-jet head is provided with a container having an ink-discharge opening in its wall section; a structural element that has peripheral edges at least both ends in one direction of which are secured to the wall faces inside the container, that divides the inside of the container in a fluid-separated state, and that is allowed to be distorted; and a voltage-applying unit for applying a voltage to the structural element. The structural element is constituted of a piezoelectric material, and the shape of the structural element is changed in response to the voltage applied by the voltage-applying unit so that ink is allowed to discharge from the ink-discharge opening. Therefore, the above-mentioned arrangement makes it possible to provide a greater ink-discharging force and ink-discharging speed, while maintaining a small size of the head. Moreover, it is possible to provide an ink-jet head having a good discharging efficiency with long service life.