Abstract: The present disclosure generally relates to an epitaxial chamber for processing of semiconductor substrates. In one example, the epitaxial chamber has a chamber body assembly. The chamber body assembly includes a lower window and an upper window, wherein chamber body assembly, the lower window and the upper window enclose an internal volume. A susceptor assembly is disposed in the internal volume. The epitaxial chamber also has a plurality of temperature control elements. The plurality of temperature control elements include one or more of an upper lamp module, a lower lamp module, an upper heater, a lower heater, or a heated gas passage.

Abstract: A showerhead for a process chamber is provided including: a first portion that includes a plurality of gas inlets and a first plurality of gas outlets; and a second portion over the first portion, the second portion including a second plurality of gas outlets, wherein the plurality of gas inlets of the first portion are fluidly coupled to the second plurality of gas outlets of the second portion, the first plurality of gas outlets of the first portion are fluidly coupled to the plurality of gas inlets of the first portion, the second portion is transparent to infrared radiation and ultraviolet radiation, and the first portion is transparent to infrared radiation and opaque to ultraviolet radiation.

Abstract: A window component, a chamber, and a method of processing substrates are described herein. In one example, a semiconductor process chamber window component comprises a transparent quartz body. The body comprises a top surface, a bottom surface, a central portion disposed near a center axis of the body, and one or more fluid channels formed within the body. The one or more fluid channels are configured to flow a fluid from a first side of the body towards a second side of the body and the first side is disposed opposite the second side.

Abstract: The present disclosure relates to methods of adjusting uniformity for substrate processing, and related apparatus and systems, for semiconductor manufacturing. In one or more embodiments, a heating power applied to a set of one or more heat sources is adjusted by an adjustment factor. In one or more embodiments, a method of adjusting uniformity. The method includes scanning a sensor across one or more sections to take a plurality of readings, generating a signal profile including the plurality of readings, and analyzing the signal profile by comparing the signal profile to a range. The method includes adjusting one or more heating parameters if at least one portion of the signal profile is outside of the range. The adjusting includes identifying a set of one or more heat sources that correlate with the at least one portion of the signal profile, and adjusting a heating power by an adjustment factor.

Abstract: The present disclosure relates to methods of analyzing uniformity for substrate processing, and related apparatus and systems, for semiconductor manufacturing. In one or more embodiments, a non-uniformity is indicated, and the non-uniformity is a temperature non-uniformity and/or a physical non-uniformity. In one or more embodiments, a signal profile is accepted or rejected. In one or more embodiments, a method of analyzing uniformity for substrate processing applicable for semiconductor manufacturing includes heating an internal volume of a processing chamber using a target value. The method includes rotating a substrate support, and scanning, while rotating the substrate support, a sensor across one or more sections to take a plurality of readings. The method includes generating a signal profile including the plurality of readings, and analyzing the signal profile by comparing the signal profile to a range.

Abstract: The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.

Abstract: Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

Abstract: Embodiments described herein generally relate to highly reflective metallic alloys for components (such as chamber components) of semiconductor processing equipment, and related methods and processing chambers. In one or more embodiments, a processing chamber applicable for use in semiconductor manufacturing includes a chamber body having an internal volume, and one or more heat sources configured to provide heat to the internal volume. The processing chamber includes an upper window and a lower window. The processing chamber includes one or more chamber components positioned to reflect energy emitted from the one or more heat sources through at least one of the upper window or the lower window and into the internal volume, the one or more chamber components comprising a metallic alloy and one or more reflective surfaces having a surface roughness (Ra) that is 5.0 nanometer or less.

Abstract: An image recording apparatus includes a recording unit that records an image on a recording medium, a discharge unit configured to discharge the recording medium on which recording has been performed by the recording unit, a first conveying path for conveying the recording medium from the recording unit to the discharge unit, a heating unit configured to heat the recording medium on which recording has been performed by the recording unit and disposed on the first conveying path, and a second conveying path configured to branch off from the first conveying path at a branching portion between the heating unit and the discharge unit and configured to merge with the first conveying path between the recording unit and a stacking unit on the first conveying path.

Abstract: A current measurement device includes: four or more triaxial magnetic sensors arranged to have predefined positional relationships such that magnetism-sensing directions thereof are parallel to each other; and a calculator configured to calculate currents flowing through a pair of conductors to be measured, which are arranged in proximity to each other, based on detection results of the four or more triaxial magnetic sensors and the positional relationships between the four or more triaxial magnetic sensors, the currents flowing in mutually opposite directions.

Abstract: The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

Abstract: A light-emitting device includes a substrate comprising a base member, a first wiring, a second wiring, and a via hole; at least one light-emitting element electrically connected to and disposed on the first wiring; and a covering member having light reflectivity and covering a lateral surface of the light-emitting element and a front surface of the substrate. The base member defines a plurality of depressed portions separated from the via hole in a front view and opening on a back surface and a bottom surface of the base member. The substrate includes a third wiring covering at least one of inner walls of the plurality of depressed portions and electrically connected to the second wiring. A depth of each of the plurality of depressed portions defined from the back surface toward the front surface is larger on a bottom surface side than on an upper surface side of the base member.

Abstract: The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a susceptor, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. The susceptor includes a movement assembly. The movement assembly includes a bearing feedthrough assembly. The bearing feedthrough assembly is a ferrofluidic feedthrough assembly and functions as a ferrofluidic bearing. The bearing feedthrough assembly includes a shaft coupled to the support shaft. The shaft is rotated within the bearing feedthrough assembly. The bearing feedthrough assembly is combined with a first linear spline and a second linear spline.

Abstract: The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.

Abstract: A masking member includes: a masking main body that is formed of an elastic material and that closes an opening portion of a hollow member by being inserted into the opening portion; and a passage portion that is formed at the masking main body, that opens on an outer peripheral surface of the masking main body, and that connects an outside and an inside of the hollow member by at least a part of an opening at the outer peripheral surface being exposed to the outside of the hollow member in a case in which the masking main body, in a state of closing the opening portion, moves in a direction opposite from an insertion direction.

Abstract: A power transmission device is provided including: a base, provided with a pair of left and right drive pulleys; an intermediate member, rotatably supported by the base about a first axis; and a driven member, rotatably supported by the intermediate member about a second axis. A pair of left wires wound in opposite directions are fixed to the left drive pulley and the driven member. A pair of right wires wound in opposite directions to each other are fixed to the right drive pulley and the driven member. By the drive pulleys, when the driven member is rotated in the same direction about the second axis, torque in opposite directions about the first axis is applied to the driven member, and when the driven member is rotated in opposite directions about the second axis, torque in the same direction about the first axis is applied to the driven member.

Abstract: A light-emitting device includes a substrate comprising a base member, a first wiring, a second wiring, and a via hole; at least one light-emitting element electrically connected to and disposed on the first wiring; and a covering member having light reflectivity and covering a lateral surface of the light-emitting element and a front surface of the substrate. The base member defines a plurality of depressed portions separated from the via hole in a front view and opening on a back surface and a bottom surface of the base member. The substrate includes a third wiring covering at least one of inner walls of the plurality of depressed portions and electrically connected to the second wiring. A depth of each of the plurality of depressed portions defined from the back surface toward the front surface is larger on a bottom surface side than on an upper surface side of the base member.

Abstract: A coating on a processing chamber component includes a metallic bond layer deposited on a surface of the component. A thermal barrier layer is deposited on the bond layer. A substantially non-porous ceramic sealing layer is deposited on the thermal barrier layer. The sealing layer substantially conforms to irregularities of the surface of the thermal barrier layer. A chemistry of the sealing layer is selected for resistance to attack from halogen-containing chemicals.

Abstract: A coating on a processing chamber component includes a metallic bond layer deposited on a surface of the component. A thermal barrier layer is deposited on the bond layer. A substantially non-porous ceramic sealing layer is deposited on the thermal barrier layer. The sealing layer substantially conforms to irregularities of the surface of the thermal barrier layer. A chemistry of the sealing layer is selected for resistance to attack from halogen-containing chemicals.

Abstract: A light emitting device includes a substrate including first, second, third and fourth wiring portions on a top surface of a base member and arrayed in a first direction, and a connection wiring portion connecting the second and third wiring portions. The connection wiring portion includes first and second connection ends respectively connected with the second and third wiring portions, and a connection central portion connecting the first and second connection ends and having a maximum width in a second direction different from each of a maximum width of the first connection end and a maximum width of the second connection end. In the second direction, at least a part of the connection wiring portion has a width narrower than each of a maximum width of the second wiring portion and a maximum width of the third wiring portion.