Abstract: An oxygen saturation measuring device determines a first light projection timing and a second light projection timing based on a peak timing and a bottom timing of a third pulse wave signal corresponding to a light intensity of received light of reference light in one pulsation, causes the first light emitting element to project the red light at the first light projection timing, causes the second light emitting element to project the infrared light at the second light projection timing, and measures oxygen saturation of an artery based on a first pulse wave signal output from a light receiving element according to the red light projected at the first light projection timing and a second pulse wave signal output from the light receiving element according to the infrared light projected at the second light projection timing.

Abstract: The present disclosure relates to an oxygen saturation measuring device with a band wound on a wrist of a measurement subject; a first sensor portion attached to the band; and a notification portion.

Abstract: A three-dimensional measurement system projects patterned light onto a target object, images the target object from different viewpoints to obtain a first image and a second image, obtains first depth information using the first image with a spatially encoded pattern technique, defines a search range for a corresponding point based on parallax between the first image and the second image predicted from the first depth information, and obtains second depth information by performing stereo matching for the defined search range using the first image and the second image. The second depth information has a higher spatial resolution than the first depth information. The patterned light has a combined pattern combining a spatially encoded pattern including a plurality of unit elements arranged regularly and a random pattern including a plurality of random pieces arranged randomly. Each of the plurality of unit elements is an area corresponding to a depth value.

Abstract: An optical assembly (13) for a three-dimensional measurement device is equipped with: an optical lens (320) that forms a pair of conjugate planes having an optically conjugate relationship; an optical device (341) that is disposed on one of the pair of conjugate planes; a temperature sensor (354) for detecting the temperature of the optical lens (320); a heater (350) for heating the optical lens (320); and a control part that controls the operation of the heater (350) on the basis of the result of the detection made by the temperature sensor (354) such that the optical lens (320) reaches a constant temperature.

Abstract: A three-dimensional measurement system projects patterned light onto a target object, images the target object from different viewpoints to obtain a first image and a second image, obtains first depth information using the first image with a spatially encoded pattern technique, defines a search range for a corresponding point based on parallax between the first image and the second image predicted from the first depth information, and obtains second depth information by performing stereo matching for the defined search range using the first image and the second image. The second depth information has a higher spatial resolution than the first depth information. The patterned light has a combined pattern combining a spatially encoded pattern including a plurality of unit elements arranged regularly and a random pattern including a plurality of random pieces arranged randomly. Each of the plurality of unit elements is an area corresponding to a depth value.

Abstract: The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.

Abstract: The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.

Abstract: The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.

Abstract: The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.

Abstract: The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.

Abstract: The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.

Abstract: A pulsed laser oscillator includes at least one first electrooptical element that polarizes light according to an applied voltage and a voltage control unit that applies a voltage to the first electrooptical element and controls the voltage. The voltage control unit changes over time a voltage value applied to the first electrooptical element, to control a pulse width of laser light.

Abstract: A pulsed laser oscillator includes at least one first electrooptical element that polarizes light according to an applied voltage and a voltage control unit that applies a voltage to the first electrooptical element and controls the voltage. The voltage control unit changes over time a voltage value applied to the first electrooptical element, to control a pulse width of laser light.