Abstract: A device in which a plurality of pixels are arranged in a substrate is provided. Each of the plurality of pixels includes a portion, and an element configured to function as a light converging element and a color filter, the plurality of pixels include a first pixel and a second pixel arranged adjacent to each other, the element of the first pixel and the element of the second pixel transmit light components of different colors, respectively, and are in contact with each other, and a contact surface where the element of the first pixel and the element of the second pixel contact is tilted with respect to a normal direction of a surface of the substrate.

Abstract: A photoelectric conversion device including: a semiconductor layer having a first main surface and a second main surface and including a first photoelectric conversion element and a second photoelectric conversion element adjacent to each other; and an element isolation portion arranged to electrically isolate the first photoelectric conversion element and the second photoelectric conversion element, is provided. A cured product of a curable composition is arranged on the first main surface, a plurality of trenches extending from a surface of the cured product toward the first main surface are provided in the cured product, and the plurality of trenches include a first trench constituting a scattering diffraction structure arranged to overlap the first photoelectric conversion element, and a second trench constituting an isolation structure arranged to overlap the element isolation portion.

Abstract: A light emitting device includes a plurality of sub-pixels including first and second sub-pixels. The first sub-pixel includes a first reflecting member below a first lower electrode, and the second sub-pixel includes a second reflecting member below a second lower electrode. The device includes an insulating film arranged below the lower electrodes of the plurality of sub-pixels so as to cover the first reflecting member and the second reflecting member. The insulating film includes a first sub-wavelength structure arranged between the first reflecting member and the first lower electrode, and a second sub-wavelength structure arranged between the second reflecting member and the second lower electrode The first sub-wavelength structure and the second sub-wavelength structure have effective refractive indices different from each other.

Abstract: A method of processing a substrate having a first surface with an outer peripheral portion lower than a central portion and forming a second surface flatter than the first surface is provided. The method includes forming a planarization film on at least the outer peripheral portion by placing a curable composition on the substrate, bringing a superstrate into contact with the curable composition, and curing the curable composition, and executing CMP before or after the forming. The second surface is formed through the forming and the executing the CMP.

Abstract: An acoustic wave device includes a support including a support substrate with a thickness direction in a first direction, a piezoelectric layer on the support, and resonators each including a functional electrode provided to the piezoelectric layer. The support is provided with a hollow portion at a position overlapping at least a portion of each of the resonators in plan view in the first direction. The resonators include a first resonator and a second resonator adjacent to each other. A through hole reaching the hollow portion is provided to the piezoelectric layer between the first resonator and the second resonator.

Abstract: A conductive composition for electrode formation contains an organometallic compound containing a metal element, and an organic solvent. The conductive composition is substantially free of metal particles.

Abstract: An acoustic wave device includes a support including a support substrate with a thickness in a first direction, a piezoelectric layer on the support in the first direction on the support, and resonators each including a functional electrode on the piezoelectric layer in the first direction on the piezoelectric layer. The support includes space portions therein at positions where the functional electrodes at least partially overlap in a planar view in the first direction. The support includes a lead portion communicating with at least one of the space portions in a planar view in the first direction, at a position that does not overlap the space portion. At least one lead portion communicates with at least two of the space portions. The piezoelectric layer includes a through-hole penetrating the piezoelectric layer at a position overlapping the lead portion in a planar view in the first direction.

Abstract: An acoustic wave device includes a piezoelectric layer made of lithium niobate or lithium tantalate, and at least one pair of electrodes opposed to each other in a direction intersecting a thickness direction of the piezoelectric layer. When d is a thickness of the piezoelectric layer and p is a distance between centers of electrodes adjacent to each other in the at least one pair of electrodes, d/p is about 0.5 or less. The at least one pair of electrodes extend in a longitudinal direction and includes a first electrode and a second electrode with sectional shapes different from each other in any cross section in a direction orthogonal or substantially orthogonal to the longitudinal direction of the at least one pair of electrodes.

Abstract: An acoustic wave device includes a piezoelectric board including a piezoelectric layer with a first principal surface and a second principal surface opposed to each other, an intermediate layer on the first principal surface or the second principal surface of the piezoelectric layer, and a functional electrode on the intermediate layer. A material of the intermediate layer is a same type as a material of the piezoelectric layer, and an electromechanical coupling coefficient of the intermediate layer is smaller than an electromechanical coupling coefficient of the piezoelectric layer.

Abstract: An acoustic wave device includes a scandium-containing aluminum nitride film and electrodes on at least one of first and second principal surfaces of the scandium-containing aluminum nitride film. The scandium-containing aluminum nitride film includes areas in which a crystal axis is deviated with respect to remaining portions of the scandium-containing aluminum nitride film.

Abstract: An acoustic wave device includes a support substrate, a piezoelectric layer overlapping the support substrate viewed in a first direction, a functional electrode on at least a first main surface of the piezoelectric layer, and a wiring electrode connected to the functional electrode. A space is provided on a second main surface side opposite to the first main surface of the piezoelectric layer. The space is covered with the piezoelectric layer, the wiring electrode covers a portion of the functional electrode, and an air gap or an insulating film is provided between the functional electrode and the wiring electrode in a region where the functional electrode is covered with the wiring electrode.

Abstract: An acoustic wave device includes a piezoelectric layer and first and second electrodes facing each other in a direction intersecting a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave in a thickness-shear primary mode. A material of the piezoelectric layer is lithium niobate or lithium tantalate. At least a portion of each of the first and second electrodes is embedded in the piezoelectric layer.

Abstract: An acoustic wave device includes a piezoelectric film and an IDT electrode on the piezoelectric film. The IDT electrode includes first and second busbars, at least one first electrode finger, and at least one second electrode finger. When an overlap region is defined as a region in which the first and second electrode fingers overlap each other in an acoustic wave propagation direction, points A2, B2, C2, and D2, defined as follows, are all outside the cavity when, at the points A2, B2, C2, and D2, xa>about 25 ?m, ya>about 25 ?m, xb>about 25 ?m, yb>about 25 ?m, xc>about 25 ?m, yc>about 25 ?m, xd>about 25 ?m, and yd>about 25 ?m.

Abstract: An acoustic wave device includes a support with a thickness in a first direction, a piezoelectric layer in the first direction, and an interdigital transducer electrode in the first direction with first electrode fingers in a second direction, a first busbar electrode connected to the first electrode fingers, second electrode fingers in the second direction and facing corresponding ones of the first electrode fingers in a third direction, and a second busbar electrode connected to the second electrode fingers. The support has a hollow adjacent to the piezoelectric layer and at least partially overlapping the interdigital transducer electrode. The piezoelectric layer has a first through hole penetrating the piezoelectric layer between at least one first electrode finger and the second busbar electrode. The first through hole communicates with the hollow, has a length in the third direction, and overlaps a portion of a second electrode finger.

Abstract: An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, and an excitation electrode on the piezoelectric layer. A cavity portion is provided in the support and overlaps at least a portion of the excitation electrode. A portion of the piezoelectric layer that overlaps the cavity portion is a membrane portion. The membrane portion includes first and second directions orthogonal or substantially orthogonal to each other. The membrane portion includes a central portion in the center in the first direction, first and second portions facing each other across the central portion in the first direction, and an outer peripheral edge. At least a portion of the outer peripheral edge of the first and second portions of the membrane portion is located in an outer side portion in the second direction relative to the outer peripheral edge in the central portion.

Abstract: An acoustic wave device includes a support including a support substrate with a thickness in a first direction, a piezoelectric layer on the support in the first direction on the support, and resonators each including a functional electrode on the piezoelectric layer in the first direction on the piezoelectric layer. The support includes space portions therein at positions where the functional electrodes at least partially overlap in a planar view in the first direction. The support includes a lead portion communicating with at least one of the space portions in a planar view in the first direction, at a position that does not overlap the space portion. At least one lead portion communicates with at least two of the space portions. The piezoelectric layer includes a through-hole penetrating the piezoelectric layer at a position overlapping the lead portion in a planar view in the first direction.

Abstract: An acoustic wave device includes a support including a support substrate with a thickness direction in a first direction, a piezoelectric layer on the support, and resonators each including a functional electrode provided to the piezoelectric layer. The support is provided with a hollow portion at a position overlapping at least a portion of each of the resonators in plan view in the first direction. The resonators include a first resonator and a second resonator adjacent to each other. A through hole reaching the hollow portion is provided to the piezoelectric layer between the first resonator and the second resonator.

Abstract: An acoustic wave device includes a piezoelectric film and an IDT electrode on the piezoelectric film. The IDT electrode includes first and second busbars, at least one first electrode finger, and at least one second electrode finger. When an overlap region is defined as a region in which the first and second electrode fingers overlap each other in an acoustic wave propagation direction, points A2, B2, C2, and D2, defined as follows, are all outside the cavity when, at the points A2, B2, C2, and D2, xa>about 25 ?m, ya>about 25 ?m, xb>about 25 ?m, yb>about 25 ?m, xc>about 25 ?m, yc>about 25 ?m, xd>about 25 ?m, and yd>about 25 ?m.

Abstract: A ferrite sheet strip includes a strip shaped substrate and a plurality of ferrite sheet pieces provided on a surface of the substrate. The plurality of ferrite sheet pieces are aligned and spaced apart by a gap from one another along a longitudinal direction of the substrate. The gap extends at least partially so as not to be parallel to a lateral direction of the substrate.

Abstract: A bandpass filter is provided that includes series acoustic resonators and shunt acoustic resonators. The shunt acoustic resonators include a first transversely-excited film bulk acoustic resonators (XBAR) that includes a diaphragm comprising a portion of a piezoelectric layer that is over a cavity of the first XBAR and a first interdigital transducer (IDT) on a surface of the piezoelectric layer. The first XBAR is connected between (i) a node directly between a first series acoustic resonator of the plurality of series acoustic resonators and the input port, and (ii) a ground of the bandpass filter. The series and shunt acoustic resonators include one or more solidly-mounted XBARs that includes a portion of a second piezoelectric layer that is solidly mounted over a substrate with a Bragg reflector disposed therebetween.