Abstract: An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, a functional electrode on the piezoelectric layer, and first and second electrode films on the piezoelectric layer, facing each other, and having different electric potentials from each other. When a region between the first and second electrode films in a plan view is an inter-electrode film region, and a region overlapping with the first electrode film or the second electrode film in a plan view is an electrode film underlying region, a thickness of the piezoelectric layer in at least a portion of the inter-electrode film region is smaller than a thickness of the piezoelectric layer in the electrode film underlying region.

Abstract: An acoustic wave device includes a piezoelectric layer made of lithium niobate or lithium tantalate, and first and second electrodes opposed to each other in a direction that intersects with a thickness direction of the piezoelectric layer. The first and second electrodes are adjacent electrodes, and, when a thickness of the piezoelectric layer is d and a distance between centers of the first and second electrodes is p, d/p is less than or equal to about 0.5.

Abstract: An acoustic wave device includes a support with a thickness in a first direction, a piezoelectric layer in the first direction, and an interdigital transducer electrode in the first direction with first electrode fingers in a second direction, a first busbar electrode connected to the first electrode fingers, second electrode fingers in the second direction and facing corresponding ones of the first electrode fingers in a third direction, and a second busbar electrode connected to the second electrode fingers. The support has a hollow at least partially overlapping the interdigital transducer electrode. The piezoelectric layer has at least one first through hole penetrating the piezoelectric layer between at least one first electrode finger and the second busbar electrode. The first through hole communicates with the hollow, and overlaps an end portion of the at least one first electrode finger that is not connected to the first busbar electrode.

Abstract: An acoustic wave device includes a scandium-containing aluminum nitride film (ScAlN film), and an electrode on the ScAlN film. The ScAlN film includes at least one portion where a crystal orientation toward 90° from a crystal c-axis direction is rotated about 30°±5° or rotated about 15°±5°, the crystal c-axis direction being a film thickness direction of the ScAlN film or substantially a film thickness direction of the ScAlN film.

Abstract: An acoustic wave device includes a support substrate having a thickness in a first direction, a piezoelectric layer on the support substrate, and an interdigital transducer electrode on the piezoelectric layer and including first and second electrode fingers extending in a second direction crossing the first direction. The second electrode fingers face the first electrode fingers in a third direction orthogonal or substantially orthogonal to the second direction. The support substrate and the piezoelectric layer include a hollow therebetween at a position at least partially overlapping the interdigital transducer electrode in the first direction. At least one through hole penetrates the piezoelectric layer at a position not overlapping the interdigital transducer electrode in the first direction, and the through hole communicates with the hollow. A reinforcing support extends inside the hollow in a region overlapping the hollow and not overlapping the first and second electrode fingers.

Abstract: An acoustic wave device includes a support substrate having a thickness in a first direction, a piezoelectric layer on the support substrate, an interdigital transducer electrode on the piezoelectric layer and including first and second electrode fingers, the first electrode fingers extending in a second direction crossing the first direction, the second electrode fingers extending in the second direction and facing the first electrode fingers in a third direction orthogonal or substantially orthogonal to the second direction, and a reinforcing film on the piezoelectric layer. The support substrate and the piezoelectric layer include a hollow therebetween at a position overlapping the interdigital transducer electrode in the first direction. At least one through hole penetrates the piezoelectric layer at a position not overlapping the interdigital transducer electrode in the first direction, and the through hole communicates with the hollow. The reinforcing film overlaps the hollow in the first direction.

Abstract: A piezoelectric thin film includes a piezoelectric element and a substrate supporting the piezoelectric element. The piezoelectric element includes a piezoelectric thin film and first and second electrodes opposing each other with the piezoelectric thin film interposed therebetween. The piezoelectric thin film has a first-electrode-side content of each of aluminum and scandium higher than a second-electrode-side content thereof and a first-electrode-side content of nitrogen lower than a second-electrode-side content thereof.

Abstract: An acoustic wave device includes a piezoelectric layer made of lithium niobate or lithium tantalate, and first and second electrodes opposed to each other in a direction that intersects with a thickness direction of the piezoelectric layer. The first and second electrodes are adjacent electrodes, and, when a thickness of the piezoelectric layer is d and a distance between centers of the first and second electrodes is p, d/p is less than or equal to about 0.5.

Abstract: An acoustic wave device includes a piezoelectric board including a piezoelectric layer with a first principal surface and a second principal surface opposed to each other, an intermediate layer on the first principal surface or the second principal surface of the piezoelectric layer, and a functional electrode on the intermediate layer. A material of the intermediate layer is a same type as a material of the piezoelectric layer, and an electromechanical coupling coefficient of the intermediate layer is smaller than an electromechanical coupling coefficient of the piezoelectric layer.

Abstract: A lithographic process for the production of a semiconductor device has recently caused a problem in terms of generation of a sublime component (sublimate) derived from a low-molecular-weight compound (e.g., polymer resin, crosslinking agent, or crosslinking catalyst) during baking upon formation of a resist underlayer film from a resist underlayer film-forming composition. The resist underlayer film-forming composition of the present invention uses an organic acid having a fluoroalkyl group or an organic acid salt having a fluoroalkyl group, as a crosslinking catalyst, and thus the resist underlayer film-forming composition containing the crosslinking catalyst can effectively prevent generation of a sublimate derived from a low-molecular-weight component contained in the resist underlayer film during formation of the film.

Abstract: Proposed is an elevator control device in which an unbalance torque estimation unit configured to estimate an unbalance torque in a motor is implemented in accordance with such a new finding that the unbalance torque can be estimated based on a first time period from an output change of a brake state command signal for switching an operation state of a brake from a braking state to a releasing state to a time when the motor starts a rotating operation along with release of the brake, and on a positive or negative sign of a velocity signal obtained when the motor starts rotation. As a result, as compared to the related art, a smaller calculation load can be achieved. Further, the elevator control device can have a sufficient responsiveness for suppressing an influence of the unbalance torque.

Abstract: A method for manufacturing a semiconductor device including a first substrate, on which a plurality of parts is arranged, and a plurality of chips disposed on the first substrate to correspond to the respective parts. The method includes preparing a member including the first substrate and the plurality of chips disposed on the substrate, forming a first film having a flat top surface by applying a precursor onto the member so that an amount of precursor applied onto the chips is less than an amount of precursor applied onto another portion, and dicing the member, wherein the forming the first film includes bringing a superstrate into contact with the precursor.

Abstract: An object of the present invention is to provide a highly sensitive method for detecting a biomarker.

Abstract: A manufacturing method for a semiconductor device includes forming a depression in an interlayer dielectric film placed on a semiconductor substrate, forming a planarized film made of a first cured product of a first curable composition on the interlayer dielectric film so as to cover the depression, forming, on the planarized film, a pattern made of a second cured product of a second curable composition and having an opening on the depression, etching the planarized film by using the pattern so as to form a trench in the first cured product in the depression, forming a metal film on the interlayer dielectric film so as to fill the trench with a metal, and polishing the metal film by a CMP method so as to leave a metal pattern in the trench.

Abstract: A semiconductor device includes a first substrate and a second substrate. The first substrate includes a first semiconductor substrate, and a first wiring structure having an interlayer dielectric film containing a cured product of a curable composition, a trench provided in the cured product, and a first metal pattern filled in the trench. The second substrate includes a second semiconductor substrate, and a second wiring structure having a second metal pattern. The first metal pattern is joined to the second metal pattern.

Abstract: A ferrite sheet includes a substrate, a sintered ferrite plate provided on a surface of the substrate via an adhesive layer, and a protective layer provided on a surface of the sintered ferrite plate. The protective layer includes at least one groove that extends to at least the sintered ferrite plate and does not extend to a surface of the substrate that is not in contact with the adhesive layer.

Abstract: A device in which a plurality of pixels are arranged in a substrate is provided. Each of the plurality of pixels includes a portion, and an element configured to function as a light converging element and a color filter, the plurality of pixels include a first pixel and a second pixel arranged adjacent to each other, the element of the first pixel and the element of the second pixel transmit light components of different colors, respectively, and are in contact with each other, and a contact surface where the element of the first pixel and the element of the second pixel contact is tilted with respect to a normal direction of a surface of the substrate.

Abstract: A photoelectric conversion device including: a semiconductor layer having a first main surface and a second main surface and including a first photoelectric conversion element and a second photoelectric conversion element adjacent to each other; and an element isolation portion arranged to electrically isolate the first photoelectric conversion element and the second photoelectric conversion element, is provided. A cured product of a curable composition is arranged on the first main surface, a plurality of trenches extending from a surface of the cured product toward the first main surface are provided in the cured product, and the plurality of trenches include a first trench constituting a scattering diffraction structure arranged to overlap the first photoelectric conversion element, and a second trench constituting an isolation structure arranged to overlap the element isolation portion.

Abstract: A light emitting device includes a plurality of sub-pixels including first and second sub-pixels. The first sub-pixel includes a first reflecting member below a first lower electrode, and the second sub-pixel includes a second reflecting member below a second lower electrode. The device includes an insulating film arranged below the lower electrodes of the plurality of sub-pixels so as to cover the first reflecting member and the second reflecting member. The insulating film includes a first sub-wavelength structure arranged between the first reflecting member and the first lower electrode, and a second sub-wavelength structure arranged between the second reflecting member and the second lower electrode The first sub-wavelength structure and the second sub-wavelength structure have effective refractive indices different from each other.

Abstract: A method of processing a substrate having a first surface with an outer peripheral portion lower than a central portion and forming a second surface flatter than the first surface is provided. The method includes forming a planarization film on at least the outer peripheral portion by placing a curable composition on the substrate, bringing a superstrate into contact with the curable composition, and curing the curable composition, and executing CMP before or after the forming. The second surface is formed through the forming and the executing the CMP.