Abstract: An acoustic wave device includes a piezoelectric layer that is made of lithium niobate or lithium tantalate, and a plurality of pairs of electrodes opposed to each other in a direction intersecting with a thickness direction of the piezoelectric layer, in which a bulk wave in a thickness shear primary mode is used or d/p is about 0.5 or lower when a thickness of the piezoelectric layer is d and a distance between centers of mutually adjacent electrodes among the plurality of pairs of electrodes is p. The plurality of pairs of electrodes include at least one pair of first electrodes of a first acoustic wave resonator and at least one pair of second electrodes of a second acoustic wave resonator. A direction orthogonal to a longitudinal direction of the second electrodes in the second acoustic wave resonator is inclined at an angle that is greater than 0° and smaller than 360° with respect to a direction orthogonal to a longitudinal direction of the first electrodes in the first acoustic wave resonator.

Abstract: An acoustic resonator device is provided that includes a substrate; a piezoelectric layer at least partially supported by the substrate; an interdigital transducer (IDT) at the piezoelectric layer; an acoustic Bragg reflector between the substrate and the piezoelectric layer. The acoustic Bragg reflector includes alternating layers of a first material and a second material having a higher acoustic impedance than the first material. Thicknesses of the first material and the second material of the acoustic Bragg reflector are configured to generate a reflectance frequency band centered around a displaced frequency f0?, the displaced frequency f0? being displaced from a resonance frequency fr of the acoustic resonator device based on a harmonic spur of the resonance frequency fr. In this aspect, the thicknesses of the first material and the second material are measured in a direction normal to the substrate.

Abstract: An acoustic wave device further includes a piezoelectric layer and first and second electrodes, first and second divided resonators, and a support substrate. The support substrate includes first and second energy confinement layers. The first energy confinement layer overlaps at least a portion of a first region of the piezoelectric layer. The second energy confinement layer overlaps at least a portion of a second region of the piezoelectric layer. The support substrate includes a wall portion between the first and second energy confinement layers.

Abstract: A conductive composition for electrode formation contains an organometallic compound containing a metal element, and an organic solvent. The conductive composition is substantially free of metal particles.

Abstract: An acoustic resonator is provided that included a substrate; a piezoelectric layer supported by the substrate; and an interdigital transducer (IDT) on a surface of the piezoelectric layer that faces the substrate, with the IDT including a plurality of interleaved fingers. Moreover, the acoustic resonator includes an acoustic reflector, such as a Bragg reflector, disposed between the substrate and the piezoelectric layer. The acoustic reflector includes acoustic impedance layers with one or more layers having a shape that conforms to the interleaved fingers disposed on the surface of the piezoelectric layer.

Abstract: A semiconductor device is provided. The device includes a first wiring layer including a first wiring pattern, a second wiring layer arranged between the first wiring layer and a surface of a substrate and including a second wiring pattern and a third wiring pattern, a first plug connecting the first wiring pattern and the second wiring pattern, a capacitive element including a first electrode arranged between the first wiring layer and the second wiring layer and a second electrode arranged at a position farther apart from the substrate than the first electrode, and a second plug connecting the first electrode and the third wiring pattern. An angle between a side surface of the second plug and an upper surface of the third wiring pattern is not more than 75°.

Abstract: An acoustic wave device includes a support substrate, a piezoelectric layer, and an IDT electrode. The piezoelectric layer is over the support substrate. The IDT electrode is on the piezoelectric layer, and includes a plurality of electrode fingers. An intersecting width of the plurality of electrode fingers is equal to or smaller than about 5?.

Abstract: An acoustic wave device includes a piezoelectric layer and first and second electrodes. The first and second electrodes face each other in a direction crossing a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave of a thickness-shear primary mode. The material of the piezoelectric layer is lithium niobate or lithium tantalate. The first and second electrodes include aluminum layers, respectively, on the piezoelectric layer. An orientation direction of a crystal of each of the aluminum layers is a direction orthogonal or substantially orthogonal to a second principal surface on the piezoelectric layer side of each of the aluminum layers.

Abstract: A resist underlayer film-forming composition improves an ability to fill patterns during baking by improving heat-reflowability of a polymer; a resist underlayer film being a baked product of a coating film formed from the resist underlayer film-forming composition; and a method for producing a semiconductor device includes a step of forming the resist underlayer film. The resist underlayer film-forming composition includes a compound of the following formula (A) or (B) and a solvent.

Abstract: An acoustic wave device includes a piezoelectric layer, and an IDT electrode including first and second electrodes each including electrode fingers extending in a second direction intersecting a first direction and facing each other. The IDT electrode includes first, second, and third groups of electrode fingers continuously arranged in a third direction. The first group of electrode fingers has a largest first width, the second group of electrode fingers has a smallest second width, and the third group of electrode fingers has a third width that is larger than the second width. The third group of electrode fingers, the second group of electrode fingers, the first group of electrode fingers, the second group of electrode fingers, and the third group of electrode fingers are arranged in this order as viewed in the third direction.

Abstract: An acoustic wave device includes a piezoelectric layer, a first electrode, a second electrode, a first divided resonator, a second divided resonator, and a support substrate. The support substrate includes first and second energy confinement layers. The first energy confinement layer at least partially overlaps with a first region of the piezoelectric layer. The second energy confinement layer at least partially overlaps with a second region of the piezoelectric layer. The first and second energy confinement layers are integrally provided in the support substrate.

Abstract: A conductive paste for electrode formation contains metal particles, a binder, a metal oxide additive, and a solvent. The metal oxide additive includes a metal oxide having, in an Ellingham diagram, a higher level of standard Gibbs energy of formation than carbon dioxide or carbon monoxide at a temperature of 500 to 1000° C.

Abstract: An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, made of lithium niobate or lithium tantalate, and including a first main surface and a second main surface that oppose each other, and an interdigital transducer electrode on the first main surface of the piezoelectric layer. An acoustic reflection portion is at a position overlapping at least a portion of the IDT electrode in a plan view when viewed along a laminating direction of the support and the piezoelectric layer. The IDT electrode includes a first busbar and a second busbar that oppose each other, first electrode fingers each including one end connected to the first busbar, and second electrode fingers each including one end connected to the second busbar and being interdigitated with the plurality of first electrode fingers.

Abstract: A ferrite sheet includes a substrate, a sintered ferrite plate provided on a surface of the substrate via an adhesive layer, and a protective layer provided on a surface of the sintered ferrite plate. The protective layer includes at least one groove that extends to at least the sintered ferrite plate and does not extend to a surface of the substrate that is not in contact with the adhesive layer.

Abstract: A collation device includes a light source unit; a camera unit that receives light emitted from the light source unit and reflected in a collation area of an object to acquire a photographed image of the collation area; and a processor configured to, by executing a program: detect a positional relationship between the light source unit and the camera unit by using the photographed image, and notify of a collation result between the photographed image and a registered image prepared in advance by using the positional relationship.

Abstract: A production efficiency improvement support system calculates an operational availability and a cycle time, based on results of detection of an operating status of production equipment, and displays a chart. An axis of the cycle time is set to be shorter rightward. The results of detection are displayed in such a mode that variations are recognizable, like points pp1 and points pp2. The points pp1 and the points pp2 have different countermeasures applied for improvement of the production efficiency and are accordingly displayed in different display modes. A point p1 and a point p2 indicating values of an actual cycle time and an actual operational availability are also displayed as representative values of the results of detection. Displaying these indexes in the form of a chart facilitates visual recognition of how to improve the operational availability and the cycle time and effectively supports improvement of the production efficiency.

Abstract: An acoustic wave device includes a support, a piezoelectric layer, and an IDT electrode. The IDT electrode includes first and second electrode fingers and first and second busbar electrodes. The first electrode finger extends in a second direction intersecting with a first direction. The second electrode finger extends in the second direction and faces a corresponding one of the first electrode finger in a third direction perpendicular to the second direction. A space in the support at least partially matches the IDT electrode from above in the first direction. The first or second electrode finger includes an underlying metal layer contacting the piezoelectric layer and a first metal layer on the underlying metal layer. The piezoelectric layer includes a diffusion layer where the piezoelectric layer contacts the underlying metal layer. The underlying metal layer and the diffusion layer include at least one of Ni, Cr, and Ti.

Abstract: An acoustic wave device includes a support substrate with a thickness in a first direction, an intermediate layer on the support substrate, a piezoelectric layer on the intermediate layer, and an interdigital transducer electrode including a first electrode finger on a surface of the piezoelectric layer and extending in a second direction intersecting the first direction, a first busbar electrode connected to the first electrode finger, a second electrode finger opposed to the first electrode finger in a third direction orthogonal or substantially orthogonal to the second direction and extending in the second direction, and a second busbar electrode connected to the second electrode finger. The intermediate layer includes a space in a region in which at least a portion of the intermediate layer overlaps the interdigital transducer electrode in a plan view in the first direction, and an inner wall of the space includes at least one notch.

Abstract: An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support substrate, a space overlapping at least a portion of the piezoelectric layer, and a functional electrode on the piezoelectric layer. The support includes a space at a position at least partially overlapping the functional electrode in plan view. The functional electrode includes a first metal layer and a second metal layer on at least a portion of the first metal layer. A linear expansion coefficient of the second metal layer is smaller than a linear expansion coefficient of the first metal layer.

Abstract: An acoustic wave device includes a support substrate with a thickness in a first direction, an intermediate layer on the support substrate, a piezoelectric layer on the intermediate layer, and an IDT electrode including a first electrode finger at the piezoelectric layer in the first direction and extending in a second direction intersecting the first direction, a first busbar electrode connected to the first electrode finger, a second electrode finger facing the first electrode finger in a third direction orthogonal or substantially orthogonal to the second direction and extending in the second direction, and a second busbar electrode connected to the second electrode finger. The intermediate layer includes a void portion at least partially overlapping the IDT electrode in plan view, and a surface roughness of an inner sidewall of the intermediate layer is about 0.0055 ?m or more.