Abstract: A splitter simultaneously inputs two signals having different frequencies within a transmission band to a transmission terminal. A transmission filter system and a reception filter system that are connected to an antenna terminal share a first hybrid coupler. Two transmission filters and a second hybrid coupler are located between the first hybrid coupler and the transmission terminal. A reception filter is located between the first hybrid coupler and the reception terminal.

Abstract: An acoustic wave element 1 according to the present disclosure includes a piezoelectric substrate 2 and an IDT electrode 3 on the piezoelectric substrate 2. The IDT electrode 3 includes a multilayer structure of a first layer 35 comprised of Al containing 10% or less of a sub-component and a second layer 37 comprised of a CuAl2 alloy. The second layer 37 enables the acoustic wave element 1 to have excellent electric power resistance.

Abstract: An elastic wave resonator includes a piezoelectric body, an IDT electrode positioned on the piezoelectric body, and a pair of reflectors. The IDT electrode includes a plurality of first electrode fingers arranged at a first pitch in a propagation direction of an elastic wave, and at least one second electrode finger formed at each end in the propagation direction of the plurality of first electrode fingers. The reflector is positioned at each end in the propagation direction of the IDT electrode and includes a plurality of strip electrodes arranged, in the propagation direction, at a second pitch wider than the first pitch or having a duty ratio higher than a duty ratio of any of the plurality of first electrode fingers and the at least one second electrode finger.

Abstract: An acoustic wave element includes an IDT electrode including electrode fingers, a first substrate on an upper surface of which the IDT electrode is located, which has a thickness of less than 2 times a repetition interval of the electrode fingers and is configured by a piezoelectric crystal, a second substrate bonded to a lower surface of the first substrate, and configured by an Si single crystal having a plane orientation of a (100) plane or (110) plane or a plane equal to them, in which substrate a crystal axis of the Si single crystal parallel to a substrate surface of Si single crystal is inclined at any angle of 25° to 65°, 115° to 155°, 205° to 245°, and 295° to 345° relative to a direction of propagation of an acoustic wave when viewed from the upper surface of the superposed first substrate.

Abstract: The strength of a spurious signal is reduced while maintaining the uniformity of a resonant frequency in an identical elastic wave resonator. An elastic wave resonator (4) includes a piezoelectric body (6), and a plurality of electrode fingers (14, 22) located on the piezoelectric body and arranged in a propagation direction (TD) of an elastic wave. A region in which the plurality of electrode fingers are located includes a first region (24A) and a second region (24B) in a plan view. The plurality of electrode fingers include a first electrode finger group (14A) located in the first region and a second electrode finger group (14B) located in the second region, and a pitch (PA) of the first electrode finger group is different from a pitch (PB) of the second electrode finger group.

Abstract: An acoustic wave element 1 according to the present disclosure includes a piezoelectric substrate 2 and an IDT electrode 3 on the piezoelectric substrate 2. The IDT electrode 3 includes a multilayer structure of a first layer 35 comprised of Al containing 10% or less of a sub-component and a second layer 37 comprised of a CuAl2 alloy. The second layer 37 enables the acoustic wave element 1 to have excellent electric power resistance.

Abstract: An acoustic wave element includes an IDT electrode including a plurality of electrode fingers and exciting a surface acoustic wave, a first substrate including an upper surface on which the IDT electrode is located, the first substrate being configured by a piezoelectric crystal, and a second substrate bonded to a side where a lower surface of the first substrate is located. Either of a first region which continues from the lower surface of the first substrate toward a side where the upper surface is located or a second region which continues from the lower surface of the first substrate toward a side where the second substrate is located is a low resistance region having a resistance value of 5×103? to 5×107?.

Abstract: An acoustic wave device includes a substrate, a multilayer film on the substrate, an LT layer configured by a single crystal of LiTaO3 on the multilayer film, and an IDT electrode on the LT layer. The thickness of the LT layer is 0.3? or less where ? is two times a pitch p of electrode fingers in the IDT electrode. Euler angles of the LT layer are (0°±20°, ?5° to 65°, 0°±10°), (?120°±20°, ?5° to 65°, 0°±10°), or (120°±20°, ?5° to 65°, 0°±10°). The multilayer film configured by alternately stacking at least one first layer and at least one second layer. The first layer is comprised of SiO2. The second layer is comprised of any one of Ta2O5, HfO2, ZrO2, TiO2, and MgO.

Abstract: An acoustic wave device includes a substrate, a multilayer film on the substrate, an LT layer which is located on the multilayer film and is configured by a single crystal of LiTaO3, and an IDT electrode on the LT layer. In the multilayer film, a differential value obtained by subtracting a total value of values each obtained by multiplying a density and thickness of a film having a slower acoustic velocity than a transverse wave acoustic velocity of the LT layer from a total value of values each obtained by multiplying a density and thickness of a film having a faster acoustic velocity than the transverse wave acoustic velocity of the LT layer is negative, and a thickness of the LT layer is less than p and a thickness of the multilayer film is less than p where a pitch of electrode fingers in the IDT electrode is “p”.

Abstract: An acoustic wave device includes a substrate 3, a multilayer film 5 on the substrate 3, an LT layer 7 which is located on the multilayer film and is configured by a single crystal of LiTaO3, and an IDT electrode 19 on the LT layer 7. In the multilayer film 7, a differential value D obtained by subtracting a total value of values each obtained by multiplying a density and thickness of a film having a slower acoustic velocity than a transverse wave acoustic velocity of the LT layer 7 from a total value of values each obtained by multiplying a density and thickness of a film having a faster acoustic velocity than the transverse wave acoustic velocity of the LT layer 7 is negative, and a thickness of the LT layer 7 is less than 2p where a pitch of electrode fingers in the IDT electrode 19 is “p”.

Abstract: A composite substrate 10 includes a first substrate 10 comprised of a piezoelectric single crystal and a second substrate 20 comprised of a silicon single crystal bonded to the first substrate 10. In the second substrate, a planar orientation is (111), and ? of Euler angles (?, ?, ?) is offset from 0°. Due to this, a bulk wave spurious is reduced in a specific frequency band.

Abstract: In a SAW element, a piezoelectric layer is laid over a support substrate. An IDT electrode includes a main region and two end regions on two sides of the main region. The end region continues from a portion where electrode finger design is modified up to the end part. A resonance frequency determined by electrode finger design of reflector electrode fingers is lower than a resonance frequency determined by electrode finger design of electrode fingers in the main region. An interval between centers of the electrode fingers in the main region is defined as “a”. Number of electrode fingers configuring the end region is defined as “m”. A distance between a center of an electrode finger among the electrode fingers in the main region which is located on a side closest to the end region and a center of a reflector electrode finger among the reflector electrode fingers which is located on a side closest to the end region is defined as “x”. At this time, the following relationship is satisfied: 0.

Abstract: An acoustic wave element includes an IDT electrode includes pluralities of electrode fingers, and reflector electrodes on the two sides of the IDT electrode. The IDT electrode includes a major part and at least one end part which is located between the major part and one of the reflector electrodes and is arranged along a direction of propagation of an acoustic wave together with the major part. the at least one end part includes a pitch of the plurality of electrode fingers substantially the same as a pitch of the plurality of electrode fingers in the major part, is electrically connected in parallel with respect to the major part, and is divided into two or more sections which are electrically connected in series with each other.

Abstract: An acoustic wave device includes a substrate 3, a multilayer film 5 on the substrate 3, an LT layer 7 which is located on the multilayer film and is configured by a single crystal of LiTaO3, and an IDT electrode 19 on the LT layer 7. In the multilayer film 7, a differential value D obtained by subtracting a total value of values each obtained by multiplying a density and thickness of a film having a slower acoustic velocity than a transverse wave acoustic velocity of the LT layer 7 from a total value of values each obtained by multiplying a density and thickness of a film having a faster acoustic velocity than the transverse wave acoustic velocity of the LT layer 7 is negative, and a thickness of the LT layer 7 is less than 2 p where a pitch of electrode fingers in the IDT electrode 19 is “p”.

Abstract: An acoustic wave device includes a substrate, a multilayer film on the substrate, an LT layer configured by a single crystal of LiTaO3 on the multilayer film, and an IDT electrode on the LT layer. The thickness of the LT layer is 0.3? or less where ? is two times a pitch p of electrode fingers in the IDT electrode. Euler angles of the LT layer are (0°±20°, ?5° to 65°, 0°±10°), (?120°±20°, ?5° to 65°, 0°±10°), or (120°±20°, ?5° to 65°, 0°±10°). The multilayer film is configured by alternately stacking at least one first layer and at least one second layer. The first layer is comprised of SiO2. The second layer is comprised of any one of Ta2O5, HfO2, ZrO2, TiO2, and MgO.

Abstract: An acoustic wave element includes an IDT electrode which includes a plurality of electrode fingers and excites a surface acoustic wave, a first substrate on an upper surface of which the IDT electrode is located, has a thickness less than 2 times “p” of a repetition interval of the plurality of electrode fingers, and is made of a piezoelectric crystal, an intermediate layer which includes a first surface and a second surface, has the first surface joined to a lower surface of the first substrate, and is made of a material having a slower transverse wave acoustic velocity than the first substrate, and a second substrate made of sapphire which is joined to the second surface.

Abstract: In an IDT electrode of an acoustic wave element which includes first electrode fingers and second electrode fingers connected to potentials which are different from each other and arranged spaced apart from each other, the first electrode fingers includes first tip parts, and either of the first electrode fingers and the second electrode fingers includes, at a tip area extending along a direction of propagation of an acoustic wave and overlapping with the first tip parts, increase sections in which electrode volumes per unit lengths in a direction of extension of the first electrode fingers and the second electrode fingers are larger in comparison with that of the center area in which the electrode fingers intersect.

Abstract: An acoustic wave element includes an IDT electrode includes pluralities of electrode fingers, and reflector electrodes on the two sides of the IDT electrode. The IDT electrode includes a major part and at least one end part which is located between the major part and one of the reflector electrodes and is arranged along a direction of propagation of an acoustic wave together with the major part. the at least one end part includes a pitch of the plurality of electrode fingers substantially the same as a pitch of the plurality of electrode fingers in the major part, is electrically connected in parallel with respect to the major part, and is divided into two or more sections which are electrically connected in series with each other.

Abstract: A composite substrate 10 includes a first substrate 10 comprised of a piezoelectric single crystal and a second substrate 20 comprised of a silicon single crystal bonded to the first substrate 10. In the second substrate, a planar orientation is (111), and ? of Euler angles (?, ?, ?) is offset from 0°. Due to this, a bulk wave spurious is reduced in a specific frequency band.

Abstract: A composite substrate includes a first substrate which is comprised of a lithium tantalate crystal and has Euler angles (0, ?, ?), and a second substrate which is comprised of a single crystal of silicon bonded to the first substrate and has Euler angles (?45, ?54.7, ?). In the composite substrate, ? is ?40° to ?60° or 120° to 140° and ? is 0° or 180°, and either of following conditions is satisfied. (1) ? is in a range of ?=?±20° and its equivalent orientation and (2) ? is in a range of ?+160°????+200°.