Abstract: In a brake system for a vehicle, a first control mode and a second control mode are provided by which it is possible to cope with variations in the running environments such as changes between traveling on a public road and traveling on a circuit racecourse and variations in road conditions such as changes between a dry road surface and a wet road surface. A mode change-over switch is disposed between a kill switch on the upper side and a starter switch on the lower side, on the vehicle body center side relative to a right grip. Switching between the first control mode and the second control mode is carried out by use of the mode change-over switch.

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.

Abstract: During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.

Abstract: An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction.

Abstract: An ion implantation method in which an ion beam is scanned in a beam scanning direction and a wafer is mechanically scanned in a direction perpendicular to the beam scanning direction, includes setting a wafer rotation angle with respect to the ion beam so as to be varied, wherein a set angle of the wafer rotation angle is changed in a stepwise manner so as to implant ions into the wafer at each set angle, and wherein a wafer scanning region length is set to be varied, and, at the same time, a beam scanning speed of the ion beam is changed, in ion implantation at each set angle in a plurality of ion implantation operations during one rotation of the wafer, such that the ions are implanted into the wafer and dose amount non-uniformity in a wafer surface in other semiconductor manufacturing processes is corrected.

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.

Abstract: In a brake system for a vehicle, a first control mode and a second control mode are provided by which it is possible to cope with variations in the running environments such as changes between traveling on a public road and traveling on a circuit racecourse and variations in road conditions such as changes between a dry road surface and a wet road surface. A mode change-over switch is disposed between a kill switch on the upper side and a starter switch on the lower side, on the vehicle body center side relative to a right grip. Switching between the first control mode and the second control mode is carried out by use of the mode change-over switch.

Abstract: An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction.

Abstract: A marking device includes a two-dimensional code forming unit converting first identification information into two-dimensional code information in accordance with a predetermined standard and forming a two-dimensional code on an object based on the two-dimensional code information, a two-dimensional code reading unit reading the two-dimensional code and generating second identification information in accordance with the standard, and a determination unit determining whether or not the first identification information matches the second identification information.

Abstract: In an irradiation system with an ion beam/charged particle beam having an energy filter, the energy filter is formed by deflection electrodes and a deflection magnet which can be switchingly used. The deflection magnet has a general window-frame shape and is formed with a hollow portion at its center. The deflection electrodes are installed, along with suppression electrodes, in a vacuum chamber arranged in the hollow portion of the deflection magnet. The deflection electrodes are installed with respect to the deflection magnet such that a deflection trajectory of a beam caused by a magnetic field and a deflection trajectory of a beam caused by an electric field overlap each other. Since the deflection electrodes and the deflection magnet can be switchingly used, the system can deal with a wider range of beam conditions and thus is widely usable.

Abstract: In an air intake assembly, a portion of an inner peripheral wall of an intake funnel pipe is provided as a pivotally movable blocking body, so that when unthrottled, an inner wall surface of the blocking body is flush with the inner peripheral wall of the funnel pipe. The blocking body has a substantially trianglular outline shape, the apex of which is positioned on top when viewed along the axis of the support shaft. The support shaft is positioned at the apex of the blocking body, and allows pivotal movement of the blocking body, on the downstream side thereof, to allow adjustment of the rate of air flow through the funnel pipe. The blocking body within the funnel pipe of an air intake assembly allows a smooth flow of air therepast when actuated to throttle the air intake channel, and does not obstruct the air intake channel when inactive.

Abstract: In an irradiation system with an ion beam/charged particle beam having an energy filter, the energy filter is formed by deflection electrodes and a deflection magnet which can be switchingly used. The deflection magnet has a general window-frame shape and is formed with a hollow portion at its center. The deflection electrodes are installed, along with suppression electrodes, in a vacuum chamber arranged in the hollow portion of the deflection magnet. The deflection electrodes are installed with respect to the deflection magnet such that a deflection trajectory of a beam caused by a magnetic field and a deflection trajectory of a beam caused by an electric field overlap each other. Since the deflection electrodes and the deflection magnet can be switchingly used, the system can deal with a wider range of beam conditions and thus is widely usable.

Abstract: In an air intake assembly, a portion of an inner peripheral wall of an intake funnel pipe is provided as a pivotally movable blocking body, so that when unthrottled, an inner wall surface of the blocking body is flush with the inner peripheral wall of the funnel pipe. The blocking body has a substantially trianglular outline shape, the apex of which is positioned on top when viewed along the axis of the support shaft. The support shaft is positioned at the apex of the blocking body, and allows pivotal movement of the blocking body, on the downstream side thereof, to allow adjustment of the rate of air flow through the funnel pipe. The blocking body within the funnel pipe of an air intake assembly allows a smooth flow of air therepast when actuated to throttle the air intake channel, and does not obstruct the air intake channel when inactive.

Abstract: A lamp fitting structure having a small depth dimension can include a socket for fixing a wedge-base lamp. The socket can include an insertion portion for receiving and fitting a fixed portion of the lamp therein, a peripheral portion and a rear end portion on the back face, all integrally formed. An opening can be provided which penetrates through from the insertion portion to the rear end portion. The socket does not require an electrical feed terminal for electrical connection, and only performs fixation of the inserted lamp A connector can be fitted into the opening in the rear end portion, for electrically connecting the feed terminal disposed in the connector to a lead wire of the wedge-base lamp. By inserting and fitting the connector into the socket from the rear end portion thereof the fixation between the wedge-base lamp and the socket can be made more secure.

Abstract: A lamp fitting structure having a small depth dimension can include a socket for fixing a wedge-base lamp. The socket call include an insertion portion for receiving and fitting a fixed portion of the lamp therein, a peripheral portion and a rear end portion on the back face, all integrally formed. An opening can be provided which penetrates through from the insertion portion to the rear end portion. The socket does not require an electrical feed terminal for electrical connection, and only performs fixation of the inserted lamp. A connector can be fitted into the opening in the rear end portion, for electrically connecting the feed terminal disposed in the connector to a lead wire of the wedge-base lamp. By inserting and fitting the connector into the socket from the rear end portion thereof, the fixation between the wedge-base lamp and the socket can be made more secure. As a result, the depth dimension can be reduced, and a fitting structure that is easily operated can be provided.

Abstract: A motorcycle rear swing arm structure includes a chain case having partition members for obstructing the course of granular particles against the surface of the brake disc on the wheel carried by the swing arm. The chain case can also be provided with baffle members effective to collect droplets of oil sprayed from the drive chain sprocket and for conducting it for discharge away from the swing arm.

Abstract: An automobile lamp assembly of a fixed focus type wherein the assembly has a socket cap, a flange and a socket all integrally formed, and a lamp is fixedly mounted on the socket cap. The assembly has at least three relatively thin tongues formed on the socket cap, and corresponding rectangular holes formed in the flange. The rectangular holes have a size to allow a respective tongue to pass therethrough. After adjusting a focus of the lamp with the tongues inserted into the holes, the tongues are spot welded to the main body of the socket.