Abstract: A magneto-resistive device is improved in characteristics by removing a surface oxide film to reduce the resistance and reducing an ion beam damage. The magneto-resistive device has a magneto-resistive layer which comprises a tunnel barrier layer, an underlying pinned layer, and an overlying free layer. A non-magnetic layer is formed on the free layer for protection. A composite-layer film comprised of an insulating layer and a damage reducing layer is formed in contact with an effective region which is effectively involved in detection of magnetism in the magneto-resistive layer without overlapping with the effective region. The damage reducing layer is made of a material which includes at least one element, the atomic weight of which is larger than that of silicon. The insulating layer and damage reducing layer do not constitute a magnetic domain control layer for applying a biasing magnetic field to the free layer.

Abstract: A manufacturing method of a thin-film magnetic head provided with an MR element includes a step of forming an MR multi-layered structure in which a current flows in a direction perpendicular to surfaces of layers of the MR multi-layered structure, on a lower electrode film, a step of depositing an insulation film on the formed MR multi-layered structure and the lower electrode film, a step of flattening the deposited insulation film until at least upper surface of the MR multi-layered structure is exposed, and a step of forming an upper electrode film on the flattened insulation film and the MR multi-layered structure.

Abstract: A manufacturing method of a thin-film magnetic head provided with an MR element includes a step of forming an MR multi-layered structure in which a current flows in a direction perpendicular to surfaces of layers of the MR multi-layered structure, on a lower electrode film, a step of depositing an insulation film on the formed MR multi-layered structure and the lower electrode film, a step of flattening the deposited insulation film until at least upper surface of the MR multi-layered structure is exposed, and a step of forming an upper electrode film on the flattened insulation film and the MR multi-layered structure.

Abstract: According to the present invention, a reproducing head having an MR film is formed on a substrate (step S102) and a recording head is formed (step S103). The MR film is formed by sequentially forming an antiferromagnetic layer, a first ferromagnetic layer, a tunnel barrier layer, and a second ferromagnetic layer. Subsequently, the end face perpendicular to an extending surface of the MR film is subjected to mechanical polishing to adjust the element height (step S105). The mechanically polished face is subjected to wet etching to remove residues of the mechanical polishing (step S106). Consequently, an electric short circuit in a tunnel barrier layer caused by residues at the time of polishing can be prevented, damage to the tunnel barrier layer and the recording head caused by the etching can be reduced, and a step in the substrate, the reproducing head, and the recording head can be made smaller as compared with the case of dry etching.

Abstract: A top pole layer has a first portion and a second portion. The first portion has an end located in an air bearing surface, has a constant width equal to a write track width, and includes a pole portion. The second portion is coupled to the other end of the first portion and includes a yoke portion. The first portion, a write gap layer, and a part of the bottom pole layer closer to the write gap layer have an equal width in a region where the first portion of the top pole layer and the bottom pole layer are opposed to each other via the write gap layer. The thickness of the first portion of the top pole layer in a region extending from the air bearing surface to a predetermined position is smaller than the thickness of the other part of the top pole layer adjacent to this region.