Abstract: In a planetary gear device including: a sun gear; a plurality of planet gears; a ring gear; and a tubular support member connected to the ring gear so as to rotate together with the ring gear; an outward flange provided at the ring gear and projecting radially outward and extend over an entire periphery thereof; an wavy inward flange provided at the tubular support member and having a plurality of projection pieces projecting radially inward over an entire periphery thereof, the outward flange and the inward flange are fastened to each other by means of bolts and nuts, and the inward flange has a plurality of recesses formed between the plurality of projection pieces and the plurality of recesses include shallow first recesses and second recesses deeper than the first recesses such that depth of the recesses becomes greater at regular intervals.

Abstract: A power conversion apparatus includes a capacitor and a heat dissipation member for cooling the capacitor. The capacitor and the heat dissipation member are pressed in an arranging direction in which the capacitor and the heat dissipation member are arranged. The capacitor includes a capacitor element which includes a dielectric body and a metal layer formed on a surface of the dielectric body, an electrode part connected to the metal layer and a bus bar connected to the electrode part. Part of the bus bar is interposed in the arranging direction between the heat dissipation member and the capacitor element.

Abstract: A power conversion apparatus includes a semiconductor module including a semiconductor device and a control circuit unit controlling the semiconductor module. The semiconductor module has main and subsidiary semiconductor devices connected in parallel. The control circuit unit performs control such that the subsidiary semiconductor device is turned on after the main semiconductor device is turned on, and the main semiconductor device is turned off after the subsidiary semiconductor device is turned off. The control circuit unit performs control such that, one of the turn-on and turn-off switching timings has a switching speed faster than that of the other of the switching timings. The semiconductor module is configured such that, at a high-speed switching timing, an induction current directed to turn off the subsidiary semiconductor device is generated in a control terminal of the subsidiary semiconductor device depending on temporal change of a main current flowing to the main semiconductor device.

Abstract: A semiconductor module includes an IGBT and a MOSFET. The IGBT is made of a silicon semiconductor. The MOSFET is made of a wide-bandgap semiconductor having a wider bandgap than the silicon semiconductor. The IGBT and the MOSFET are connected in parallel to each other to form a semiconductor element pair. The IGBT has a greater surface area than the MOSFET. The semiconductor module is configured to operate in a region that includes a low-current region and a high-current region. Electric current flowing through the semiconductor element pair is higher in the high-current region than in the low-current region. In the low-current region, the on-resistance of the MOSFET is lower than the on-resistance of the IGBT. In contrast, in the high-current region, the on-resistance of the IGBT is lower than the on-resistance of the MOSFET.

Abstract: In a driving apparatus for switches connected in parallel to each other, drivers respectively turn on or off the switches. A temperature obtainer obtains a value of a temperature parameter correlating with a temperature of at least one of the first and second switches. A selector selects at least one of the switches as at least one drive target switch. A driver causes at least one of the drivers to turn on the at least one drive target switch during an on duration and thereafter turn off the at least one drive target switch in each target switching cycle. The selector adjusts the number of the selected at least one drive target switch based on the value of the temperature parameter.

Abstract: A power conversion apparatus includes a first semiconductor element pair that includes a MOSFET made of wide bandgap semiconductor material and a wide bandgap diode made of wide bandgap semiconductor material which is reverse parallel-connected to the MOSFET, a second semiconductor element pair that includes an IGBT made of silicon semiconductor material and a silicon diode made of silicon semiconductor material which is reverse parallel-connected to the IGBT, and a control circuit section for controlling switching operation of the MOSFET and the IGBT. The first and second semiconductor element pairs are connected in series to each other.

Abstract: An electric power converter performing power conversion includes a plurality of semiconductor modules with built-in semiconductor elements, a plurality of cooling tubes stacked together with the plurality of semiconductor modules, and a pressure member made of metal. The pressure member has a pressing surface for pressing an outer cooling tube in order to press-contact the plurality of cooling tubes and the plurality of semiconductor modules in a stacking direction, and a heat receiving surface that receives heat generated from a capacitor that is an electronic component which is different from the plurality of semiconductor modules, by thermal conduction.

Abstract: A power conversion apparatus includes a semiconductor module including a semiconductor device and a control circuit unit controlling the semiconductor module. The semiconductor module has main and subsidiary semiconductor devices connected in parallel. The control circuit unit performs control such that the subsidiary semiconductor device is turned on after the main semiconductor device is turned on, and the main semiconductor device is turned off after the subsidiary semiconductor device is turned off. The control circuit unit performs control such that, one of the turn-on and turn-off switching timings has a switching speed faster than that of the other of the switching timings. The semiconductor module is configured such that, at a high-speed switching timing, an induction current directed to turn off the subsidiary semiconductor device is generated in a control terminal of the subsidiary semiconductor device depending on temporal change of a main current flowing to the main semiconductor device.

Abstract: In a driving apparatus for switches connected in parallel to each other, drivers respectively turn on or off the switches. A temperature obtainer obtains a value of a temperature parameter correlating with a temperature of at least one of the first and second switches. A selector selects at least one of the switches as at least one drive target switch. A driver causes at least one of the drivers to turn on the at least one drive target switch during an on duration and thereafter turn off the at least one drive target switch in each target switching cycle. The selector adjusts the number of the selected at least one drive target switch based on the value of the temperature parameter.

Abstract: In a planetary gear device including: a sun gear; a plurality of planet gears; a ring gear; and a tubular support member connected to the ring gear so as to rotate together with the ring gear; an outward flange provided at the ring gear and projecting radially outward and extend over an entire periphery thereof; an wavy inward flange provided at the tubular support member and having a plurality of projection pieces projecting radially inward over an entire periphery thereof, the outward flange and the inward flange are fastened to each other by means of bolts and nuts, and the inward flange has a plurality of recesses formed between the plurality of projection pieces and the plurality of recesses include shallow first recesses and second recesses deeper than the first recesses such that depth of the recesses becomes greater at regular intervals.

Abstract: The semiconductor device is provided with a plurality of switching elements connected in parallel to each other, and a plurality of recirculation element connected in parallel to the aforementioned plurality of switching elements. An emitter electrode serves as a reference potential of the aforementioned plurality of switching elements and an anode electrode serves as a reference potential of the aforementioned plurality of recirculation elements are electrically connected by the same plate-like member consisting of a conductive material. The aforementioned switching elements and the aforementioned recirculation elements which are connected in parallel on the lowest potential side are constituted so that the distance from the emitter terminal connected to the aforementioned emitter electrode to the aforementioned recirculation element becomes no greater than the distance from the aforementioned emitter terminal.

Abstract: A semiconductor module of an electric power converter includes an IGBT and a MOSFET which are connected in parallel to each other and provided on the same lead frame, either one of the IGBT and the MOSFET is a first switching element and the remaining one is a second switching element, and the conduction path of the second switching element is disposed at a position that is separated from a conduction path of the first switching element in the same lead frame.

Abstract: A power conversion apparatus includes a capacitor and a heat dissipation member for cooling the capacitor. The capacitor and the heat dissipation member are pressed in an arranging direction in which the capacitor and the heat dissipation member are arranged. The capacitor includes a capacitor element which includes a dielectric body and a metal layer formed on a surface of the dielectric body, an electrode part connected to the metal layer and a bus bar connected to the electrode part. Part of the bus bar is interposed in the arranging direction between the heat dissipation member and the capacitor element.

Abstract: A power conversion apparatus performs power conversion. The power conversion apparatus includes a semiconductor module and a cooler. The semiconductor module includes an insulated-gate bipolar transistor, a metal-oxide-semiconductor field-effect transistor, and a lead frame. The insulated-gate bipolar transistor and the metal-oxide-semiconductor field-effect transistor are connected in parallel to each other and provided on the same lead frame. The cooler has a coolant flow passage. The coolant flow passage extends such that the coolant flow passage and the lead frame of the semiconductor module are opposed to each other. The semiconductor module is configured such that the metal-oxide-semiconductor field-effect transistor is not disposed further downstream than the insulated-gate bipolar transistor in a flow direction of a coolant in the coolant flow passage of the cooler.

Abstract: A power conversion apparatus includes a semiconductor module including a semiconductor device and a control circuit unit controlling the semiconductor module. The semiconductor module has main and subsidiary semiconductor devices connected in parallel. The control circuit unit performs control such that the subsidiary semiconductor device is turned on after the main semiconductor device is turned on, and the main semiconductor device is turned off after the subsidiary semiconductor device is turned off. The control circuit unit performs control such that, one of the turn-on and turn-off switching timings has a switching speed faster than that of the other of the switching timings. The semiconductor module is configured such that, at a high-speed switching timing, an induction current directed to turn off the subsidiary semiconductor device is generated in a control terminal of the subsidiary semiconductor device depending on temporal change of a main current flowing to the main semiconductor device.

Abstract: A semiconductor module of an electric power converter includes an IGBT and a MOSFET which are connected in parallel to each other and provided on the same lead frame, either one of the IGBT and the MOSFET is a first switching element and the remaining one is a second switching element, and the conduction path of the second switching element is disposed at a position that is separated from a conduction path of the first switching element in the same lead frame.

Abstract: A semiconductor module includes an IGBT and a MOSFET. The IGBT is made of a silicon semiconductor. The MOSFET is made of a wide-bandgap semiconductor having a wider bandgap than the silicon semiconductor. The IGBT and the MOSFET are connected in parallel to each other to form a semiconductor element pair. The IGBT has a greater surface area than the MOSFET. The semiconductor module is configured to operate in a region that includes a low-current region and a high-current region. Electric current flowing through the semiconductor element pair is higher in the high-current region than in the low-current region. In the low-current region, the on-resistance of the MOSFET is lower than the on-resistance of the IGBT. In contrast, in the high-current region, the on-resistance of the IGBT is lower than the on-resistance of the MOSFET.

Abstract: A power conversion apparatus includes a first semiconductor element pair that includes a MOSFET made of wide bandgap semiconductor material and a wide bandgap diode made of wide bandgap semiconductor material which is reverse parallel-connected to the MOSFET, a second semiconductor element pair that includes an IGBT made of silicon semiconductor material and a silicon diode made of silicon semiconductor material which is reverse parallel-connected to the IGBT, and a control circuit section for controlling switching operation of the MOSFET and the IGBT. The first and second semiconductor element pairs are connected in series to each other.

Abstract: A power conversion apparatus includes a capacitor and a heat dissipation member for cooling the capacitor. The capacitor and the heat dissipation member are pressed in an arranging direction in which the capacitor and the heat dissipation member are arranged. The capacitor includes a capacitor element which includes a dielectric body and a metal layer formed on a surface of the dielectric body, an electrode part connected to the metal layer and a bus bar connected to the electrode part. Part of the bus bar is interposed in the arranging direction between the heat dissipation member and the capacitor element.

Abstract: An electric power converter includes a semiconductor module constituting a power conversion circuit, a capacitor electrically connected to the semiconductor module, and a cooling member for cooling the capacitor. The capacitor includes an element body provided with internal electrode, and a pair of end-face-electrodes provided on both end faces of the element body and connected to the internal electrode. The pair of end-face-electrodes are connected with a pair of bus bars, respectively, in a manner of surface contact. The capacitor is disposed in a state where one of the pair of end-face-electrodes is facing the cooling member. The end-face-electrode facing the cooling member is in contact with the cooling member via the bus bar.