Abstract: A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.

Abstract: A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.

Abstract: A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.

Abstract: A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.

Abstract: A low-defect-density crystalline structure comprising a first crystalline material, a layer of second crystalline material epitaxially grown on the first crystalline material, and a layer of third crystalline material epitaxially grown on the second layer such that the second layer is positioned between the first crystalline material and the third crystalline material. The second and third crystalline materials cooperate to form a desirable relationship. The crystalline structures of the second crystalline material and third crystalline material have a higher crystalline compatibility than the first crystalline material and third crystalline material. The layer of second crystalline material is sufficiently thick to form the desirable relationship with the third crystalline material but sufficiently thin for the layer of second crystalline material to be strained. The layer of third crystalline material is grown to a thickness beyond a thickness had the third layer been grown on an unstrained second layer.

Abstract: A low-defect-density crystalline structure comprising a first crystalline material, a layer of second crystalline material epitaxially grown on the first crystalline material, and a layer of third crystalline material epitaxially grown on the second layer such that the second layer is positioned between the first crystalline material and the third crystalline material. The second and third crystalline materials cooperate to form a desirable relationship. The crystalline structures of the second crystalline material and third crystalline material have a higher crystalline compatibility than the first crystalline material and third crystalline material. The layer of second crystalline material is sufficiently thick to form the desirable relationship with the third crystalline material but sufficiently thin for the layer of second crystalline material to be strained. The layer of third crystalline material is grown to a thickness beyond a thickness had the third layer been grown on an unstrained second layer.