Patents by Inventor Tetsuya Nishiara

Tetsuya Nishiara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma etching method
    Patent number: 6488863
    Abstract: An etching gas is supplied into a process chamber and turned into plasma so as to etch a silicon nitride film arranged on a field silicon oxide film on a wafer (w). A mixture gas containing at least CH2F2 gas and O2 gas is used as the etching gas. Parameters for planar uniformity, by which the etching apparatus is set in light of a set value of the planar uniformity, include the process pressure and the mixture ratio (CH2F2/O2) of the mixture gas. As the set value of the planar uniformity is more strict, either one of the process pressure and the mixture ratio is set higher.
    Type: Grant
    Filed: October 5, 2001
    Date of Patent: December 3, 2002
    Assignee: Tokyo Electron Limited
    Inventors: Koichi Yatsuda, Tetsuya Nishiara, Kouichiro Inazawa, Shin Okamoto
  • Plasma etching method
    Publication number: 20020084254
    Abstract: An etching gas is supplied into a process chamber and turned into plasma so as to etch a silicon nitride film arranged on a field silicon oxide film on a wafer (w). A mixture gas containing at least CH2F2 gas and O2 gas is used as the etching gas. Parameters for planar uniformity, by which the etching apparatus is set in light of a set value of the planar uniformity, include the process pressure and the mixture ratio (CH2F2/O2) of the mixture gas. As the set value of the planar uniformity is more strict, either one of the process pressure and the mixture ratio is set higher.
    Type: Application
    Filed: October 5, 2001
    Publication date: July 4, 2002
    Applicant: Tokyo Electron Limited
    Inventors: Koichi Yatsuda, Tetsuya Nishiara, Kouichiro Inazawa, Shin Okamoto